1N3530 Search Results

Contextual Info: TYPES 1N3506 THRU 1N3530 SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN N O . D L -S 7 3 1 1 9 4 5 , M A R C H 1 9 7 3 V z . . . 3.3 V to 33 V , mechanical data Pd . . . 400 mW • 5% Tolerance • Rugged Double-Plug Construction These voltage regulator diodes have been designed using the best o f both silicon m aterial processing and packaging

1N350

Abstract: 1N3506 1N3507 1N3508 1N3509 1N3510 1N3511 1N3512 1N3513 1N3530
Contextual Info: 44962ÜÜ "HÏTACHl7 0H UhLtClKUNHJ5; 1 -A Z H _ Q 2 37 DE 7s n 44^205 400mUU Zener Dio>o<v o i 1N350Ó thru 1N3530 -r-Z /. r-sO ooaaass G€N€RRL DCSCRIPTION The Hitachi 400m W ZENER DIODE series 1N3506THRU 1N3530 are especially designed for stabilized power

diodas

Contextual Info: lanar Diodas POWER Continued 400 mW 250 mW CASE DO-35 ZENER VOLTAGE LOW NOISE LOW LEVEL 25 1N4117 1N4710 27 1N4118 1N4711 28 1N4119 1N4712 % 1N4120 1N4713 33 1N4121 1N4714 1N3530 36 39 1N4122 1N4715 1N3531 1N4123 1N4716 1N3532 43 1N4124 1N4717 1N3533 47

n352

Abstract: 1N3507 TDDD37
Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N3506 thru 1N3530D 400 M ILLIW ATT H E R M E T IC A L L Y S E A L E D G L A S S S IL IC O N Z E N E R D IO D ES ELECTRICAL CH A RA CTERISTICS @ 25 C, unless otherwise specified r JEDEC TYPE NUMBER

Contextual Info: Zener Diodes POWER Continued 400 mW 250 mW CASE DO-35 ZENER VOLTAGE LOW NOISE LOW LEVEL 25 1N4117 1N4710 27 1N411B 1N4711 28 1N4119 1N4712 30 1N4120 1N4713 1N3529 33 1N4121 1N4714 1N3530 36 1N4122 1N4715 1N3531 1N3532 LOW LEVEL 39 1N4123 1N4716 43 1N4124

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

5 volts ZENER DIODE

Abstract: 1N3506A 1N3507A 1N3508A 1N3509A 1N3510A 1N3511A 1N3512A 1N3513A 1N3514A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01844 1-800-446-1158 / 978 794-1666 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 400mW ZENER VOLTAGE REGULATOR DIODE DEVICES 1N3506A through 1N3534A MAXIMUM RATING AT 25oC Junction and Storage Temperature: -65°C to +175°C

N413

Abstract: 1N4713 1n4716 1N3528 1N3529 1N4117 1N4119 1N411B 1N4120 1N4710
Contextual Info: zen er Diodes POWER Continued 250 mW 400 mW CASE DO-35 ZENER VOLTAGE LOW NOISE LOW LEVEL 25 1N4117 1N411B 1N4119 1N4120 1N4121 1N4122 1N4123 1N4124 1N4125 1N4126 1N4127 1N4128* 1N4129* 1N4130* 1N4131* 1N4132* 1N4133* 1N4134* 1N4135* 27 28 30 33 36 39 43

BZY85C12

Abstract: BZY85C bzy85c24 BZY83C7V5 BZY85C9V1 BZY83 BZY-83C15 bzy85 BZY83C15 BZY85C10
Contextual Info: ~B3 • fenwal electron Ic s /a p d DE § 3 S m S t . 3 - ? 3? OQDCnDS 3 00905 D f Y- I f-<*7 ZENER DIODES DO-35 Case DO-35 Case Z50mW N om inal Z a n er V oltag e V z @ Izr V Typet BZY83C6V8 BZY83C7V5 BZY83C8V2 B ZY 8 3 C 9 V 1 BZY83C10 BZY83D10 BZY 8 3 C 1 1

