IRF841 Search Results

irf840

Abstract: IRF841
Contextual Info: iH A R R is SEMIC0NDUCT0R IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF840R

Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Contextual Info: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated

IRF840

Abstract: IRF841 IRF840FI IRF841FI SCHEMATIC irf840 irf-840
Contextual Info: IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF840 IRF840FI TYPE 500 V 500 V < 0.85 Ω < 0.85 Ω 8A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 Ω < 0.85 Ω 8A 4.5 A • ■ ■ ■ TYPICAL RDS(on) = 0.74 Ω

IRF841

Abstract: IRF840 IRF840FI Application of irf840 irf840 power supply IRF841FI IRF840F L44A
Contextual Info: S G S - T H O M ¿ 5 IR F 8 4 0 FI IR F 8 4 1 /F I S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E R D S on Id IRF840 IRF840FI 500 V 500 V V dss < 0.85 Q. < 0.85 Q. 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 Q. < 0.85 Q.

D 843 Transistor

Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
Contextual Info: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843

TRANSISTOR mosfet IRF840

Abstract: IRF840 irf8408 IRF841 3fc relay transistor irf840 Application of irf840 damn IRF842 D 843 Transistor
Contextual Info: MOTOROLA SC XSTRS/R IM E F D I b3b?254 □ O ô T ? Q ci T - MOTOROLA IRF840 IRF841 IRF842 IRF843 • SEM ICO NDUCTOR TECHNICAL DATA P a rt N u m b e r N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h v o lta g e , h ig h

TO-204AE

Contextual Info: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600

IRF840

Abstract: irf840 power supply IRF842 IRF841 IRF843 Application of irf840 irf84 55TT mosfet 3205 IRF342
Contextual Info: Standard Power MOSFETs - IRF840, IRF841, IRF842, IRF843 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL ENHA N C EM EN T MODE 7 A and 8 A, 450 V - 500 V

IRF840

Abstract: SCHEMATIC irf840 IRF841 st irf840 IRF840FI irf 840 TRANSISTORS 132 GD IRF841FI IRF840F 12UC
Contextual Info: IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF840 IRF840FI TYPE 500 V 500 V < 0.85 Ω < 0.85 Ω 8A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 Ω < 0.85 Ω 8A 4.5 A • ■ ■ ■ TYPICAL RDS(on) = 0.74 Ω

P4N70

Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00

IRF840

Abstract: Application of irf840 IRF841 sgs 841 IRF840FI transistor irf840 equivalent irf840 IRF840 and its equivalent irf840 power supply SCHEMATIC irf840
Contextual Info: IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF840 IRF840FI TYPE 500 V 500 V < 0.85 Ω < 0.85 Ω 8A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 Ω < 0.85 Ω 8A 4.5 A • ■ ■ ■ TYPICAL RDS(on) = 0.74 Ω

IRF840

Abstract: IRF842 IRF843 IRF840 HARRIS IRF841 irf840 power supply TA17425 TB334 IRF842 V IRF840 MOSFET
Contextual Info: IRF840, IRF841, IRF842, IRF843 S E M I C O N D U C T O R 7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

.2TY

Abstract: gc224 1N239
Contextual Info: t r i SGS-THOMSON IRF840/FI IRF841/FI ¡L[iOT 2 iQ(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R d S(o ii ) Id IR F 8 4 0 IR F 8 4 0 F I 500 V 500 V 0 .8 5 a 0 .8 5 Q 8 A 4 .5 A IR F841 IR F 8 4 1 F I 450 V 450 V 0 .8 5 a 0 .8 5 L i 8 A 4 .5 A

DIODE cd c318

Abstract: Application of irf840 inverter irf840 K 2611 MOSFET IRF840 application Switching Application of irf840 C322 diode SWB45 ST C318 IRF841
Contextual Info: HE 0 I M Ô 5 54 5 5 INTERNATIONAL aCIOöSbä 2 | Data Sheet No. PD-9.376G RECTIFIER - { 3 INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED* IRF840 IRF841 IRF842 IRF843 HEXFET TRANSISTORS N-CHANNEL Product Summary 500 Volt, 0.85 Ohm HEXFET

D 843 Transistor

Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
Contextual Info: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V

D 843 Transistor

Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
Contextual Info: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842

Contextual Info: *57 T YPE irfs IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS on Id IRF840 IRF840FI 500 V 500 V < 0.85 £2 < 0.85 a 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 ß < 0.85 ß 8 A 4.5 A • . ■ ■ 40 /fi 841/Fl SGS-THOMSON iLiOM)iQ(£I

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

irf8408

Abstract: IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441
Contextual Info: m a a FAIRCHILD c 'i i_ r- i —n - A4 SEMICONDUCTOR DE 1 3 4 t . T t . 7 4 0027^25 IRF440-443/IRF840-843 M TM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V /50 0 V F A IR C H IL D A Schlumberger Company Power And Discrete Division _ -Description

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

irf840

Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j

1RF820

Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90