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IRFF Datasheets (500)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFF014	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF	44.22KB	1
IRFF024	International Rectifier	HEXFET Power Mosfet	Original	PDF	134.6KB	7
IRFF024	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF	12.12KB	1
IRFF034	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF	12.08KB	1
IRFF034	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF	44.22KB	1
IRFF110	International Rectifier	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE	Original	PDF	133.16KB	7
IRFF110	Intersil	3.5A, 100V, 0.600 ?, N-Channel Power MOSFET	Original	PDF	334.16KB	7
IRFF110	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF	12.13KB	1
IRFF110	General Electric	Power Transistor Data Book 1985	Scan	PDF	128.82KB	2
IRFF110	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.	Scan	PDF	177.47KB	5
IRFF110	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	182.23KB	5
IRFF110	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF	102.24KB	1
IRFF110	International Rectifier	N-Channel Power MOSFETs	Scan	PDF	36.85KB	1
IRFF110	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF	44.22KB	1

IRFF110	Motorola	European Master Selection Guide 1986	Scan	PDF	59.59KB	1
IRFF110	Motorola	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Scan	PDF	36.25KB	1
IRFF110	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	39.81KB	1
IRFF110	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	39.81KB	1
IRFF110	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	129.94KB	1
IRFF110	Unknown	FET Data Book	Scan	PDF	182.86KB	3

...

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Harris Semiconductor IRFF9222 IRFF9222
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	IRFF9222		1,668		186	1 - 10 - 100 - 1000 $1.81 10000 $1.71	Buy Now
	IRFF9222		330		186	1 - 10 - 100 - 1000 $1.81 10000 $1.71	Buy Now
Harris Semiconductor IRFF223 IRFF223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IRFF223		1,395		221	1 - 10 - 100 - 1000 $1.41 10000 $1.26	Buy Now
International Rectifier IRFF211 IRFF211
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IRFF211		1,012		221	1 - 10 - 100 - 1000 $1.40 10000 $1.25	Buy Now
Rochester Electronics	IRFF211		1,043		1	1 - 10 - 100 $1.36 1000 $1.12 10000 $1.00	Buy Now
International Rectifier IRFF9232 IRFF9232
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IRFF9232		577		213	1 - 10 - 100 - 1000 $1.57 10000 $1.48	Buy Now
Harris Semiconductor IRFF211 IRFF211
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IRFF211		500		221	1 - 10 - 100 - 1000 $1.40 10000 $1.25	Buy Now
Rochester Electronics	IRFF211		500		1	1 - 10 - 100 $1.36 1000 $1.12 10000 $1.00	Buy Now

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IRFF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LD 33 regulator Abstract: JANTXV2N6800 IRFF330 JANTX2N6800 Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International	Original	90432c irff330 jantx2n6800 jantxv2n6800 +3mil-prf-19500/557 o-205af ld 33 regulator	PDF
Contextual Info: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	irff9130 -100v	PDF
0,2uf 250V 6A Contextual Info: IRFF420 Data Sheet Title FF4 bt 6A, 0V, 00 m, March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	irff420 tb334 0,2uf 250v 6a	PDF
Contextual Info: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	irff330 tb334	PDF
Contextual Info: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	irff120 o-205af tb334	PDF
TA17441 Contextual Info: IRFF110 Data Sheet Title FF1 bt 5A, 0V, 00 m, March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	irff110 o-205af tb334 ta17441	PDF
25CC Abstract: IRFF210 IRFF213 Contextual Info: MOTOROLA SC XSTRS/R F la g D \| b3b?aS4 OQflt.703 T \| T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20	OCR Scan	irff210 irff213 o-205af 25cc	PDF
IRF 260 N Abstract: IRFF220 JANTX2N6790 JANTXV2N6790 Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International	Original	90427d o-205af irff220 jantx2n6790 +4jantxv2n6790 mil-prf-19500/555 t0-39 irf 260 n	PDF
IRFF122 Abstract: IRFF123 Contextual Info: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	irfif122 irff122 irff123-irff123	PDF
IRF3303 Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333 Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •	OCR Scan	irff330 irff331 irff332 irff333 +3iff33 irf3303 oa 161 diode	PDF
IRFF034 Contextual Info: IRFF034 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	irff034 o205af 11-oct-02	PDF
IRFF024 Contextual Info: IRFF024 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	irff024 o205af 11-oct-02	PDF
IRFF330 Contextual Info: IRFF330 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	irff330 o205af 11-oct-02	PDF
Contextual Info: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated	OCR Scan	irff9120 irff9121 irff9122 irff9123	PDF

IRFF420R Abstract: IRFF421R IRFF422R IRFF423R Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■	OCR Scan	irff420r irff421r irff422r irff423r +250v-500v 92cs-42660	PDF
IRFF112 Abstract: IRFF113 Contextual Info: D D . IRFF112.113 \ñ 3.0 AMPERES 100, 60 VOLTS RDS ON = 0.8 n FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	irff112 irff112-irff113	PDF
IRF 3302 Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430 Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited	OCR Scan	irff430 irff431 irff432 irff433 +492cs-3374i irf 3302 2sc 1894 irf 430	PDF
IRFF332 Abstract: IRFF333 Contextual Info: FUT FIELD EFFECT POWER TRANSISTOR IRFF332,333 3.0 AM PERES 400, 350 VOLTS BP S O N = 1-5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	irff332 irff333	PDF
IRFF210 Abstract: IRFF211 Contextual Info: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	irff210 33k/w rff211 irff211	PDF
IRFF9131 Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216 Contextual Info: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d	OCR Scan	irff9130 irff9131 irff9132 irff9133 +3-100v 92cs-43296 transistors c 2216	PDF
2029 mosfet Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R Contextual Info: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	irff330r irff331r irff332r irff333r +450v-400v 2cs-4265s 2029 mosfet ic l00a	PDF
IRFF110 Contextual Info: IRFF110 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	irff110 o205af 11-oct-02	PDF
IRFF210 Contextual Info: IRFF210 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	irff210 o205af 11-oct-02	PDF
Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan		PDF

IRFF Search Results

IRFF Datasheets (500)

IRFF Price and Stock

Harris Semiconductor IRFF9222

Harris Semiconductor IRFF223

International Rectifier IRFF211

International Rectifier IRFF9232

Harris Semiconductor IRFF211

IRFF Datasheets Context Search

LD 33 regulator

0,2uf 250V 6A

TA17441

25CC

IRF 260 N

IRFF122

IRF3303

IRFF034

IRFF024

IRFF330

IRFF420R

IRFF112

IRF 3302

IRFF332

IRFF210

IRFF9131

2029 mosfet

IRFF110

IRFF210