1N359 Search Results

1n35

Abstract: Fairchild 1N3595
Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200

1N6099

Abstract: 1N3595
Contextual Info: B K C INTERNA TIO NA L D 3 E: D I 11711â3 0000274 0 HIGH CONDUCTANCE LOW LEAKAGE DIODES T -ô h ô f 1N3595 1N6099 ABSOLUTE MAXIMUM RATINGS • Bv • VF 150 V MIN @ 100 (iA 1.0 V @ 200 mA Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range

diode 1N3595us-1

Abstract: 1N3595US 1N3595US-1 1N3595 D-5D 1N3595 1N3595-1
Contextual Info: 1N3595-1 1N3595US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. - SJ SX SV SWITCHING DIODE 1N3595-1, 1N3595US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D

1n457a equivalent

Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
Contextual Info: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR

diode t25 4 fo

Contextual Info: 1N3595 / Microsemi Corp. $ The diode experts SANTA ANA, CA SCOTTSDALE, AZ For more information call: 714 979-8220 GENERAL PURPOSE DIODES FEA TU R ES • NIGH CONDUCTANCE • EXTREM ELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +I50°C • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE

MMBD1502A

Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
Contextual Info: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200

1N3595

Abstract: AM-08
Contextual Info: L ALLEGRO M ICROSYSTEM S INC □S0433Ö 0 GD 3 7 Û Ô 3 • ALGR T-91-Û1 PROCESS TRR Process TRR Medium-Speed Switching Diode Process TRR is a non-gold-doped silicon epitaxial diode designed to 1N3595 specifications and used in medium-speed switching applications.

Contextual Info: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0

LL3595

Abstract: MIL-PRF-19500/241 1N3595UR-1 DO-213AA
Contextual Info: FEATURES 1N3595UR-1 • 1N3595UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/241 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3595, & MLL3595 MAXIMUM RATINGS AT 25 °C

Contextual Info: 1N3597 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current275m V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)400m

Contextual Info: 1N3599 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

Contextual Info: 1N359 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150m @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition).20 @Temp. (øC) (Test Condition)25#

IN3595

Abstract: 1N3595
Contextual Info: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V

DSAIH0002537

Contextual Info: B K C INTERNATIONAL □ 3E D I 1 1 7 ^ 0 3 □□□□274 D j p HIGH CONDUCTANCE LOW LEAKAGE DIODES T -ô h ô f 1N3595 1N6099 ABSOLUTE MAXIMUM RATINGS • Bv • Vp 150 V MIN @ 100 (iA 1.0 V @ 200 mA Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N3595 The 1N3595 is a high conductance extremely low leakage planar diode. Specified maximum values for voltage drop capacitance and leakage current mean flexibility in designing circuits which require large numbers of diodes. In those applications where reverse current is a critical design

DO-35 PACKAGE

Abstract: Fairchild 1N3595 1n6099
Contextual Info: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance

Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

IN3595

Abstract: jedec package TO-236AA IN6099 J029 ll3595 1N3595 1N6099 FDLL3595 FDLL6099 TO-236AA
Contextual Info: i 3 p a ir c h ild • £ £ £ £ !£ A Schlumberger Compan' 1 N3 5 9 5 / 6 0 9 9 FDLL3 5 9 5 / 6 0 9 9 H ig h C o n d u c ta n c e LOW Leakage Diodes • B V . . 1 5 a v M IN @ 100 fiA PACKAGES • VF 1N3595 1N6099 FDLL3595 FDLL6099 1 . 0 V @ 200 mA ABSOLUTE MAXIMUM RATINGS (Note 1)

1N3595

Abstract: Fairchild 1N3595
Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

LL3595

Abstract: 1N3595 1N3595-1 1N3595UR-1 DO-213AA
Contextual Info: Low Leakage Diode Applications 1N3595 DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package nominal dimensions Six sigma quality Metallurgically bonded glass 0.020"

Contextual Info: MINI-MELF-SMD LL3595 or 1N3595UR-1 Applications r Low Leakage Diode 1N3595UR-1 / LL3595 Used in instrumentation applications, where space, low leakage and high ' voltage isolation are important. LL-34/35 MINI-MELF Features • • • • • • • SMD Package DO-213AA

IC 7447 A

Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
Contextual Info: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 1N3595-1 1N3595US-1 1N3595-1 1N3595-1 1N3595U 1N3595JANTXV1N3595 1N5194

1N3595

Contextual Info: INTERNATIONAL SEMICONDUCTOR, INC. 1N3595 GENERAL PURPOSE DIODE FEATURES :o H e r m e tic a lly S e a le d D o u b le P lu g c o n s t r u c tio n H ig h C o n d u c t a n c e .0 6 8 /.0 7 3 E x tre m e ly L o w R everse C u rr e n t 1 .7 5 /1 .9 5 T u ltr a -s ta b le O p e r a t io n u p To 150° c