LE174JB Search Results

5962-8874601UA

Abstract: CBCC2-N3 SG7905AG SDP7905AUMD SMD TRANSISTOR MARKING 6C 5962-8874601XA qml-38535 SDP7905ATMD 7905a CBCC1-N3
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R025-93. 93-03-11 M. A. FRYE B Add case outline N. Techical and editorial changes throughout. Redrawn. 95-03-27 M. A. FRYE C Changes in accordance with NOR 5962-R132-96.

Contextual Info: 37E D SEMELAB LTD 0133107 DGOOlûb T • STILB \_ T ' 3 3 -1 3 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M EC H A N IC A L DATA Dimensions in mm FEATURES

34333

Abstract: 5962-8670402FA 5962-8670402HA qml-38535 U3158 CDFP2-F10 5962-86704 5962-8670404HA 5962-8670406PA UC1843AJ
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add vendor CAGE 34333. Add vendor CAGE U4637. Editorial changes throughout. 87-04-16 M. A. Frye B Add device types 02, 03, and 04. Editorial changes throughout. 87-12-21 M. A. Frye C Change vendor CAGE 12969 to 48726. Change max duty cycle min limit. Add

OM7815AIH

Abstract: TRANSISTOR 7815A U3158 qml-38535 5962-8855301UA 7815A CQCC1-N20 5962-8855301ta
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outlines T and U. Add vendors CAGE 69210 and U4637. Change limits for line regulation, load regulation tests and standby current drain test at temperature. Add temperature testing limit for Ripple rejection test.

7912A

Abstract: SDP7912AUMD TRANSISTOR 7912A CBCC2-N3 CBCC1-N3 QML-38535 7912A mount surfaced CQCC1-N20 5962-8874701XA solitron rectifier
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outline N. Make changes to 1.2.2, 1.3, and figure 1. - ro 98-12-17 R. MONNIN B Add case outline 2. Make changes to 1.2.2, 1.3, table I, and figure 2. - ro 99-10-21 R. MONNIN C Add radiation hardness requirements. Add case outline M. Make changes to

Contextual Info: 37E SEMELAB LTD D Ö1331Ö7 dec* «1Q 87 SEMELAB \b 2N 6763 2N6764 /,tao MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I*-1.6 1 i 39.5 APPLICATIONS 20.3 • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS 9.0 12.0 PIN 1-G a te

Contextual Info: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V

OM7815AIH

Abstract: UC7815AIG TRANSISTOR 7815A qml-38535 CQCC1-N20 U3158 TO-66 can transistor smd marking Ag 5962-8855301
Contextual Info: R E V IS IO N S LTR D E S C R IP T IO N D A TE Y R -M O -D A APPROVED A A dd ca se o u tlin e s T and U. A dd v e n d o rs C A G E 6 9 2 1 0 and U 4637. C han ge lim its fo r lin e re g u la tio n , load re g u la tio n te s ts and s ta n d b y c u rre n t drain te s t at

7703406UA

Abstract: qml-38535 7703405XA ip117ahvh 7703402UA MARKING CODE 21L SMD 7703405UA LM117HV LM137 LT117A
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED P Add case outline M. Technical changes and corrections to table 1. Editorial changes throughout. 93-10-02 M. A. FRYE R Add class V level devices. Update boilerplate. - ro 99-06-08 R. MONNIN T Add case outline N. Make changes to 1.2.4, P □, theta JC, Im a x as specified in

transistor z15 smd

Abstract: UA78M12MJGB QML-38535 5962-87776012A 7812 a SG7812AK 78M12 CQCC1-N20 Omnirel uc78
Contextual Info: R E V IS IO N S LTR D E S C R IP T IO N D A TE Y R -M O -D A APPROVED A A dd ca se o u tlin e s T and U. C h a n g e lim its fo r V o u t , I¡ne re g u la tio n , load re g u la tio n , s ta n d b y c u rre n t dra in ; w ith line and w ith load te sts. C h a n g e

LM109K-DESC

Abstract: qml-38535 5962-8777401ya lm109k LM109 MIL-PRF38535
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 04-06-16 Raymond Monnin Drawing updated to reflect current requirements. - gt. THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A A OF SHEETS SHEET

Contextual Info: T - 3 3 -/s- J SEMELAB LTD 37E D • 0133167 OOODlbM T ISM LB SEMELAB DEC 3 1 1987 7*// ^ BUP53 NPN MULTI-EPITAXIAL TRANSISTOR Designed for high energy applications requiring robust fast switching devices MECHANICAL DATA Dimensions in mm FEATU RES • LOW VCEI„„

