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    2SB1402 Search Results

    2SB1402 Datasheets (8)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SB1402
    		Hitachi Semiconductor Silicon PNP Triple Diffused Low Frequency Power Amplifier Original PDF 359.44KB 4
    2SB1402
    		Unknown The Transistor Manual (Japanese) 1993 Scan PDF 89.77KB 2
    2SB1402
    		Unknown Transistor Substitution Data Book 1993 Scan PDF 32KB 1
    2SB1402
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 122.14KB 1
    2SB1402
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.38KB 1
    2SB1402
    		Unknown Transistor Shortform Datasheet & Cross References Scan PDF 79.71KB 1
    2SB1402
    		Unknown Japanese Transistor Cross References (2S) Scan PDF 37.08KB 1
    2SB1402
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 71.83KB 1

    2SB1402 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1402

    Contextual Info: 2SB1402 Thermal resistance θj-c °C/W Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000


    Original     		2SB1402 2SB1402 PDF

    TO-220FA

    Abstract: 2SB1402
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1402 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications


    Original     		2SB1402 O-220Fa O-220Fa) -30mA -100V; TO-220FA 2SB1402 PDF

    Sabato

    Contextual Info: HITACHI 2SB1402-SWoon Pm TWptoDttluMd Absolute Maximum Ratings Ta = 25°C ttam Symbol Rating Unit Collector to bM * vottaQ* VCBO Collector to emitter voltage -120 V -"*20 V Emitter to base voltage VEBO >7 V Coltectof current lc -3 A Collector peak current


    OCR Scan     		2SB1402 O-220 2SB1402 Sabato PDF

    2sd1878

    Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
    Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö


    OCR Scan     		2SD2298 2SD2299 2SD2300 2SD2301 2SD2302 2SD2303 2SD2304 2SD2305 2SD2306 2SD2307 2sd1878 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431 PDF

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018


    OCR Scan     		2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679 PDF

    2SA1115

    Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
    Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225


    OCR Scan     		2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SB1024 2SB1430 2SA1115 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753 PDF

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 PDF

    2SB1402

    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications.


    Original     		-120V -30mA -100V; 2SB1402 PDF

    2SB1370

    Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
    Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40


    OCR Scan     		2SB1369 2SB1370 2SB1371 2SB1372 2SB1373 2SB1375 2SB1376 61393A 09K/0. 2SD2099 2SB1370 2sd2083 2sb1383 2SD2012 2SB1375 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 PDF