1N445 Search Results

1n4454

Contextual Info: 1N4454 SILICON SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version LL4454 B A A C D Mechanical Data • • • • • DO-35 Case: DO-35, Plastic

1N4830

Abstract: mpd200
Contextual Info: DIGITRON SEMICONDUCTORS 1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179 MPD100 – MPD400A STABISTORS TIGHT TOLERANCE Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA if surge 1.0 4.0 A Power dissipation

Contextual Info: Discrete POWER & Signal Technologies t _8 i iHAfrltAif Ï ¡p^j. ;S £~!M i O D N P U C ' T O R 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Maximum RâtinÇJS T A = 2 5 ° C unless o th e rw ise noted

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4454

Abstract: LL4454
Contextual Info: 1N4454 SILICON SWITCHING DIODE Features • · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version LL4454 B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202,

1N4454UR-1

Abstract: BKC Semiconductors
Contextual Info: MINI-MELF-SMD Applications 1 LL44S4 or 1N4454UR-1 Silicon Switching Diode 1N4454UR-1 / LL4454 Used in general purpose applications, where performance, space and switching speed are important. LL-34/35 MINI-MELF SMD Package DO-213AA (nominal dimensions)

Contextual Info: 1N4458+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)150Ï V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)150Ï

IN3064

Abstract: in4454 1N4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
Contextual Info: COMPUTER D ODE JAN &JANTX1N3064 4454; JAN, JANTX & JANTXV 1N4454 ja n , j a n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 V s V S IV iru I u rv U I \ J U C. in General Purpose Switch¡ng ABSOLUTE MAXIMUM RATINGS, AT 25°C FEATURES R e v e rse B re a k d o w n V o ltag e .7 5 V

1N4454

Abstract: MMBD1201-1205 ULTRA FAST DIODE
Contextual Info: 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 50 V IO Average Rectified Current

in4454

Abstract: IN4454-1 1N4454 1N4454-1 D0-35 Case D0-35
Contextual Info: • 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 1N4454 1N4454-1 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -55°C to +175°C Storage Temperature: -55°C to +175°C

1N4454UR-1

Abstract: 4026 datasheet 4026 DO-213AA
Contextual Info: MINI-MELF-SMD Applications 1N4454UR-1 Used in general purpose applications, where performance, space and switching speed are important. Silicon Switching Diode LL-34/35 MINI MELF Surface Mount Package DO-213AA Features Six sigma quality Metallurgically bonded

Contextual Info: LL4454 or 1N4454UR-1 M INI-M ELF-SMD Applications ID Silicon Switching Diode Used in general purpose applications, where performance, space and switching speed are important. 1N4454UR-1 / LL4454 LL-34/35 MINI-MELF SMD Package DO-213AA (nominal dimensions)

1N4454

Contextual Info: B IE M ÌC O N P U C T O R :>> 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum RâtiriÇJS T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value Units w lv Working Inverse Voltage

1N4450

Abstract: DO-204AH
Contextual Info: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

1N4454

Contextual Info: 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4454 Online Store 1N4454 Diodes Small Signal Switching Diode. Peak Reverse Voltage VRM Transistors = 75 V. Maximum Average Rectified Current IAV = 150 MA.

1N4454A

Abstract: 1N4454
Contextual Info: 1N4454 SILICON SWITCHING DIODE Features • · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version LL4454 B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202,

MT3018

Abstract: MT3013 MT3017 MT3019
Contextual Info: Stabistor Diodes Part Number MZ2360 MZ2361 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD400 MPD400A MPD100 MPD200 MPD300 MPD100A MPD200A MPD300A MT3010 MT3011 MT3012 MT3013 MT3014 MT3015 MT3016 MT3017 MT3018 MT3019 MT3020 MT3021 Microsemi Division Scottsdale

hp 5082 step recovery

Abstract: HP STEP RECOVERY DIODES MIL-STD-750 METHOD 2036 608C 1N4456 5082-1001 5082-1006 5082-1002 FSJ 1002 HP 5082-1006
Contextual Info: HEW LETT-PACKARD/ CflPNTS blE D • 44475Ô4 □ □ 0 tì t . 3 B TT3 H i HP A U p \ HEWLETT v PACKARD High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 1N4456 Features • Fast Switching • Low Capacitance • High Current Capability

1N4454

Contextual Info: 1N4454 SILICON SWITCHING DIODE Features • • • • High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version LL4454 T D Mechanical Data_ DO-35 Case: D O -35, Plastic Leads: Solderable per M IL-STD-202,

DIODE 1N649

Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Contextual Info: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V

Contextual Info: 1N445B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current750m @Temp (øC) (Test Condition)30’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition).75 @Temp. (øC) (Test Condition)25’