IRFBG32 Search Results

irfbg32

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBG32 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: IRFBG32 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V) I(D) Max. (A)2.1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)74 Minimum Operating Temp (øC)

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

1rf730

Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Contextual Info: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5

IRFBC20

Abstract: IRF9511 IRFBE32
Contextual Info: International I» i Rectifier HEXFET Power MOSFETs Plastic Insertale Package TO-220 N-Channel Part Number V os Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) •DM Pu'“ Drain Current (Amps)