Contextual Info: SEMELAB LTD 37E D E C * 1 ig ff? ,J> Ö1331Ö7 0000577 SEMELAB T ^ O 2N 6659 / i<?Q MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I D 1 APPLICATIONS Î 8 .5 max. • SWITCHING REGULATORS i • CONVERTERS u PIN 1-S o u rc e P IN 2G ate

BUZ10

Contextual Info: 37E SEMELAB LTD D • Ö13B1Ö7 □ □ □ 0 E 3 ci M ■ SNLB % 1*4 0 4 o 'f 7F SEMELAB BUZ 10 M O S POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm lVJ. 3 _ 10 r max. ma A . 5 m ax 1.3 5 .9 T m in . APPLICATIONS 5.1 15.8 sL | J m ax.

Contextual Info: Ô1331Ô7 Q00Q21b 3 37E D SEMELAB LTD SEMELAB JUL 0 6 133ßf v\i> N EW PRODUCT B U X 98CPF NPN PLANARTRANSISTOR MULTI EMITTER ION-IMPLANTED FOR FAST SWITCHING APPLICATIONS M EC H A N IC A L DATA Dimensions in mm FEATURES 50 • HIGH BREAKDOWN VOLTAGE 200 • LOW SATURATION VOLTAGE

LB 124 d

Abstract: npn 10a 800v LE17
Contextual Info: SEMELAB LTD ii 37E D Jl/L 0 6 ¡98$ 01 33107 0DD0224 S SEMELAB 'I 1 NEW PRODUCT BUX 548PF NPN PLANARTRANSISTOR MULTI EMITTER ION-IMPLANTED FOR FAST SWITCHING APPLICATIONS MECHANICAL DATA Dimensions in mm FEATURES 50 200 • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE

U3158

Abstract: SDP1172MD OM1321NHM 7703401za 7703407UA qml-38535 IP137AHVE 7703405UA 77034012A 7703407XA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED P Add case outline M. Technical changes and corrections to table I. Editorial changes throughout. 93-10-02 M. A. FRYE R Add class V level devices. Update boilerplate. - ro 99-06-08 R. MONNIN T Add case outline N. Make changes to 1.2.4, PD, theta JC, IMAX as specified in

UC1525AJ

Abstract: 5962-8951101EA UC1525AJQ 5962-8951103VEA qml-38535 SG1525AF GDFP2-F16 GDIP1-T16 UC1525A UC1525B
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 94-02-28 M. A. FRYE Add case outlines F and 2. Add output noise voltage test to table I, reference section. Change minimum limit for VTH(SYNC) test in table I, oscillator section. Editorial changes throughout.

7812A

Abstract: TRANSISTOR 7812A 7812A voltage regulator UC7812 voltage regulator 7812A features 5962-8777601XA 5962-87776012A qml-38535 5962-8777602XA 5962-8777601UA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outlines T and U. Change limits for VOUT, line regulation, load regulation, standby current drain; with line and with load tests. Change footnotes 1/, 2/, and 5/. Add vendors CAGE U4637 and 69210.

Contextual Info: büE D SEnELAB • 0133107 OOOOMI M PLC 72Ü ■SMLB SEMELAB " P 3 3 -2 BDS18 BDS19 NEW PRODUCT SILICON PNP EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm FEATURES • HERMETIC TO 220 METAL PACKAGE ■{J5- • HIGH RELIABILTY • ISOLATED OPTION

L014A

Abstract: 00D05 IRFY130
Contextual Info: bOE D • B1331Ô7 DOOOSSG SEMELAB 3ÔT ■ S M L B PLC SEMELAB 'T 'Z °\ -w IRFY130 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES • HERMETICT0220 METALOR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

BUW60

Abstract: LE17 Scans-007954
Contextual Info: SEMELAB LTD 37E T> fil331fl7 DDOOnfl SEMELAB JUL 0 8 198Q BUW 60 NPIM MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm FEATURES

Contextual Info: bDE D • SEflELAB Ô1331Ô7 DDDDTEL 7 T 4 ■ S f l L B PLC - SEMELAB D1009UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 150W -28 V-500M H z PUSH-PULL MECHANICAL DATA Dim ensions FEATURES • EXTRA LOW PIN1 SOURCE COMMON

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change vendor name of CAGE U4637. Make changes to 1.2.2, 3.3, 4.2, 4.3.1, 4.3.2. Editorial changes throughout. Make changes to table I. 89-06-15 M. A. FRYE B Sheet 6: Table I, Oscillator section, Sawtooth valley voltage, device type 02,