1N5739

Contextual Info: ZENER DIODES 250mW cont. Part# Nominal Zener Voltage V (V) Z Test Current Maximum Dynamic Impedance l (mA) Z Z T IZT CT Typical Temperature Coefficient T C (WC) 1N3506 3.3 20 24 -.070 1N3507 3.6 20 22 -.065 1N3508 3.9 20 20 -.060 1N3509 4.3 20 18 -.055

BA 5408

Abstract: JANTX1N974B-1
Contextual Info: Zener Regulator Diodes Scottsdale ' Package Outline ; D O-213AA Type SM Scottsdale DO-7 STD Scottsdale DO-35 STD SM I ' Power! Vz Mil Data Spec Sheet ID W , (V) 117 : izt (mA) (n ) 1 Zzk (£1! VR (V> (+/-%) 22.8 5 5 8301 0.4 30 4.2 49 1000 10096 0.4 30 4.2

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Z82D5

Abstract: "Zener Diodes" 1n5048 1N5008 1N4189 1N4730 zener 1N4653 1N4671 1n4849 1N5012 1N4171
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Pow er E arly In d u stry S ta n d a rd E arly In d u stry S ta n d a rd L o w N o ise L o w C u rre n t M il - S p e c L o w C u rre n t 50 u A Low Leakage L o w N o is e L o w C u rre n t M il - S p e c In d u stry

1N3507A

Abstract: 1N3512 1N3506A 1N3508A 1N3509A 1N3510A 1N3511A 1N3512A 1N3513A 1N3514A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01844 1-800-446-1158 / 978 794-1666 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ZENER VOLTAGE REGULATOR DIODE DEVICES 1N3506A through 1N3534A ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

BZY83

Abstract: bzy85 BZY85C BZY85C20 BZY85C18 BZY85-C12 BZY85C22 BZY83C10 BZY83C20 BZY85C6V8
Contextual Info: AMERICAN POWER DEVICES 23E D • 0737135 OODOOOfl 4 ■ ZENER DIODES LZ. . —— .X ITT DO-35 Case r 250mW Typet - o ? DO-35 Case Nominal Zener Voltage Vz @ Izi V Test Current Izr mA Maximum^ Dynamic Impedance Zzr @ Izi O 8 6 7 10 Typtcal Temperature Coefficlent

1N4465

Abstract: 1N4189B 1N4705 1N5988B 1N6006B 1N4477 1N4460 1N5994B 1N4471 1N5995B
Contextual Info: zener Diodes POWER 400 mW 250 mW y ? DO-35 CASE LOW NOISE LOW LEVEL LOW LEVEL 1.8 1N4614 1N4678 2.0 1N4615 1N4679 2.2 1N4616 1N4680 2.4 1N4617 1N4681 ZENER VOLTAGE 2.7 GENERAL PURPOSE 1N702A 3.0 3.3 3.6 1N703A 3.9 4.3 1N704A 4.7 5.1 1N705A 5.6 6.0 1N706A LOW

Contextual Info: LOW VOLTAGE AVALANCHE ZENER DIODES LVA 400m W Pa rt# Nom inal Zene r Voltage Test Current Maximum Zener Impedence M axim um Reverse Current v z @ iCT lz (mA) Zzr@lzr(a> Tc ( V C ) 4.3 1N6082B 1N6083B 1N6084B 4.7 5.1 5.6 1N6085B 1N6086B 1N6087B 1N6088B 6.2

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1N5349

Abstract: 1N5359 1N4705 1N5360 1N2827 1N2806 1N3316 1N2826 1N5126 N4709
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED Z E N E R D IO D ES Early Industry Standard 250 mw D O -35 D O -7 Early Industry Standard Pow er 250 mw DO -35 DO -7 L ow Noise Low Current Mil - Sp e c 250m w D O -35 D O -7 V z Volts 1.8 2.0 [M il-S 19500/435] 2.2 2.4 2.7

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B