2SD222 Search Results

transistor smd marking BJ

Abstract: smd transistor bj smd marking BJ 2SD2226K
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SD2226K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 Low saturation voltage. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SD2226K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 Features 2 Low saturation voltage. +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB1470

Abstract: 2SD2222
Contextual Info: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

Contextual Info: Power Transistors 2SD2221 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1469 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000

marking Yk

Abstract: 2SD2228 T460 T540 X108 ST540
Contextual Info: ~r —S 7 • S/— h NEC S ilic o n T ra n s is to r Ì? f/ \ f7 2SD2228 n p n jl tf 2 S D 2 2 2 8 ÌÌ, t v ^ KM ^ f ï : mm • ^ - y ' r — i S X 'm ? V ÿ * î& V c E u a t , * m m L t , 7 J3 «t h^ l tz l V t . i 2.1 ± 0 .1 ^ - y K" 7 t > • X f

2SD2226K

Abstract: 2SD2351 VEBO-12V
Contextual Info: h 7 >vZ. £ /Transistors 2SD2226K/2SD2351 2SD 2226K 2SD2351 x e $ * y 7 J l ' 7 U - ? B N P N y ,j 3 > b 7 > v Z $ Epitaxial Planar NPN Silicon Transistor —flS 'h it^ iB ig ffl/G e n e ra l Small Signal Amp. * ^ ^ J i & B I / D i m e n s i o n s Unit : mm

Contextual Info: 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !External dimensions (Units : mm) !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage.

2SD2225

Contextual Info: Transistors 2SD2225 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • High collector-emitter voltage (Base open) VCEO of 120 V • Optimum for low-frequency driver amplification • Allowing supply with the radial taping

2SB1470

Abstract: 2SD2222 IC7A TO-3PL
Contextual Info: Inchange Semiconductor Product Specification 2SB1470 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

74645

Abstract: 2SD2227S
Contextual Info: SPICE PARAMETER 2SD2227S by ROHM TR Div. * 2SD2227S NPN BJT model * Date: 2006/12/04 .MODEL 2SD2227S NPN + IS=400.00E-15 + BF=1.3544E3 + VAF=69.931 + IKF=.16193 + ISE=400.02E-15 + NE=1.6742 + BR=9.6205 + VAR=100 + IKR=1.1285 + ISC=725.25E-15 + NC=2.0260

vmt3

Contextual Info: 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V)

2SD2220

Contextual Info: Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit: mm ● ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward

2SB1470

Abstract: 2SD2222
Contextual Info: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB1473

Abstract: 2SD2225
Contextual Info: Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification.

2SD2171

Contextual Info: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors Medium Power Transistor 25V, 1.2A I 2SD2537 /2SD2171S •Features 1) 2) 3) •Absolute maximum ratings (Ta=25'C ) High O C current gain. High emitter-base voltage. (V c b o = LowVcEttM). (Max.

2SB1471

Abstract: 2SD2223
Contextual Info: Ordering num ber: EN 3365 r 2SB1471/2SD2223 No.3365 PN P/N PN E pitaxial P la n ar Silicon T ransistors Driver Applications A p p lic a tio n s • Motor drivers, prin ter ham m er drivers, relay drivers,voltage regulator control F e a tu re s •Suitable for sets whose height is restricted

2SB1469

Abstract: 2SD2221
Contextual Info: Power Transistors 2SD2221 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1469 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000

2SB1472

Abstract: 2SD2224
Contextual Info: Ordering number:EN3366 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1472/2SD2224 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2049B [2SB1472/2SD2224] Features

d215

Abstract: 2SD2226K 2SD2227S 2SD2351 2SD2537 2SD2227 94S-374-D215 d212
Contextual Info: Transistors 2SD2537 2SD2351 / 2SD2226K / 2SD2227S 94L-1061-D212 (94S–374-D215) 322

2SB1470

Abstract: 2SD2222
Contextual Info: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160

2SD2220

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 ue pl d in

2SB1471

Contextual Info: Ordering number:EN3365 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1471/2SD2223 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2049B [2SB1471/2SD2223] Features

Contextual Info: Transistors IC SMD Type Product specification 2SD2228 Features High dc current. Low collector saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage