VP0109N3 Search Results

vp0109

Abstract: VP0109ND
Contextual Info: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 Die† -40V 8.0Ω -0.5A VP0104N3 — -60V 8.0Ω -0.5A VP0106N3 — -90V 8.0Ω -0.5A VP0109N3 VP0109ND

vp0109

Abstract: vp0104
Contextual Info: Supertex inc. VP0104/VP0106/VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) -40V 8.0Ω -0.5A VP0104N3 -60V 8.0Ω -0.5A VP0106N3 -90V 8.0Ω -0.5A VP0109N3 TO-92 Features

VP0104

Abstract: VP0104N3 VP0106 VP0106N3 VP0109 VP0109N3 VP0109ND
Contextual Info: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) -40V 8.0Ω -60V -90V Order Number / Package TO-92 Die† -0.5A VP0104N3 — 8.0Ω -0.5A VP0106N3 — 8.0Ω -0.5A VP0109N3 VP0109ND

Contextual Info: Supertex inc. VP0104_VP0106_VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) -40V 8.0? -0.5A VP0104N3 -60V 8.0? -0.5A VP0106N3 -90V 8.0? -0.5A VP0109N3 TO-92 Features

VP0106

Abstract: VP0109ND VP0104N3 VP0104 VP0106N3 VP0109 VP0109N3 VP0109N
Contextual Info: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 Die† -40V 8.0Ω -0.5A VP0104N3 — -60V 8.0Ω -0.5A VP0106N3 — -90V 8.0Ω -0.5A VP0109N3 VP0109ND

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

vp0104

Abstract: VP0109ND
Contextual Info: VP0104 VP0106 VP0109 Supertex:inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / R d S ON I d (ON) Order Num ber / Package b v dgs (max) (min) TO-92 Diet -40V 8.0Í2 -0.5A VP0104N3 — -60V 8.0Í2 -0.5A VP0106N3 — -90V 8.0Í2

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

VP0104

Abstract: VP0109 VP0109ND TELEDYNE VP0104N3 VP0104ND VP0106 VP0106N3 VP0106ND VP0109N3
Contextual Info: 2fi£ D T E LE DY NE COMPONENTS • S11?bQd GD0b4S2 - d l T-29-25 VP0104, VP0106 VP0109 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION TO-22CAA TO-92 Plastic Package VP0104N3 VP0104ND -40V, 8.0 ohm

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

SIVP

Contextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

vp0109

Abstract: VP0109ND
Contextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

sivp

Abstract: vp0109
Contextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP0106N5

Abstract: VP0104N5 VP0109N2 VP0109N5 VP0104N2 VP0106N2 VP0109N9 cmo60 VP0109ND vp0106N3
Contextual Info: _ =JJJi — _ — " ^ VP0104 VP0106 VPQ 1Q Q ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8Q -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5

VP0109ND

Contextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

SIVP

Abstract: marking n3 TRANSISTOR N3 VP0109 125OC VP0109N3-G VP0109ND
Contextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

VP0104N5

Abstract: VP0106N5 VP0109N2 VP0104N2 VP01A
Contextual Info: VP 01A Lj Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss ! BVdgs ^DSfON) max) *D(ON) (min) TO-39 TO-52 TO-92 TO-220 -40V 8ÌÌ -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5

VP0106A

Abstract: p0109
Contextual Info: VP0104 VP0106 VP0109 Supertex: inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ Order Number / Package ^DS O N ^D(ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad C-DIP* Die+ -40V 8.0£2 -0.5A — — VP0104N3 — VP0104N7 VP0104ND

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

Contextual Info: Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability