2N3960
Abstract: 2N3959 motorola 2N3960 to-18 MOTOROLA til 31a a406 to-72 rf
Contextual Info: MOTOROLA SC XSTRS/R 4bE D F b3b?2SM 0 0 ^ 4 0 4 1 7 MOTOROLA 7 ^ 3 /-/^ SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The R F Line 1.8 GHz — 10 mAdc HIGH FREQUENCY TRANSISTORS NPN SIUCON NPN SILICON HIGH-FREQUENCY TRANSISTORS . . . designed fo r high-speed current-m ode logic switching applications.
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2n39592n39602n39s9motorola 2n3960+3to-18 motorolatil 31aa406 to-72 rf
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2N3960
Abstract: motorola 3960 2n3959
Contextual Info: MOTOROLA SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The RF Line 1.8 GHz - 10 mAdc HIGH FREQUENCY TRANSISTO RS NPN SILICON NPN SILICON HIG H-FREQUENCY TRANSISTORS . . designed fo r high speed c u rre n t m ode logic s w itc h in g app lic a tio n s . H ig h C u rre n t-G a in —B a n d w id th P ro d u c t f j = 180 0 M H z T y p @ I q ^ 10 m A d c
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2n39592n3960motorola 3960 |
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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MRF965
Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17a-0105a-01gain-200mrf502+15bfx89bfy902n51792n2857mrf904mrf914mrf9652n5109 motorolamotorola 2n5179high gain pnp rf transistorbfy90 motorolamrf5862n6603 transistormrf542rf 2n3866
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2N5109 motorola
Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro
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17a-0105a-01mrf536mrf2369+14mrf57144a-012n5947mrf5112n6603mrf9622n5109 motorolabfr90 applicationmrf931mrf586244a-01mrf961mrf5172n5943
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2N5109 motorola
Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf58744a-01+162n39592n39602n5835mm4049mrf9142n59432n5109 motorolabfy90 motorola2n5583mrf965bfr91 motorolamrf586motorola 2n51792n4427 motorolamacro-x ceramic2n3866a
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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bcy59 equivalent
Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943
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2n943t0-182n20042n2333+162n29442n29452n2945a2n29462n2946a52n329abcy59 equivalentbc140 equivalent2n3913bcy95bc140-102n3019 equivalent2n27082n328abc109c npnbcy22
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900 mhz oscillator using bfr91 transistor
Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf559mrf581+16mrf837mrf8372mrf838/a305a-01mrf557317d-01900 mhz oscillator using bfr91 transistormrf648uhf amplifier design bfr90motorola transistors mrf646motorola transistors mrf648motorola transistors mrf630case 317-01mrf2369mrf586motorola mrf237
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TIC 115
Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30
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2n39592n3960trf641trf646+14trf648trf453trf453atrf455trf455atrf454tic 115bd117to-53hse2000ss20172n396tic 115 dbd112
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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317A-01
Abstract: 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued CATV, MATV, and Class A Linear Transistors The devices listed below are excellent for Class A linear C A TV/M ATV applications and are listed according to increasing gainbandwidth (fj) . More information concerning the device for your specific linear design needs can be obtained through your local
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mrf501mrf5022n5179bfy90+16bfx89mrf58744a-012n39592n39602n5835317a-012n5583mrf9652n5109 motorola2n5943244a-01mrf962mrf586bfr90 applicationbfr91
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D40V2
Abstract: BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken
Contextual Info: POWER SILICON NPN Item Number Part Number I C -5 -10 15 25 30 35 40 45 - 50 55 60 65 70 -75 • 80 85 · 90 95 - 868 Ic Max Y(BR)CEO (A) (V) hFE Min Max fT ICBO Max t, Max PD Toper Max Max Max (Hz) (A) (8) (a) (W) (OC) 400 400 1.0 1.0 1.0 1.2 2.0 1.0 2.0 1.0
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202abo-202abt0-202ab205ao+13220ab237var202vard40v2bf469skt940a2sc4030d40n5bf881bf109bf883skt940b140 telefunken
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2n5835
Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17a-0105a-01gain-200mrf502+15bfx89bfy902n51792n2857mrf904mrf9142n58352n4957mrf502 transistormrf542rf power package selection guidemrf965low noise transistor crossmotorola 2n38662n5160
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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ls 2027 audio ampecg transistor replacement guide book free2sb337transistor replacement guide+6980510s95102sb508c248507722n339bc149c
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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