IRF9523 Search Results

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

R9522

Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
Contextual Info: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1

1RF9620

Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
Contextual Info: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542

IRF9520

Abstract: IRF9523 IRF9521 IRF9522 irf9520 p channel GS 9521
Contextual Info: Rugged Power M O SFETs IRF9520, IRF9521 IRF9522, IRF9523 File Number 2 2 8 1 Avalanche-Energy-Rated P-Channel Power M OSFETs -5 A and -6 A, -60 V and -100 V rDsiom = 0.60 Cl and 0.80 Q TERMINAL DIAGRAM o Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited

f9520

Abstract: irf9520 IRF9520 harris
Contextual Info: h a r r i s IRF9520, IRF9521 IRF9522, IRF9523 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Package F e a tu re s T 0 -2 2 0 A B • -5 A and -6 A , -8 0 V and - 1 00V TOP VIEW • rD S O N = 0 .6 f l and 0 .8 H • Single Pulse Avalanche Energy Rated

R9522

Contextual Info: SUPERTEX I NC □ 1 DE I A 7 7 3 2 T S □□□IbflS =5 f IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T -3 7 -Z 5 Ordering Information b v dss / ^DS<ON '□ ON) (max) (min) -100V 0.BC1 -60V 0.8ft ^DGS O rd er N um ber / P a ck a g e

IRF9521

Abstract: IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32
Contextual Info: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D INTERNATIONAL. RECTIFIER MässMsa oüiassb s • IOR T - 3 ^ - 0 3 TO-220 Package N-CHANNEL Types VDS r D S 0N (max) Iq cont <0M PO T c - 2 5 °C pulsed max A W IRF840 0.85 8.0 3 2.0 125 IR F8 4 2 IRF83 0

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

irf9520

Abstract: IRF9522 9521z irf9521
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521Z9522/9523 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

1RF9540

Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
Contextual Info: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0

1rf730

Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Contextual Info: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRF1401

Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
Contextual Info: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204

IRF9522

Abstract: IRF9523 VP1204N2 VP1206N5 IRF9133 VP0208N2 VP0208N5 VP0209N1 VP0209N2 VP0209N5
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List confd SUPERTEX (Confd) Industry Part No. VP0208N2 VP0208N5 VP0208N6 VP0209N1 VP0209N2 VP0209N5 VP0209N6 VP1204N1 VP1204N2 VP1204N5 VP1206N1 VP1206N2 VP1206N5 VP1208N1 VP1208N2 VP1208N5 VP1209N1

IRF9670

Abstract: IRF9622 CTL04 DK QF DIODE dmosfet irf9620 IM621 359 AU IRF9623 IRF9523
Contextual Info: Data Sheet No. PD-9.351E in t e r n a t io n a l r e c t i f i e r HEXFET TRANSISTORS IRF962Q IRF96S1 P-CHANIMEL 200 VOLT POWER MOSFETs IRFS622 IRF9623 -200 Volt, 1.5 Ohm H E X FE T T0-220A B Plastic Package T h e H E X F E T * te ch n o lo gy la th e h e y to im em afconai R e c tifie rs

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

Contextual Info: 430B271 0054552 47D • h a f r r i s HAS IR F9520, IRF9521 IR F 9 5 22 , IR F 9 5 23 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features TO -220A B • -5 A and -6 A , -8 0 V and -1 0 0 V TOP VIEW • rD S O N = 0 . 6 f l a n d 0 . 8 i l

IRF9511

Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0

1rf730

Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
Contextual Info: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)

DIODE c336

Abstract: IRF952G k 3919 IRF9521 IRF9523 F9522 diode c331
Contextual Info: INTERNATIONAL R E C T I F I E R H E D | 4055455 QQdflSflE ? | Data Sheet No. PD-9.319F INTERNATIONAL RECTIFIER IO R HEXFET TRANSISTORS IRF952G IRF95S1 IRFS5SS IRFS523 Features: -100 Volt, 0.6 Ohm HEXFET T0-220AB Plastic Package T h e H E X FE T® technology is th e key to International R ectifier’s