VN2222LM Search Results

Contextual Info: VN2222 SERIES N-Channel Enhancement-Mode MOS Transistors ÄlüSSÖSS PRODUCT SUMMARY PART NUMBER V BR DSS VN2222LL 60 VN2222LM 60 (V) "W •d (A) PACKAGE 7.5 0.23 TO-92 7.5 0.26 TO-237 3 DRAIN TO-237 Performance Curves: BOTTOM VIEW VNDS06 1 SOURCE 2 GATE 3 & TAB-DRAIN

siliconix VN10KM

Abstract: VN10KM VN10LM VN2222KM BSR64 VN2222LM VN2222 BSR65 TO-237
Contextual Info: s VN2222LM • VN2222KM VN10KM - VN 10LM ■ VN2222KM ■ VN2222LM H Siliconix 60V MOSPOWER N-Channel Enhancement M ode These power FETs are designed especially for low power high frequency inverters, inter­ face to CMOS and TTL logic, and line drivers. FEATURES

VN2222

Abstract: 2N7000 VN2222LL VN2222LM
Contextual Info: VN2222 Series N-Channel Enhancement-Mode MOS Transistors CORPORATION VN2222 Series FEATURES ORDERING INFORMATION • Low rDS on <7.5Ω Part Package VN2222LL Plastic TO-92 VN2222LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS • Switching

TO-237

Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

VN5000TNE

Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
Contextual Info: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15

VN0605T

Abstract: VN0610LL VN10LE VN10LM VN2222LL VN2222LM
Contextual Info: VN10/0605/0610/2222 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM

mosfet vn10

Abstract: vn10 VN2222LM mosfet vn10lm
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

Contextual Info: JEFSSSÄS VNDS1 DIE N-Channel Enhancement-Mode MOS Transistor VNDS1CHP* 2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 x 4 (0. 104) 0.0049 (0. 124) Source Pad 0.0041 (0. 104) 0.0049 (0. 124) •Meets or exceeds specification for all part

25c016

Contextual Info: TELEDYNE COMPONENTS 3bE ]> • fl*J17bD2 ÜDD7Ô22 b « T S C '-A -TF1FD YN F T -3 S -2 $ COMPONENTS VN10LM VN2222LM N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ Drain-Source Voltage. +60V

mosfet vn10lm

Abstract: VN10 mosfet vn10 VN10LE VN0605T VN0610LL VN10LM VN2222LL VN2222LM S-52429-Rev
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

2222LM

Abstract: 0610LL vn10 N10LM
Contextual Info: T em ic VNlO/0605/0610/2222 Series S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber rDSion M a x Q ) VG S(th) (V ) I d M in (A ) VN 10LE 5 @ V Gs = 10 V

Contextual Info: VN2222 Series N-Channel Enhancement-Mode MOS Transistors _ CQIOOIC _ CORPORATION \J VN2222Series FEATURES ORDERING INFORMATION • Low rDS on < 7 .5 0 Part A D D I ir A T iO M C VN2222LL Plastic TO-92 VN2222LM Plastic TO-237 For sorted chips in carriers see 2N7000

Contextual Info: WTELEDYNE COMPONENTS VN10LM VN2222LM N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ Drain-Source Drain-Gate Voltage V gs = 0 . +60V

Contextual Info: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • 2N7000, VN0610LL, VN2222LL Single TO-237 • VN2222LM Single SOT-23 • VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad

pw 2222 a

Abstract: vn10 VN10L N0605 0610L Siliconix vn10
Contextual Info: Tem ic VN10/0605/0610/2222 Series_ S„|C0„|X N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P art Number V B R D SS Min (V) r D S(on) Max (Q) v G S (th ) ID Min (A) (V) VN10LE 5 @ V gs = 10V

vn10le

Abstract: VN10
Contextual Info: Temic Siliconix_VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number rDS on Max (Q) Id Min (A) VN10LE 5 @ VGS = 10 V VGS(th) (V) 0.8 to 2.5 VN10LM 5 @ VGS = 10 V

2N7000

Abstract: VN2222 VN2222LL VN2222LM VN-2222LL
Contextual Info: VN2222 Series N-Channel Enhancement-Mode MOS Transistors caloric CORPORATION VN2222 Series ORDERING INFORMATION FEATURES Package Part • Lo w ros on <7.5£i VN2222LL Plastic TO-92 VN2222LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS

Contextual Info: /-/ilnWi/- VN2222 Series N-Channel Enhancement-Mode MOS Transistors CQIOQIC “” J — VN2222Series FEATURES O R D E R IN G INFORMATION • L o w rDS on <7.50 Package Part VN2222LL Plastic TO-92 VN2222LM Plastic TO-237 For sorted chips in carriers see 2N7000

VQ1000P

Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

VN2410L equivalent

Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

saat

Abstract: VN10LM VN2222LM
Contextual Info: topaz s e m i c o n d u c t o r _ OSE D I TOfiSaSt. O O O l l O G -_ *7 • ^ 4 | T-29-25 — V N 1 Q L M , S E M IC O N D U C T O R ' WS2222LM N-CHANNiL IMHÂMC1M1NT-MOD5: D-MCS POWER FITS ORDERING INFORMATION TO-237 Plastic Package