VNDQ09 Search Results

VNDQ09

Contextual Info: atS g& VN88AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY b A V (BR)DSS 4 80 Performance Curves: FRONT VIEW TO-220SD o 1.29 VNDQ09 1 SOURCE 2 GATE 3 & TAB - DRAIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYMBOL LIMITS

VN0808M

Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Contextual Info: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP

2N6661

Abstract: VNDQ09
Contextual Info: 2N6661 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V BR DSS 'W (V) 90 4 TO-39 (TO-205AD) BOTTOM VIEW •d (A) 0.9 Performance Curves: VNDQ09 1 SOURCE 2 GATE 3 & CASE-DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERSfTEST CONDITIONS

VQ1006

Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

0808L

Abstract: s4 vishay VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

VN0808L

Abstract: VN0808LS VQ1006P
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

TO-205AD

Abstract: 2N6661 VN88AFD
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D

marking code vishay SILICONIX to-39

Abstract: jantx2n6661
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V (B R )D SS M i n 0 0 2N6661 90 4 @ V GS= 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 1 0 V 0.8 to 2.5 1.29 ro s ( o n ) Max (fì) V G S (th ) b (A) (V) FEATURES

JANTX2N6661

Abstract: JAN2N6661 JANTXV2N6661 JANTX2N6661 reliability VNDQ09
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

VN88

Abstract: TO220SD TO-220SD VN88AD VN88A VN88AFD VN88AF
Contextual Info: SILICONIX INC «□r Siliconix JLM 1ÖE D • Ö254735 G014G70 T VN88 SERIES in c o rp o ra te d N-Channel Enhancement-Mode MOS Transistors " T 3 »1-07 PRODUCT SUMMARY PART V BR DSS rDS{ON) NUMBER (V) (n > TO-220/TO-220SD Id (A) PACKAGE VN88AD 80 4 1.49 TO-220

TO-205AD

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

VN0808M

Abstract: VQ1006P VN0808L
Contextual Info: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)

VN88AFD

Abstract: N-CHANNEL MOSFET 2N6661
Contextual Info: 2N6661/VN88AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications

VN46AFD

Abstract: VNDQ1 vnd02 TD1001 VN46AF
Contextual Info: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)

Contextual Info: Tem ic VN0808L/M, VQ1006P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber V BR DSS M in (V) VN0808L 80 VN0808M VQ1006P 90 r DS(on) M ax (Q) I d (A) v GS(lji) (Y) 4 @ V GS = 10V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

2N6661

Abstract: 2N6661 Siliconix VN88AFD marking code vishay SILICONIX to-39
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

VQ1006

Abstract: VN0808L VN0808LS VQ1006P
Contextual Info: _ VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) VN0808LS VQ1006P Id (A) i"DS(on) Max (Q) V GS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V

0808L

Abstract: 0808LS VN0808L equivalent VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

b0808

Abstract: VN0808L VN0808M VQ1006P
Contextual Info: VN0808L/M, VQ1006P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN0808L 80 VN0808M VQ1006P 90 rDS(on) Max (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS