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    2N6798 Price and Stock

    Microchip Technology Inc 2N6798

    MOSFET N-CH 200V 5.5A TO39
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    Microchip Technology Inc JAN2N6798

    MOSFET N-CH 200V 5.5A TO39
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    Microchip Technology Inc JAN2N6798U

    MOSFET N-CH 200V 5.5A 18ULCC
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    Microchip Technology Inc JANTX2N6798

    MOSFET N-CH 200V 5.5A TO205AF
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    Microchip Technology Inc JANTXV2N6798

    MOSFET N-CH 200V 5.5A TO205AF
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    2N6798 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6798 Defense Supply Center Columbus N-Channel FET Original PDF
    2N6798 Fairchild Semiconductor TRANS MOSFET N-CH 200V 5.5A 3TO-205AF Original PDF
    2N6798 International Rectifier TRANS MOSFET N-CH 200V 5.5A 3TO-205 Original PDF
    2N6798 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6798 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V TO-205AF TO-39 Original PDF
    2N6798 Semelab N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original PDF
    2N6798 Semelab N-Channel Enhancement Mode Transistor Original PDF
    2N6798 Semelab N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original PDF
    2N6798 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6798 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6798 Motorola European Master Selection Guide 1986 Scan PDF
    2N6798 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6798 Unknown FET Data Book Scan PDF
    2N6798 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6798 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6798 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6798 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6798 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6798 Semelab MOS Transistors Scan PDF
    2N6798 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    2N6798 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6798

    Abstract: IRFF230
    Text: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


    Original     		PDF IRFF230 2N6798 O-205AF) 2N6798 IRFF230

    Untitled

    Abstract: No abstract text available
    Text: 2N6798 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6798 O205AF) 11-Oct-02

    2n6798

    Abstract: 2N6798L 2N6798-JQR-B
    Text: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES


    Original     		PDF 2N6798 2N6798" 2N6798 2N6798-JQR-B 2N6798L 2N6798LCC4 2N6798LCC4-JQR-B 2N6798SMD 2N6798SMD-JQR-B O276AB)

    JANTX2N6796

    Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
    Text: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, 2N6798 2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor


    Original     		PDF 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798

    2N6798

    Abstract: 2N6798U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6798 2N6798U 10Vdc, 77Vdc T4-LDS-0049 2N6798 2N6798U

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6798 O-205AF. T4-LDS-0167

    Untitled

    Abstract: No abstract text available
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


    Original     		PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF T4-LDS-0047-1,

    2N6798

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6798 O-205AF. T4-LDS-0167 2N6798

    2N6880

    Abstract: 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


    Original     		PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 T4-LDS-0047, 2N6880 2N6798 JANTXV

    2N6798

    Abstract: 2N6798U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6798 2N6798U T4-LDS-0049 2N6798 2N6798U

    2N6798

    Abstract: No abstract text available
    Text: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES


    Original     		PDF 2N6798 00A/mS 300ms 2N6798

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


    Original     		PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 2N67n T4-LDS-0047, DD 127 D TRANSISTOR transistor DD 127 D 2N6880 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV

    DD 127 D transistor

    Abstract: 2n6798u 2N6796U
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


    Original     		PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF 2N6796, 2N67mensions T4-LDS-0047-1, DD 127 D transistor 2N6796U

    2N6798

    Abstract: TB334
    Text: 2N6798 Data Sheet November 1998 File Number 1903.2 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features The 2N6798 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching


    Original     		PDF 2N6798 2N6798 TB334 O-205opment. TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


    Original     		PDF IRFF230 2N6798 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6798 2N6798U T4-LDS-0049

    2N6798

    Abstract: IRFF230 6150C
    Text: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


    Original     		PDF IRFF230 2N6798 O-205AF) 2N6798 IRFF230 6150C

    2N6798

    Abstract: No abstract text available
    Text: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES


    Original     		PDF 2N6798 00A/mS 300ms 2N6798

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2n6798 jantx

    Abstract: 2N6798 IH0063 2N6756 QPL-19500
    Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited


    OCR Scan     		PDF 2N6798 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2n6798 jantx IH0063 2N6756 QPL-19500

    Untitled

    Abstract: No abstract text available
    Text: • 430ZZ71 0053731, ?2fl ■ HAS 2N6798 ££j HARRIS N-Channel Enhancement-Mode Power M O S Field-Effect Transistor A ugust 1991 Features Package T0-205AF • 5.5A, 200V B O T T O M V IEW • rDS{on = °-4 n • S O A is Power-Dissipation Limited GATE SO U RCE


    OCR Scan     		PDF 430ZZ71 2N6798 T0-205AF LH0063

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		PDF GD1D572 2N6797 2N6798 1347Tk

    2N6797

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching


    OCR Scan     		PDF 2N6797 2N6798

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent