1N35 Search Results

1n35

Abstract: Fairchild 1N3595
Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200

5 volts ZENER DIODE

Abstract: 1N3506A 1N3507A 1N3508A 1N3509A 1N3510A 1N3511A 1N3512A 1N3513A 1N3514A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01844 1-800-446-1158 / 978 794-1666 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 400mW ZENER VOLTAGE REGULATOR DIODE DEVICES 1N3506A through 1N3534A MAXIMUM RATING AT 25oC Junction and Storage Temperature: -65°C to +175°C

1N35

Abstract: DSAIH0002567
Contextual Info: B K C INTERNATIONAL D3E D | 1 1 7 ^ 3 0GGGD53 b f -7 _Type No. 1N35 _ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 Tele Fax (617) 681-9135

Contextual Info: 1N3584 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.7 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.25 Temp Coef pp/10k.05 Maximum Operating Temp (øC)75 Package StyleAxial-D

Contextual Info: 1N3587 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)520 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N3572 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.5 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.35 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.5 @Temp. (øC) (Test Condition)85#

Contextual Info: 1N3581 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.7 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.25 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175 Package StyleAxial-D

Contextual Info: 1N3574 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.5 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.35 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.5 @Temp. (øC) (Test Condition)85#

Contextual Info: TYPES 1N3506 THRU 1N3530 SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN N O . D L -S 7 3 1 1 9 4 5 , M A R C H 1 9 7 3 V z . . . 3.3 V to 33 V , mechanical data Pd . . . 400 mW • 5% Tolerance • Rugged Double-Plug Construction These voltage regulator diodes have been designed using the best o f both silicon m aterial processing and packaging

1N3507A

Abstract: 1N3512 1N3506A 1N3508A 1N3509A 1N3510A 1N3511A 1N3512A 1N3513A 1N3514A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01844 1-800-446-1158 / 978 794-1666 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ZENER VOLTAGE REGULATOR DIODE DEVICES 1N3506A through 1N3534A ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

IN3595

Abstract: 1N3595
Contextual Info: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V

Contextual Info: 1N358R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq12G Frequency Min. (Hz)1G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit15 @Power Level (test) (W)

LL3595

Abstract: BKC Semiconductors
Contextual Info: MINI-MELF-SMD 1 Low Leakage Diode LL3595 1 Ì1N 3595U R -1 Applications 1N3595UR-1 / LL3595 Used in instrumentation applications, where space, low leakage and high' voltage isolation are important. LL-34/35 MINI-M ELF Features • • • • • • • SMD Package DO-213AA

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N3595 The 1N3595 is a high conductance extremely low leakage planar diode. Specified maximum values for voltage drop capacitance and leakage current mean flexibility in designing circuits which require large numbers of diodes. In those applications where reverse current is a critical design

DO-35 PACKAGE

Abstract: Fairchild 1N3595 1n6099
Contextual Info: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance

Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

1N3595

Abstract: Fairchild 1N3595
Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

n352

Abstract: 1N3507 TDDD37
Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N3506 thru 1N3530D 400 M ILLIW ATT H E R M E T IC A L L Y S E A L E D G L A S S S IL IC O N Z E N E R D IO D ES ELECTRICAL CH A RA CTERISTICS @ 25 C, unless otherwise specified r JEDEC TYPE NUMBER

a33 smd diode

Abstract: smd diode a33 BKC Semiconductors smd a33 BKC diode do35 DSAIH0002559 LL3595 Bkc SMD
Contextual Info: Low Leakage Diode 1N3595 Applications I DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. DO-35 Glass Package Features • • • • • • nominal dimensions Six sigma quality Metallurgical^ bonded

Contextual Info: 1N3583 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.7 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.25 Temp Coef pp/10k.10 Maximum Operating Temp (øC)75 Package StyleAxial-D

Contextual Info: 1N3590 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)520 @Temp. (øC) (Test Condition)25#

Contextual Info: J.S.IIE.U - Conductor CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N35 GOLD BONDED GERMANIUM DIODE FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

Contextual Info: / . j 1N3595 Micro/semi Corp. / [☆JANS* $ Tnp diode experts SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C