IRFF Search Results

LD 33 regulator

Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International

Contextual Info: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

0,2uf 250V 6A

Contextual Info: IRFF420 Data Sheet Title FF4 bt 6A, 0V, 00 m, March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TA17441

Contextual Info: IRFF110 Data Sheet Title FF1 bt 5A, 0V, 00 m, March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

25CC

Abstract: IRFF210 IRFF213
Contextual Info: MOTOROLA SC XSTRS/R F la g D | b3b?aS4 OQflt.703 T | T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20

IRF 260 N

Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International

IRFF122

Abstract: IRFF123
Contextual Info: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF3303

Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •

IRFF034

Contextual Info: IRFF034 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

IRFF024

Contextual Info: IRFF024 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

IRFF330

Contextual Info: IRFF330 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

Contextual Info: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated

IRFF420R

Abstract: IRFF421R IRFF422R IRFF423R
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■

IRFF112

Abstract: IRFF113
Contextual Info: D D . IRFF112.113 \ñ 3.0 AMPERES 100, 60 VOLTS RDS ON = 0.8 n FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF 3302

Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited

IRFF332

Abstract: IRFF333
Contextual Info: FUT FIELD EFFECT POWER TRANSISTOR IRFF332,333 3.0 AM PERES 400, 350 VOLTS BP S O N = 1-5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF210

Abstract: IRFF211
Contextual Info: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF9131

Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
Contextual Info: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d

2029 mosfet

Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R
Contextual Info: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IRFF110

Contextual Info: IRFF110 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

IRFF210

Contextual Info: IRFF210 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical