2N670 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

2N6702

Abstract: C 3311 transistor
Contextual Info: 7 ^ 2 3 7 002=1425 û • " 'T 3 3 -I SGS-THOMSON u n ilL J iS T M K i S G S-TH0MS0N 2 N6702 30E T> SWITCHING AND GENERAL PURPOSE DESCRIPTIO N The 2N6702 is a silicon muitiepitaxial planar NPN transistor and is mounted in Jedec TO-220 plastic package. It is intended for various switching and general pur­

2N6708

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

2N6701

Abstract: s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n HPAC-100
Contextual Info: m COM PONENTS LINEAR POWER TRANSISTOR 2N6701 HXTR-5101 Features H IG H P 1dB LIN E A R PO W ER 23 dBm Typical at 2 G Hz 22 dBm Typical at 4 G Hz BIPOLAR 1.0 '0.041 TYP TRANSISTORS HEW LETT W , PACKARD H IG H P1dB G A IN 13 dB Typical at 2 G Hz 7.5 dB Typical at 4 GHz

2N6701

Contextual Info: m ASI 2N6701 \ \ SILICON NPN RF TRANSISTOR DESCRIPTION: The ASI 2N6701 is Designed fo r L inear P ow er A m p lifie r A pplications to 4 G Hz . FEATURES: • Direct R eplacem ent fo r 2N6701 & HP HXTR5101 • Gold M etalization • Herm etic Package MAXIMUM RATINGS

2N6703

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2N6703 DESCRIPTION • Collector-Emitter Sustaining Voltage:VCEO(sus)=110V(Min) • High Switching Speed 3 1.BASE

2N6708

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6709 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6708 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6707 NPN SILICON PLANAR EPITAXIAL TRANSISTORS This Device was Designed for General Purpose Medium Power Amplifier.

2n6704

Contextual Info: ^ £/-\oaue£i, One. j TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor 2N6704 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 130V(Min) • High Switching Speed

HXTR-5103

Contextual Info: HEliJLETT-PACKARDi C MPNT S E OE D □ 4447SÔ4 OOOSS41 =1 □ K ’h n b H E W LETT HOM P A C K A R D _ ~ X '~ 1 'i~ 0 5 L inear P ow er Transistors HXTR-5001 Chip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV) Features D escription

2N6700

Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. NPN 2N 6714 2N 6715 2N 6724 2 N 6725 2N 6716 2N 6717 2N6731 2N 6718 PNP V CBO V e t o 2N 6726 2N 6727 — — 2N 6728 2N 6729 2N 6732 2N 6730 !C !c m P,0, Max. V CE|Sat at V V A A V 40 50 50

CA3725

Abstract: i848 Power Transistors SIT TA916 2n6704 2N6702
Contextual Info: T'3 e>-/9 2N6702, 2N6703, 2N6704 HARRIS SEniCOND SECTOR File Number SbE D 1187 43Q2E71 Q04Gb32 TTb « H A S High-Current, Silicon N-P-N VERSAWATT Transistors TERMINAL DESIGNATIONS _ Switching Applications Feature«: • Fast switching speed at temperatures up to 125° C

2n6700

Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA

NPN transistor bc 148

Abstract: 2N6704 bc 148 npn transistor ca3725 2N6702 RCA transistors 2N6703 transistor BC 147 RCA Solid State Power Transistor
Contextual Info: ~GÏ 3875081 » T|Bä7S0öl G E S O LI D STATE 01E 0017144 b f D1 ~S S ~U 17144 High-Speed Power i 2N6702, 2N6703, 2N6704 File Number High-Current, Silicon N-P-N VERSAWATT Transistors

2N4703

Contextual Info: 2N6702, 2N6703, 2N6704 File N um ber High-Current, Silicon N-P-N VERSAWATT Transistors 1187 TERM INAL DESIGNATIONS Switching Applications i _ c FLA N G E Feature«: • Fast sw itching speed at temperatures up to 12S°C ■ Low Vcsisat) ■ VERSAWATT plastic package

TO-237

Abstract: 2N6709
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6709 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

2N6702

Contextual Info: SavantIC Semiconductor Product Specification 2N6702 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·Designed for converters,inverters, pulse-width-modulated regulators

HXTR-5101

Abstract: 2N6701
Contextual Info: m ASI 2N6701 \ \ SILICON NPN RF TRANSISTOR DESCRIPTION: The ASI 2N6701 is Designed for Linear Power Amplifier Applications to 4 GHz . FEATURES: • Direct Replacement for 2N6701 & HP HXTR5101 • Gold Metalization • Hermetic Package MAXIMUM RATINGS 120 lc

2N6707

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

HXTR-5103

Abstract: HXTR-5101 S31E2 2N6701 2N6741 HXTR-5001 5101 2N5701 HXTR-5101TXV
Contextual Info: HEWLETT-PACKARD-. CMPNTS EOE D □ 4447SÖ4 OOOSS41 1 B L in ea r P o w e r T ran sisto rs HXTR-5001 C hip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV ) F eatu res D escrip tion • H igh Output P ow er 23 dBm Typical PliB at 2 GHz

Contextual Info: 2N6701 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)