TDDD37 Search Results

1N4146

Abstract: 1N4141 1N4144 1N4139 1N4142 9s25 1N4140 4626 1n4145 1N4143
Contextual Info: INTERNATIONAL SEMICOND 4C1E D • TDDD37ñ D000070 TOT ■ ISEN In tern atio n al Semiconductor, In c High Current Plastic Silicon Rectifiers 1N4139 thru 1N4146 VOLTAGE RANGE 50 to 1000 PRV ■ CURRENT 3.0A at 105°C 1.5A at 140°C FEATURES • High surge current capability

Contextual Info: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified

Contextual Info: j>\ I n ter n a tio n a l y 1N4933GP S e m ic o n d u c to r , I n c . thru FAST RECOVERY PLASTIC SILICON RECTIFIERS VO LTA G E - 50 TO 600 Volts 1N4937GP CURRENT - 1.0 Ampere FEATURES MECHANICAL DATA • Glass Passivated Junctions :o C ase: JEDEC DO-41, molded

Contextual Info: I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VO LTAG E SUPPRESSORS 5KP5.0C thru 5KP110CA Bi-Polar Series 0 .4 0 ± .0 2 1 0 .1 6 ± .5 0 8 5.0 to 110 VOLTS 5,000 WATT PEAK POWER t 5.0 WATT STEADY STATE M AXIM UM RATINGS AND C H A R A C TER ISTIC S

Contextual Info: I n ter n a tio n a l 1N935 thru S e m ic o n d u c to r , I n c . 1N940B TEM PERATUR E COM PENSATED ZEN ER REFERENCE DIODES 9 .0 V O L T N O M IN A L Z E N E R V O L T A G E MAXIMUM RATINGS Operating Temperature: Storage Tem perature: DC Power Dissipation:

Contextual Info: SF3001 thru SF3004 I nternational S em ico nducto r , I nc . SUPER FAST 30.0 AMP RECTIFIER FEATURES: Dual rectifier construction, positive centertap Plastic material used carries Underwriters Laboratory recognition 94 V -0 High Surge Capability Superfast recovery times, high voltage

Contextual Info: I n ter n a tio n a l C8549 S e m ic o n d u c to r , I n c . PICOAMP LOW LEAKAGE DIODES DIFFUSED SILICON PLANAR 1 ABSOLUTE MAXIMUM RATINGS \ /• S YM BO L C H AR A C TE R IS TIC VALUE UNIT :o .06 5/.0 75 vR Reverse V oltage 35 V vRU Peak Reverse Voltage

SF2a

Contextual Info: I n ter n a tio n a l S e m ic o n d u c t o r I n c . SF21 th ru SF26 S U P E R FAST R E C O V E R Y , G LA S S P A S S IV A T E D , P L A S T IC R E C T IF IE R S VOLTAGE - 50 TO 600 Volts CURRENT - 2.0 Ampere FEATURES MECHANICAL DATA • Plastic Package carries Underwriters

Contextual Info: INTERNATIONAL SBR3035 thru S em ico nducto r , I nc . SBR3050 30 Amp SCHOTTKY POWER RECTIFIER Dim A B C D E F G H J M N P Min Max Min Max Notes 10-32 - - - - .424 .437 .505 .800 .453 .175 .405 .189 .310 .350 .065 .100 10.77 11.10 12.82 20.32 11.50 4 .44 10.29

Contextual Info: I n ter n a tio n a l S e m ic o n d u c t o r I n c . SF31 th ru SF36 SUPER FAST RECOVERY, GLASS PASSIVATED, PLASTIC RECTIFIERS VOLTAGE - 50 TO 400 Volts CURRENT - 3.0 Ampere MECHANICAL DATA FEATURES • Plastic Package carries Underwriters Laboratory Flam m ability Classification 94V -0

zener diode JEDEC 1N

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4896 thru TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4915A 12.8 V O LT N O M INA L ZENER VO LTAG E +/- 5% LOW NO ISE MAXIMUM RATINGS 500 m W at 50 °C 3.33 mW/°C above 50 °C Power Derating:

1N4057

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4057 thru 1N4085A HIGH VOLTAG E TEM PERATURE CO M PENSA TED ZENER DIODES Zener Voltage = 12.4 to 200 Volts ELECTRICAL CHARACTERISTICS f JEDEC TYPE N UMBER ZE N E R VOLTAGE ±5% Note 1 v z@ i2T

