MM3735 Search Results

mt 1389 de

Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B

MM3735

Abstract: 2N3734 2N3735 MM3734
Contextual Info: MM3734 silicon MM3735 NPN S IL IC O N C O R E D R IV E R T R A N S IS T O R S NPN S IL IC O N A N N U L A R C O R E D R IV E R T R A N S IS T O R S . designed for use in core driver applications and high speed, high* current switching applications. • Collector-Em itter Breakdown Voltage B V c E O = 30 Vdc <Min> “ MM3734

NS 8002 1151

Abstract: MM3735 TO213AA MAX3886
Contextual Info: b3b?2S4 OOTSSDl S • f l O T b , ^ ^ / 4bE D MO TO R O L A SC X ST R S / R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3735 MM3737 DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistors Suffixes: //#//// H, HX, HXV Processed per MIL-S-19500/395B

buv48 equivalent

Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

BUT34

Abstract: 2N3763 MOTOROLA BUT34 equivalent MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 MM3735
Contextual Info: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

BUT34 equivalent

Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistor BUX 48

Abstract: 1N4934 2N3763 2N6339 2N6438 BUX48 BUX48A MM3735 MR854 transistor bux 48a
Contextual Info: MOTOROLA Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

mje13009 equivalent

Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

MR854 diode

Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2n3252

Abstract: 2N5859 transistor 2N5859 2N3725 MOTOROLA 2n3736 2N3724 2N5845 2n3444 SILICON SMALL-SIGNAL DICE 2n5861
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE | b3t,7SSS □ □ B 7 T ö ci T f DIO DES/O PTO 34C D 37989 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C3724 DIE NO. — NPN LINE SOURCE — DSL27 D Ol This die provides performance similar to that of the following device types:

MJ2955 replacement

Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power

Contextual Info: BUX48 SWITCHMODEt II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line−operated SWITCHMODE applications such as:

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BUX 84 circuits

Abstract: BUX48 BUX48A application transistor BUX 48 1N4934 2N3763 2N6339 2N6438 BUX48A MM3735
Contextual Info: ON Semiconductort BUX48 BUX48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated

buv48 equivalent

Abstract: 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854
Contextual Info: ON Semiconductort BUV48 BUV48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated

tektronix 475

Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854 Semiconductor Components Industries
Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The BUT33 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

transistor bux 48a

Abstract: BUX48A application 1N4934 2N3763 2N6339 2N6438 BUX48 BUX48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

buv48 equivalent

Abstract: BUV48-D BUV48 BUV48 Applications 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

MTH13N50

Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity: