2N578 Search Results
2N578 Datasheets (165)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N578 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 72.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 82.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 142.36KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 156.12KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | GE Transistor Specifications | Scan | 41.3KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.85KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 92.25KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Vintage Transistor Datasheets | Scan | 50.58KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 95.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N578 | RCA | RCA Transistor and Diode Data | Scan | 41.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5780 | General Electric | Semiconductor Data Handbook 1977 | Scan | 493.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5780 | Motorola | The European Selection Data Book 1976 | Scan | 45.07KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5780 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 26.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5780 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.85KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5780 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 114.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5781 | Central Semiconductor | Small Signal Transistors | Original | 55.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5781 | Semelab | Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10 | Original | 11.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5781 | API Electronics | Short form transistor data | Short Form | 91.91KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5781 | General Electric | Silicon P-N-P epitaxial-base transistor. -80V, 10W. - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10 | Scan | 889.99KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5781 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 88.32KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N578 Price and Stock
Microchip Technology Inc 2N5784Trans GP BJT NPN 65V 3.5A 3-Pin TO-5 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N5784 | 16 | 16 |
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Buy Now | ||||||
RCA 2N5782TRANSISTOR,BJT,PNP,65V V(BR)CEO,3.5A I(C),TO-5 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N5782 | 1,789 |
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Buy Now | |||||||
| 2N5782 | 56 |
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Buy Now | ||||||||
RCA 2N57833500MA, 40V, PNP, SI, SMALL SIGNAL TRANSISTOR, TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N5783 | 1,010 |
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Buy Now | |||||||
General Transistor Corp 2N5785SMALL SIGNAL BIPOLAR TRANSISTOR, 3.5A I(C), 50V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-205MA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N5785 | 34 |
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Buy Now | |||||||
Sabritec 2N5782TRANSISTOR,BJT,PNP,65V V(BR)CEO,3.5A I(C),TO-5 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N5782 | 16 |
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Buy Now | |||||||
2N578 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N5781Contextual Info: 2N5781 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021) |
Original |
2n5781o205ad1-aug-02 | |
TA7290
Abstract: 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
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OCR Scan |
2n57812n57822n57832n5784+11 | |
2N5781Contextual Info: ÀSII 2N5781 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 3.5 A ib 1.O A VeE -es v pd is s 1O W @ Te $ 25 0C Tj -e5 0C to +2OO 0C Ts t g -e5 0C to +2OO 0C |
OCR Scan |
2n5781 | |
C2688
Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
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OCR Scan |
3a7502n57812n57822n5783+11 | |
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Contextual Info: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. 2.54 |
Original |
2n5786o-205ad2n5786-jqr2n5786-jqr-b | |
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Contextual Info: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021) |
Original |
2n5783o205ad17-jul-02 | |
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Contextual Info: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021) |
Original |
2n5783o205ad19-jun-02 | |
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Contextual Info: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016) |
Original |
2n5786200khz300ms | |
2N5786Contextual Info: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) |
Original |
2n5786300ms | |
TA7290
Abstract: 2N5781 TA7272 2N5784 equivalent 2N5783
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OCR Scan |
2n57812n57822n57832n5784+5 | |
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Contextual Info: m 2N5783 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N5783 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 3.5 A Ib 1.0 A V -40 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W |
OCR Scan |
2n5783 | |
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Contextual Info: m 2N5784 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N5784 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS V lc 3.5 A Ib 1.0 A 65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W |
OCR Scan |
2n5784 | |
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Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840 |
OCR Scan |
2n57332n57342n57372n5738+6 | |
2N5785SMDContextual Info: 2N5785SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed |
Original |
2n5785smdo276ab15-aug-02 | |
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2N5782Contextual Info: 2N5782 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021) |
Original |
2n5782o205ad1-aug-02 | |
40852
Abstract: 1431t 70w amplifier 40615 2N5840 2N5954 2N5956 2N5786 2N5838 2N5839
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OCR Scan |
2n57862n58382n58392n5840+7 | |
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Contextual Info: SILICON NPN TRANSISTOR 2N5786 • Low Saturation Voltage. High Gain At High Current. • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) |
Original |
2n5786o-205ad | |
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Contextual Info: 2N5782 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021) |
Original |
2n5782o205ad17-jul-02 | |
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Contextual Info: SILICON NPN TRANSISTOR 2N5786 • Low Saturation Voltage. High Gain At High Current. • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) |
Original |
2n5786o-205ad | |
PT8809
Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
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Original |
spc411sts411ptc403ptc403p+16 | |
2N5782Contextual Info: 2N5782 Silicon P-N-P epitaxial-base transistor. -65V 10W. 16.19 Transis. 1 of 2 Home Part Number: 2N5782 Online Store 2N5782 Diodes Silic o n P-N- P epit ax ial- bas e t rans is to r. -6 5 V 1 0 W. |
Original |
2n5782com/2n5782 | |
2N5786
Abstract: 0057W
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Original |
2n5786o-205ad0057w | |
2N3055 TO-220
Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
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OCR Scan |
2n52932n5294ito-22012n6106+14 | |
2N5784
Abstract: e50c
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OCR Scan |
2n5784e50c | |