D1194
Abstract: B884 25D11 L5A relay B884 ic 2SB884 2SD1194
Contextual Info: Ordering number: EN 1018E 2SB884/2SD1194 PNP/NPN Planar Silicon Darlington Transistors Driver A pplications A pplications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. F e a tu re s • High DC current gain. •High current capacity and wide ASO.
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en1018e2sb884/2sd11942sb884d1194+5b88425d11l5a relayb884 ic2sd1194
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2SB884
Abstract: 2SD1194
Contextual Info: SavantIC Semiconductor Product Specification 2SB884 Silicon PNP Power Transistor DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1194 APPLICATIONS ·For motor drivers,printer hammer
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2sb884o-220c2sd1194 |
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2SB1013
Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018
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2sb8842sb6792sb11052sb949+142sb12262sb14022sb949a2sb11312sa14312sb11172sb10132s8972sb13152sa13072sb13062sb631 hitachi2sb7471318j
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2SB884
Contextual Info: Ordering number:1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2010C [2SB884/2SD1194]
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1018e2sb884/2sd11942010co-220ab+2sc-462sb884
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2SB884
Abstract: 2SD1194
Contextual Info: SavantIC Semiconductor Product Specification 2SD1194 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB884 ·High DC current gain. ·High current capacity and wide ASO. ·Low saturation voltage ·DARLINGTON APPLICATIONS
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2sd1194o-2202sb884500ib1+1-500ib2
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2SB884
Abstract: 2SD1194 2SD884
Contextual Info: Ordering number:ENN1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2010C [2SB884/2SD1194]
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enn1018e2sb884/2sd11942010co-220ab+32sb8842sd11942sd884
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB557 TOSHIBA
Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601
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2sb5962sa16342sb5442sa496+142sb5622sa6832sb10352sa9342sa10692sb557 toshiba2sb1314toshiba 2sb5542sb546a2sa4832sb5542sb542sb5572sb857
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2SB897
Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te
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2sb8592sb8602sb8612sb862+122sb8632sb8552sb867-1320abj2sb8862sb8872sb8972sd1152sb8892sb8912sd11482sd1207
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2SB596
Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T
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2sb8242sb5962sb7032sb859+112sb9422sb13342sb942a2sb6862sb7732sb773a2sa12322sb 7732sb9652sa1283773a
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2SB1099
Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A
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2sa17062sb8802sb6762sb601+152sb9502sb13412sb8862sb6732sb11082sb13432sb10992sb615nec 2sb1099b6761086a10912s88342sb536 toshiba2sb613
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2SB1205
Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf
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tq220mlt0220mlt03pb2sb1205+32s811192sk2222sa128
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transistor 2SB618
Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2sa7332sj742sk1702sj76+82sk2132sj772sk2142sj1032sk2462sj109transistor 2sb6183a/fllnm 80
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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PA100
Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
Contextual Info: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9
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1cb012sd11352sd11362sd1137+102sd11382sd11402sd11452sd11472sd11482sd1176apa1002sd11762sd11592sb863
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2sc3145
Abstract: 2sd205
Contextual Info: SAfiYO D a r l i n g t o n T r a n s i s t o r s L a r g e - S i g n a l TR Darlington transistors can be driven with less power. Darlington transistor-applied circuits can be simplified and made small-sized, facilitating assembly of sets. Our Darlington transistors are available for lc=0. 7A(Smal1-Signal TR) to 15A and can be applied to various uses.
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tc-25tt0-220mf2sb884/2sd11942sb885/2sd1195+82sb886/2sd11962sb1226/2sd18282sb1227/2sd18292sb1228/2sd18302sb913/2sd12302sb887/2sd11972sc31452sd205
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JE 1692
Abstract: 2SB811 2SB1443 2SB1242 2SA1586 2SB1376 2SB1434 2SA1323 2SA1227 2SA1431
Contextual Info: - 38 - S! tt « Typ e No. 2SA 1681 « Manuf. % H ft SANYO n s TOSHIBA N EC tL HITACHI s d r iS F UJ ITSU «5 T MAT S U S H I T A 2 SA 1304 2SB1096 2SB928 2SA 1685 - = & 2SA1586 2SA1613 2SB1218A 2SA 1686 □ — A 2SA1015 2SAU75 2SA 1687 h 2SA 1688 = ft 2SA 1689
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2sb12292sb14102sa720a2sa1606+152sa13042sb10962sb9282sb11862sa15862sa1613je 16922sb8112sb14432sb12422sb13762sb14342sa13232sa12272sa1431
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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2SB884
Abstract: 2SD1194
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1500 Min @ IC= -1.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A
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2sd11942sb884 |
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2SB832
Abstract: 2sd1047 equivalent 2SB837 2SB843 2SD1077 2sb875 2SB803 2SB818 2sb895 2SB845
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB801 -45 -5 -1A 400 150 100 -2 -150 80* 26 2SB802 -60 -5 -1A
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2sb8012sb8022sb8032sb804+152sd10052sb8052sd10062sb8062sd1007902sb8072sb8322sd1047 equivalent2sb8372sb8432sd10772sb8752sb8182sb8952sb845
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