2N3763 Search Results

150M

Abstract: 2N3763
Contextual Info: 2N3763 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N3763L

Contextual Info: Data Sheet No. 2N3763L Generic Part Number: 2N3763L Type 2N3763L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.

2N3763

Contextual Info: Data Sheet No. 2N3763 Generic Part Number: 2N3763 Type 2N3763 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using

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60N60

Contextual Info: 2N3763 Chip: 5.0V; 1.5A; geometry 6706; polarity PNP 7.50 Transistors . 1 of 2 Home Part Number: 2N3763 Online Store 2N3763 Diodes C hip: 5 .0 V; 1 .5 A; geo m et ry 6 7 0 6 ; po larit y PNP Transistors

Contextual Info: 2N3763+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3763+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3806 2N3906

Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
Contextual Info: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^

Contextual Info: 2N3763 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

Contextual Info: SEMICONDUCTOR • ■ m h h h b m h b h h h m m » —« — TECHNICAL DATA 2N3762 2N3763 2N3764 2N3765 CRYSTAIONCS 2805 Veterans Highway o N P , ? c iC O n , T - , Small-Signal Transistors Roilkonkoma, N.Y. ,1770 designed lor general-purpose switching applications

2N3762

Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N3762

Abstract: TO206AB 2N3763S
Contextual Info: TECHNICAL DATA 2N3762, 2N3762L JAN, JTX, JTXV 2N3763, 2N3763L JAN, JTX, JTXV 2N3764 JAN, JTX, JTXV 2N3765 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/396 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3762, L 2N3764 2N3763, L

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6006 FAX: (973) 376-8960 U.SA 2N3763 2N3763 Polarity PNP Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-39 case. • Also available in chip form using

2N3467

Abstract: 2n3762 chip type geometry 2N37
Contextual Info: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance

2N3762

Abstract: 2N3763 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D I b 3b7a5M 00ab3t,7 fl | T - 3 7 -/ r M A X IM U M R A T IN G S Sym bol 2N3762 2N3764 2N3763 2N3765 Coliector-E m itter V olta g e V C EO 40 60 Vdc Collector-B ase V oltag e V cB O 40 60 Vdc Em itter-Base V oltag e vebo 5.0 Vdc ic

Contextual Info: 2N3763 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N3762

Abstract: 2N3763
Contextual Info: DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS TA=25°C Collector-Base Voltage

Contextual Info: 2N3763+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3763S

Contextual Info: 2N3763S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

buv48 equivalent

Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

2N5146

Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts