2N2329 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 2N2322 A -2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N2323A

Abstract: 2n2326 2N2329
Contextual Info: Silicon Controlled Rectifier 2N2323, 2N2324, 2N2326, 2N2328 & 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329AS Features • Available in JAN, JANTX and JANTXV

Contextual Info: 2N2323-2N2329, J, JTX, JTXV 2N2323A-2N2328A, J, JTX, JTXV 2N2323S-2N2329S, J, JTX, JTXV 2N2323AS-2N2328AS, J, JTX, JTXV SCRs 1.6 Amp, Planar FEATURES • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current • Peak Currents: to 30A

Contextual Info: 2N2329 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N2323-2N2329, J,JTX, JTXV 2N2323A-2N2328A, J,JTX, JTXV 2N2323S-2N2329S, J,JTX, JTXV 2N2323AS-2N2328AS, J,JTX, JTXV SCRs 1.6 Amp, Planar FEATURES DESCRIPTION • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current

2N23232

Abstract: 2M2324A DELAY 701 2n2323a-2n2328a
Contextual Info: SCRs 2N2323-2N2329, J,JTX, JTXV 2N2323A-2N2328A, J,JTX, JTXV 2N2323S-2N2329S, J,JTX, JTXV 2N2323AS-2N2328AS, J,JTX, JTXV 1.6 Amp, Planar FEATURES DESCRIPTION • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current

2N2329

Abstract: 2N2327 2N2328
Contextual Info: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings

2N2324

Abstract: 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 semiconductor case marking 16 2N2328
Contextual Info: 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing

JAN2N2324

Abstract: Unitrode 2n2323 JANTX 2N2324 2N2325 432t JANTX 2N2326 2N2323 2N2324 JANTX2N2326A JANTX2N2323
Contextual Info: SCRs 2N2322-2N2329 2N2323A-2N2328A 1.6 Amp, Planar FEATURES DESCR IPTIO N • A vailable as JA N , JA N T X V & JA N T X V Types • 1.6A D.C. C u rre n t • Peak Currents: to 30A • V oltage R atings: to 400V • 20/iA Max. T rigger C u rre n t "A " types

RE130

Abstract: 2n2323
Contextual Info: 2N2323 thru 2N2329 S ilic o n Controlled Rectifiers Reverse B lo c k in g Triode T h yristors . . all diffused P N P devices designed for gating operation in mAJ/jA signal or detection circuits. • • • • SC Rs 1.6 A M P E R E S R M S 50 thru 400 V O LT S

Contextual Info: 2N2329 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

brx49

Abstract: Thyristors BRX49 BRX44/PH
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors THYRISTORS type number V rrm max. V LEADED TYPES 2N881/PH 2N2329 BRX44/PH BRX45/PH BRX46/PH BRX47/PH BRX48/PH BRX49/PH 200

2N2328A

Abstract: 2N2324 2n2329 2N2329s JANtx 2N2324 JANTXV 2N2323 JANTX 2N2326 JANTX 2N2324A
Contextual Info: TECHNICAL DATA SILICON CONTROLLED RECTIFIER Qualified per MIL-PRF-19500/276 Devices Qualified Level 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S 2N2326A 2N2326AS 2N2328 2N2328S 2N2328A 2N2328AS JAN JANTX JANTXV 2N2329 2N2329S

2N2329

Contextual Info: 2N2329 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021)

2N2323S-2N2328S

Abstract: JANTX2N2324S 2n2321 JANTX2N2 2N2325 application 2N2323 JANTX 2N2326 2N2323A JAN2N2323S JANTX2N2323S
Contextual Info: SCRs 2N2323-2N2329, J,JTX, JTXV 2N2323A-2N2328A, J,JTX, JTXV 2N2323S-2N2329S, J,JTX, JTXV 2N2323AS-2N2328AS, J,JTX, JTXV 1.6 Amp, Planar FEATURES • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current • Peak Currents: to 30A

New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50

GE C106B1

Abstract: SCR C106Y1 ge c106d1 GE C106A1 ge C106Y1 SCR C103 GE C6U GE C6F 2N1931 c106B1 scr
Contextual Info: 232 232 232 232 o O PHASE CONTROL SCR’s LOW CURRENT .5 TO 4.0 AMPERES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O » 15-400 15-400 o.so

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

SCR C106Y1

Abstract: ge c106b1 1N177 2N1777A 2N2344 2N1932 G C106B1 2N1931 Z4XL18 2N2346
Contextual Info: 232 232 232 O 232 o P H A S E C O N T R O L SCR’ s LOW C U R R E N T .5 TO 4.0 A M P ER ES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O »

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current