IN916
Abstract: MM3736 MM3737
Contextual Info: Mil/13736, MM3737 NPN SILICON ANNULAR SILICON MEMORY DRIVER NPN SILICON MEMORY DRIVER TRANSISTOR . . . designed for 1 Am pere, high-speed switching applications such as ferrite core memory and hammer drivers. • Collector-Em itter Breakdown Voltage —
|
OCR Scan
|
mm3736mm373710madctj-25+1in916
|
PDF
|
mt 1389 de
Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B
|
OCR Scan
|
3b72s4mm3735mm3737mil-s-19500/395b+8o-116mt 1389 demt 1389 de icns 8002 1151mt 1389 de motorola2n37372n3735to-206ab
|
PDF
|
NS 8002 1151
Abstract: MM3735 TO213AA MAX3886
Contextual Info: b3b?2S4 OOTSSDl S • f l O T b , ^ ^ / 4bE D MO TO R O L A SC X ST R S / R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3735 MM3737 DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistors Suffixes: //#//// H, HX, HXV Processed per MIL-S-19500/395B
|
OCR Scan
|
mm3735mm3737mil-s-19500/395buni500+4o-116ns 8002 1151to213aamax3886
|
PDF
|
powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
|
OCR Scan
|
111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
|
PDF
|
tlp 501
Abstract: MM4036 TIP NPN MM3736 MM4030 MM4031 MM4032 MM4033 MM5189 MM5262
Contextual Info: SEMICONDUCTOR SEMICONDUCTOR TECHNDLOUY, INU. TECHNOLOGY DSE M E D IU M A N D HIGH POW ER STI Type Polarity Power Dissipation . @25°C watts VCE(SAT.) @ lc hF E @ lc Ti re» VCEV (volts) vCEO (volts) (Min.) (Max.) fll3t,45fl □ □ □ 0 2 4 ‘i § 3131 S.E. Jay Street
|
OCR Scan
|
mm3736m3737mm4030mm4031+9mm4032mm4033m4036mm5189mm5262svt60-5tlp 501mm4036tip npn
|
PDF
|
aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
|
OCR Scan
|
11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
|
PDF
|
2n3252
Abstract: 2N5859 transistor 2N5859 2N3725 MOTOROLA 2n3736 2N3724 2N5845 2n3444 SILICON SMALL-SIGNAL DICE 2n5861
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE | b3t,7SSS □ □ B 7 T ö ci T f DIO DES/O PTO 34C D 37989 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C3724 DIE NO. — NPN LINE SOURCE — DSL27 D Ol This die provides performance similar to that of the following device types:
|
OCR Scan
|
dsl272c37242n24102n2476+132n25372n25382n32522n32532n34442n37242n5859transistor 2n58592n3725 motorola2n37362n5845silicon small-signal dice2n5861
|
PDF
|
B0813
Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301
|
Original
|
2sc109s2ns71492pu012s0180s+14mpsu01nsou0192gu01na31kyb0813pt97878c440mj3237trw pt9787mm4048mje42cmj2841 motorolamm1758mmt2857
|
PDF
|
MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
|
OCR Scan
|
mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
|
PDF
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
|
OCR Scan
|
4l30524l3056wiring diagram audio amplifier ic 6283germanium+8transistor shortform datasheet & cross referenceshalbleiter index transistor2n5160 motorolatransistor itt 29071n51592n 5574inverter welder 4 schematicdiagrams de ic lg 8838
|
PDF
|
MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
|
Original
|
mje8502ao-220ab/to-220mjf16010ao-254+12mjf16018mjf16206mth13n50mtm565mrf531mm3220mm1758mm3904mm3004mth5n100mtm26n40emth7n50
|
PDF
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
|
PDF
|
b0845
Abstract: B0847 KT922V S01135 MM3724 KT922B SOt123 Package 2N444 2SC2238BO JE8550
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Inti Device ToshibaCorp Inti Device ToshibaCorp ToshibaCorp ToshibaCorp Hitachi Ltd Matsushita Elec Trans Sanyo Elect ~~~~~~ ~anyo ~Iect B0226 B0228 B0230 B0230 B0230 2SC234 JE9113A JE9113B
|
Original
|
ioc3298b2sc3238bioc2238b2sc2238bo+142sc2238by2sc3298b2sc1516k2sc19132sc3902b0845b0847kt922vs01135mm3724kt922bsot123 package2n444je8550
|
PDF
|
