2N676 Search Results

2N6764

Abstract: 2N6763 27812
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DË 3 4 ^ 7 4 3469674 F AIRCHILD SEMICONDUCTOR □□27Û1D 1 J - 84D 2 7 8 1 0 D 2N6763/2N6764 T - *7-/3' N-Channel Power M O SFETs, 38 A, 60 V/100 V' F A IR C H IL D A Schlumberger Company Power And Discrete Division TO-2Q4AE

2n5764

Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
Contextual Info: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers

switching circuit

Contextual Info:



    
  The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS 


    
  
  
 
    
     

mosfet to3

Abstract: irf33 2N6760 IRF330 LE17
Contextual Info: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available

Contextual Info: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches 39.95 (1.573) N-CHANNEL POWER MOSFET max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

NX DIODE SM

Abstract: 2N6164 2N6764 q2N6764 MOSF6
Contextual Info: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

1A31E

Abstract: 2N6759 2N6760
Contextual Info: 3 8 7 5081 G E SOL ID S T A T E 01 DE | 3fi7SDfll □ □ 1 0 3 *1 5 a r ° • , T ' 3 9 ’ 11 _ Standard Power MOSFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Poyver Field-Effect Transistors 4.5A and 5.5A, 350V - 400V rDs on = 1.0 fi and 1.5 Q

2N6760

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6761

Contextual Info: 2N 6761 2N6762 23 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Pa ckage T O -2 0 4 A A * 4.0A and 4.5A, 450V - 500V B O T T O M V IE W * rDS on = 1-5fî and 2.o n DRAIN f (FLANGE) SO U R C E * S O A is Power-Dissipation Limited

Contextual Info: 2N676 Transistors Complementary Multi-Chip Composite Trans Pair Number of Devices V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)3.0 P(D) Max. (W)10 h(FE) Min. Current gain.15k h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq

Contextual Info: m 2N6764 \ \ N-CHANNEL POWER MOSFET DESCRIPTION: The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS Id 38 A @ Tc = 25 °C 24 A @ T C= 100 °C V ds 100 V PACKAGE STYLE TO -204A E 1.550 - 39.37 — MAX

Contextual Info: 37E SEMELAB LTD D Ö1331Ö7 dec* «1Q 87 SEMELAB \b 2N 6763 2N6764 /,tao MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I*-1.6 1 i 39.5 APPLICATIONS 20.3 • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS 9.0 12.0 PIN 1-G a te

2N6770

Abstract: 2N6769
Contextual Info: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited

2N6770

Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
Contextual Info: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited

2N6760

Abstract: 2N6898 2N67 2N6759
Contextual Info: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds

2N6760

Abstract: MF2400 2N6759 E7A04
Contextual Info: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power

Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

Contextual Info: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

2N6761

Abstract: 2N6762 2N6767 2nc762
Contextual Info: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi

Contextual Info: 2N6764+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)38 I(DM) Max. (A) Pulsed I(D)24 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

Contextual Info: 2N6762+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