2N2325A Search Results

2328a

Abstract: c 2328a
Contextual Info: Silicon Controlled Rectifiers P art N um ber J AN TXV2N 2324S 2N2325 2N2325A ID202 2N2326 2N2326A AD102 AD109 AD116 ID203 JA N 2N2326 JA N 2N 2326A JAN 2N2326A S JA N 2N2326S JA N TX2N 2326 JAN TX2N 2326A JAN TX2N 2326A S JAN TX2N 2326S JA N TXV2N 2326 JA N TXV2N 2326A

scr tag 2 200

Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

JANTX 2N2326A

Abstract: ST201 ST-200A JANTX 2N2324A 2N2324A JANTX
Contextual Info: in THYRISTORS a o PACKAGE DEVICE TYPE TO-39 2N 2323" 2N2323A“ 2N2324’ * 2N2324A* 2N2325A‘ * 2N2326Ä“ DC ON STATE CURRENT AMPS • gt MAX mA VDRM VOLTS 1.6 1.6 1.6 1.6 1.6 1.6 30 50 100 100 150 200 Vg t MAX VOLTS 200 20 200 20 20 20 0.8 0.6 0.8 0.6

BTX30-500

Abstract: btx30-100 BTX30-200 TAG606 TAG606-200 BTX30 TAG611-800 TAG606-600 BTX30-400 2N2324A
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>MC IM M O h T A n D U C IM'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50

Contextual Info: DIGITRON SEMICONDUCTORS 2N2322 A -2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current

2N3555

Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
Contextual Info: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028

Contextual Info: 2N2323-2N2329, J, JTX, JTXV 2N2323A-2N2328A, J, JTX, JTXV 2N2323S-2N2329S, J, JTX, JTXV 2N2323AS-2N2328AS, J, JTX, JTXV SCRs 1.6 Amp, Planar FEATURES • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current • Peak Currents: to 30A

Contextual Info: 2N2323-2N2329, J,JTX, JTXV 2N2323A-2N2328A, J,JTX, JTXV 2N2323S-2N2329S, J,JTX, JTXV 2N2323AS-2N2328AS, J,JTX, JTXV SCRs 1.6 Amp, Planar FEATURES DESCRIPTION • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current

CQ417

Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
Contextual Info: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A

2N3106

Abstract: 2N4146 2N4148
Contextual Info: discrete devices | jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current If (Amps) Max. Forward M ai. Reverie Voltages Vfom /V rom (volts) (Note 2) Maximum Junction Temperature

CR8-04

Abstract: 80G180 DCR604 2N684A 16RC15 C36G C141G 25SDG2JHKO S2512BK
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 20 25SDG2JHKO 25SDG2JHNO 2N1794 DCR604SE0202 DCR504ST0202 MCR67-6 MCR68-6 MCR69-6 ~g~j~:~ Motorola Cl08G NCR150B C15G 2Nl773 2Nl773A NCF150C HSE5053 ClOG g~~~ 25 30 NCF150D 2N1845 2N1845A 2N1845B C36G

ST109

Abstract: ST108
Contextual Info: A POW ERHOUSE SCR THYRISTORS - SILICON CONTROLLED RECTIFIERS PACKAGE TO-39 T0-39 f f ii DEVICE TYPE DC ON STATE CURRENT AMPS VDRM VOLTS •g t MAX PA VGT MAX VOLTS ■h AMPS 2N 2323 1.6 30 200 0.8 0.002 2N2323A 1.6 50 20 0.6 0.002 2N2324 1.6 100 200 0.8 0.002

2N3986

Abstract: 2n1696 2n4146 2N3228 2N4148 LS 2027 2N3555 2n4327 2N6167 2N4331
Contextual Info: | lemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type *Note 1 Forward Current If (»mp«) 2N6S1 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N764* 2N765* 2N766* 2N767" 2N876

2n2345

Abstract: 2N2344 2N3555 2n6336 2N2346 2N3560 2N2009 2N2012 2N2325 2N2348
Contextual Info: A SILICON CONTROLLED RECTIFIERS U O' 180mA TO-18 ro I o a 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 500mA 350mA TO-18 TO-5 TO-18 2N948 30 2N2683 •2N2687 2N5719 2N4109 TO-5 2N2009 2N5720 2N949 2N950 2N5721 2N951 2N2684 2N2688

2N3986

Abstract: LS 2027 2N4146 2N3086 2n3986 sis 2N4148 2N4327 2N1689 LS 2027 amp 2N4331
Contextual Info: ^ discrete devices jemitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current It (»mp«) Mai. Forward M ai. Reverie Voltages V f o m /V ron (volts) (Note 2) Mailmum

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

2N2213

Abstract: 2N2046 2N2545 HI-TRON 2N2344 2N2546 transitron diodes 2N2503 2n2047 16RC15 2N2044
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N1847A Franel Corp Inti Rectfr IntlRect JA Semitronics St Semicon Trans-Tek 2N18478 Inti Device IntlRect IT Semitronics Texas Instr 2N1848 Franel Corp Inti Rectfr IntlRect JA Semicon Com Sensitron

2N8402

Abstract: SN232 2n883 mi SN2014 2n4146 2N3560
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T 3 '- ä $ - 'O discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current 1 44 l (»m p») Max. Forward Max. R ev in t Voltate» Vfo m / V hom