2SA143 Search Results

2-7D101A

Contextual Info: 2SA1430 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm STOROBE FLASH APPLICATIONS. M ED IUM PO W ER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hpE Linearity : hj'E(l) = 140~600 (Vq e = —IV, I q = —0.5A) : hj'E( 2) = 60(M in.), 120 (Typ.) (VCE= - IV, I c = - 4 A )

Transistor A1431

Abstract: a1431 a1431 transistor 2-7D101A 2SA1431 A-1431
Contextual Info: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)

2SA1432

Abstract: 2-7D101A 2SC3672 A1432
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: TOSHIBA 2SA1432 2 S A 1 432 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS. PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. 7.1 MAX • • •

Contextual Info: TOSHIBA 2SA1432 2 S A 1 432 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • • • 7.1 M A X

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

EN3471

Abstract: 2SA1433
Contextual Info: Ordering number:EN 3471 _ 2SA1433 No.3471 r PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • High fx Gain-Bandwidth Product •Small reverse transfer capacitance (cre = 1.3pF) • Adoption of FBET process

EN3471

Abstract: 2SA1433
Contextual Info: Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.

2SA1435

Abstract: ITR03602 ITR03603 ITR03604 ITR03605 ITR03606
Contextual Info: Ordering number:ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0

vqe 14 display

Abstract: 2SA1432 ed 3b general semiconductor 2-7D101A 2SC3672
Contextual Info: 2SA1432 TO SH IBA 2 S A 1 432 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 7.1 MAX CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • •

2SA1435

Abstract: ITR03602 ITR03603 ITR03604 ITR03605
Contextual Info: Ordering number:ENN1856B PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2SA1433

Abstract: ITR03587
Contextual Info: 2SA1433 Ordering number : ENN3471A SANYO Semiconductors DATA SHEET 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF).

2SA1437

Abstract: ITR03622 ITR03623 ITR03624 ITR03625 ITR03626
Contextual Info: 注文コード No. N 2 5 2 4 A 2SA1437 No. N2524A 30300 半導体ニューズ No.2524 とさしかえてください。 2SA1437 PNP エピタキシァルプレーナ形シリコントランジスタ 高 hFE, 低周波一般増幅用 用途 ・ 低周波一般増幅 , 各種ドライブ , ミューティング回路。

Contextual Info: TOSHIBA 2SA1431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 a v « m • ■ 3 m tr 1 m Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hpE Linearity : hFE(i) = 100-320(VCE=-2V, IC=-0.5A )

Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200

Contextual Info: 2SA1431 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STO RO BE FLASH APPLICATIO N S. M EDIUM POW ER AM PLIFIER A PPLICA TIO N S. • • High DC Current Gain and Excellent hpg Linearity : hFE(l) = 1°0~320(V cE = - 2V> I c = - 0 .5 A ) : hFE( 2 ) = 70(Min.) ( V c e = - 2 V , I c = - 4 A )

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018

Contextual Info: 2SA1433 Ordering number : ENN3471A 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF). Adoption of FBET process. Specifications

2SA1437

Abstract: ITR03622 ITR03623 ITR03624
Contextual Info: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made

2SA1435

Abstract: ITR03602 ITR03603 ITR03604 ITR03605 ITR03606
Contextual Info: 注文コード No. N 1 8 5 6 A 2SA1435 No. N1856A 30300 半導体ニューズ No.1856 とさしかえてください。 2SA1435 PNP エピタキシァルプレーナ形シリコントランジスタ 高 hFE, 低周波一般増幅用 用途 ・ 低周波一般増幅 , 各種ドライブ , ミューティング回路。

Vebo 15V

Abstract: 2SA1434 ITR03593 ITR03594 ITR03595 ITR03596 A 14U 9139KN
Contextual Info: 注文コード No.N 1 8 5 3 A 2SA1434 No. N1853A 20400 半導体ニューズ No.1853 とさしかえてください。 2SA1434 PNP エピタキシァルプレーナ形シリコントランジスタ 高 hFE, 低周波一般増幅用 用途 ・ 低周波一般増幅 , 各種ドライブ , ミューティング回路。

2SA1436

Abstract: ITR03612 ITR03613 ITR03614 ITR03615
Contextual Info: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .

A-1432

Abstract: 2SA1432
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V