MPF910
Abstract: MFE910 power semiconductor 1973
Contextual Info: I MFE910 MPF910 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR This TMOS FET is designed for high-voltage, high-speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor of UL-to-high voltage interface and high voltage
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mfe910mpf910o-205adpower semiconductor 1973 |
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MPF910
Contextual Info: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ing applications su c h as line drivers, relay drivers, C M O S logic,
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mfe910mpf910 |
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1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
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irfz20o-220irfz22irfz30+13irfz325to-220irl5101rfz44mfe92001rfz30irfz121rfz22vn10lpirfu9212irfu9220irfu9222irfu9022
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2N6788 motorola
Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles
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irff431irff432irff4332n6782+162n67842n67862n67882n67902n67922n67942n6788 motorolavmosvmos fetmfe910n-channel vmos motorolamfe9302n66592n6661irff110irff111
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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MPF910
Contextual Info: M AXIM UM RA TIN GS Rating Symbol Value Unit Drain-Source Voltage Vd s 60 Vdc Gate-Source Voltage Vg s -1 5 Vdc 'd 0.5 1.0 Ade Drain Current — Continuous l Pulsed{2) Id m Total Device Dissipation (a T^ = 25SC Derate above 25°C MPF910 PD 1.0 8.0 Watts mW/°C
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MPF910
Abstract: MFE910 7090J
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MPF910/D DATA MPF910 @~~~fn$witching — Enhancement 3 DRAIN I 2 GATE 9 l-SOURCE MMIMUM RATINGS I Rating Symbol 60 VGS *2O *4O VGSM Drain Current - Continuous l – Pulsed(2) Total Device Dissipation
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mpf910/dmpf910mpf91omfe910+3ow1-24471aog777090j
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode
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BC517 spice model
Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information
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vn2410lbc517 spice modelbc547 spice modelbc548 spice model+7h1 m6cmps6595bc557 spice modelbf245 a spicespice model bf199bc640 spice modeltransistor motorola selector guide plastic-encapsulated transistors greenlinetm portfolio devices s
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mfe9200
Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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VN5000TNE
Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
Contextual Info: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15
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s01124bovnos10l2n7000vn2222l+15so1117boso1117ns01137bovn2222lmvn130sn3vn5000tneirf0123vmp4motorola 20nirf0113mosfet vn66afvn0106n2mosfet 2sk* to-92mosfet 20n735m
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IRF8C30
Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
Contextual Info: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)
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irfaf50o-204aairfaf521rfag40+13rff230o-205afirff231t0-205afirff232irf8c30mfe92001rfbc40irfd110irfd123irfd9010irfd113irfag50
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IRF8C30
Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
Contextual Info: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ
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irfaf50o-204aairfaf521rfag40+12rfz42o-220abirfz44mfe910irf8c30mfe92001rfbc401rfz40irfd9010irfz30irfag50irfbc32
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MPF910
Abstract: MFE910
Contextual Info: MOTOROLA Order this document by MPF910/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current – Continuous 1
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2106a
Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108
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2n66612n70012n70022n7007+16bs107bs107abs108bs170bs250bsr642106abst72a cross0545n2vn1720mzvn2106azvn3306ampf910zetex zvp2120avp0545n22n7019
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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MPF910 equivalent
Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C
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mpf910mfe910226aemax218a+9msc1621t1msc2404msd1819amv1620mv1624mpf910 equivalentmodel for mpf910bc237transistor mpf910
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MPF910
Abstract: mfe910
Contextual Info: MPF910 MPF910 CASE 29-05, STYLE 22 TO-92 TO-226AE M A X IM U M RATIN G S Rating Symbol Value U nit VDS 60 Vdc Vg S VGSM ±20 ±40 Vdc Vpk 'D 'd m 0.5 1.0 Ade Total Device Dissipation (a T/^ = 25°C Derate above 25°C MPF910 pd 1.0 8.0 m wrc Total Device Dissipation (a Tç = 25°C
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mpf910o-226aemfe910mpf6669+130ical
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