IRFF131 Search Results

Contextual Info: i H A R R IRFF130, IRFF131, IRFF132, IRFF133 i s s e - c o . o u c t o r 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

18261

Abstract: IRFF130 IRFF131 IRFF132 IRFF133
Contextual Info: 3 |t | 3 û 75[]ô 1 0 0 1 0 2 5 e! b ~ 38 750 81 G E S O L I D S T A TE 0 1 E 18259 Standard Power M O S F E T s _ IRFF130, IRFF131, IRFF132, IRFF133 D File N um ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRFF130R

Abstract: IRFF131R IRFF132R IRFF133R
Contextual Info: Rugged Power MOSFETs File Number 2024 IRFF130R, IRFF131R, IRFF132R, IRFF133R Avalanche Energy Rated N-Channel Power MOSFETs 7 ,0A and 8.0A, 60V-100V rDs on = 0 .1 8 0 a nd 0.25Q N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated

IRFF130

Contextual Info: IRFF130, IRFF131, IRFF132, IRFF133 S E M I C O N D U C T O R 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF130

Abstract: IRFF131 IRFF132 IRFF133 C 3259
Contextual Info: -Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 File Num ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

transco

Abstract: IRFF131
Contextual Info: ih a r r is IRFF130, IRFF131, IRFF132, IRFF133 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate

Contextual Info: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current

IRFF131

Abstract: IC 3909 G-337 G337 diode 341F IRFF130 IRFF132 IRFF133 g337 ir mosfet 337
Contextual Info: 11E D I 4ÖSS4S2 0001350 7 | i n t e r n a t i o n a l Data Sheet No. PD-9.341F r e c t i f i e r INTERNATIONAL RECTIFIER IÖR T-39-09 HEXFET TRANSISTORS IRFF130 IRFF131 IRFF132 IRFF133 N-CHANNEL POWER MOSFETs T Ü -3 9 PACKAGE 100 Volt, 0.18 Ohm HEXFET

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
Contextual Info: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N6796

Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

9358

Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
Contextual Info: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM

mfe9200

Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0

4433 mosfet

Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Contextual Info: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package T0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRFD110

Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5

IRF1401

Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
Contextual Info: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

MOSFET cross-reference

Abstract: 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2010. MIL-PRF-19500/557H 24 June 2010 SUPERSEDING MIL-PRF-19500/557G 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

IRF510

Abstract: irf540
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5

Contextual Info: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y