2N6787 Search Results

Contextual Info: TE D DEI ^ EI ci347clt.3 0QlUb4d UnTtrode cokh 9347963 UN I TRODE CORP 92D POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel 10542 D r -3*1-01 2N6787 2N6788 FEATURES • Fast S w itch in g • Low Drive C urren t DESC RIPTIO N T h e U n itrode pow er M OSFET design utilizes th e m ost advanced technology available.

2n6788

Abstract: 2N6787 S/2N6787
Contextual Info: 2N6787 2N6788 POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros»h> and a high transconductance.

2n6152

Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
Contextual Info: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id

2N5158

Abstract: 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N6757 2N6758 2N676 2N6762
Contextual Info: - ; £ H £ }± Vd s or € * Vd g % V Vg s m (ÌR=2bV) ID fi*J sé Id s : Fd Vg s th) Ciss I d (oíi ) Vd s = Coss Crss * /CH * /CH (A) (Vf) (max) (nA) Vg s (V) ( M A) (max) m ax Vd s (V) (V) (V) # B til % V g s -O Vg s (V) Id ♦typ (mA) (0) Vg s (V) ♦typ

Contextual Info: SEMELAB LTD 37E ] • Ô1331Ô7 0Q0030S H JAN 0 5 1988 SEMELAB 2N 6787 2N 6788 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES PIN 1-S o u rce PIN 2 -G a te PIN 3 Drain and Case

2N3824

Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
Contextual Info: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -

9358

Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
Contextual Info: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM

jfet selector guide

Abstract: T0-220SM
Contextual Info: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763

2n6152

Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676
Contextual Info: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=25*0 I d (o n ) Vd s = Vg s C iss Coss C rss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) ft & m n Vg s =0 (max)

T0220H

Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
Contextual Info: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

UFN540

Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State