Contextual Info: p\ I n ter n a tio n a l s S e m ic o n d u c to r , I n c . HV Series 500 mA High Voltage Silicon Rectifiers w FEATURES: Diffused Silicon Junctions Glass Passivated Junctions Avalanche Characteristics Matched R everse Parameters Fast Recovery Series Low Reverse Leakage

Contextual Info: I n ter n a tio n a l 1N5681 S e m ic o n d u c to r , I n c . thru VOLTAGE VARIABLE CAPACITORS VERY HIGH Q, INTERMEDIATE VOLTAGE, LOW LEAKAGE 1N5695C 6.8 TO 100 PF ELECTRICAL CHARACTERISTICS T, = 25 °C unless o th e rw is e sp e cifie d \ /C H A R A C T E R IS T IC S -

Contextual Info: I nternatio n al W005M th ru S em ico n d u cto r , I n c . W10M M INIATURE SING LE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 1.5 Amperes FEATURES: .3 7 8 M ax 9 .6 D ia ' Plastic material used carries Underwriters Laboratory recognition 94 V -0

1N3896

Abstract: LF252 1n3898
Contextual Info: I n te r n a t/ o nal 1N3896 thru S e m ic o n d u c t o r , I n c . 1N3898 FORWARD REGULATOR Multi—Chip DIODES These high speed m u lti-p e lle t diodes are used in com puter circu its and general purpose applications. They consist o f one, two, or three silicon diode chips in series, m ounted in a

SBR6030

Abstract: SBR6035 SBR6040 SBR6045 60N40
Contextual Info: I n ter n a tio n a l SBR6030 thru SBR6045 S e m ic o n d u c to r , I n c . 60 Amp SCHOTTKY POWER RECTIFIER Dim Min Max Min A B C D E F G H J K M N - - - .677 .687 .793 1 .000 .447 .200 .450 .249 .375 17.19 10.84 2.92 .156 - 3.97 - .510 .080 . 175 - I P -

Contextual Info: INTERNATIONAL SGL41-20 thru SGL41-60 S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER RECTIFIERS V O L T A G E - 20 TO 60 Volts C U R R E N T - 1.0 Ampere MECHANICAL DATA FEA TU R ES - • P lastic Package carries Underwriters Laboratory Flam m ability C lassification

IN821

Contextual Info: INTERNATIONAL 1N821 SEMICONDUCTOR, INC. thru 1N829A TEM PER ATU R E C O M PEN SATED ZEN ER REFERENCE DIODES 6.2 and 6.5 5 V O L T N O M IN A L Z E N E R V O LT A G E MAXIMUM RATINGS Operating Tem perature: -55 °C to +200 0C Storage Tem perature: -55 °C to +200 °C

Contextual Info: I n ter n a tio n a l SR3035 thru SR3050 S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 30 to 50 Volts CURRENT - 30 Amperes FEATURES: .6 4 5 1 6 . 4 .6 2 5 ( 1 5 . 9 ) • Dual rectifier construction, positive centertap Kl -T£5

Contextual Info: I n ter n a tio n a l MB805 thru S e m ic o n d u c to r , I n c . MB810 MINIATURE SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 8.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low leakage, typically less than 0.1 uA

GLA100

Abstract: GLA28 LNA3100 LNA328
Contextual Info: LNA328 I n ter n a tio n a l thru LNA3100 S e m ic o n d u c to r , I n c . GLA28 600 M ILLIW ATT ZENER DIODES thru LOW NOISE, LOW VOLTAGE AVALANCHE DIODES 2.8 TO 10.0 VOLTS LNA TYPES C ISI ZEN ER TYPE VO LTAG E NUM BER Note 1 E LE C T R IC A L C H AR AC TER ISTIC S

Contextual Info: I n ter n a tio n a l SD101A thru SD101C S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER DIODES VOLTAGE - 40 TO 60 Volts CURRENT -10.0 mA FEATURES M EC H A N IC A L DATA • S chottky B arrier Junction 1 C a s e : H erm etically Sealed DO-35 :o ■ PN Junction Guard Ring

Contextual Info: I n ter n a tio n a l LL4001 S e m ic o n d u c to r , I n c . LL4007 thru SURFACE MOUNT 1.0 Amp SILICON RECTIFIER DIODE FEATURES: Plastic material has Underwriters Laboratory G Flammability Classification 94 V -0 Low Leakage Glass Passivated Junction G1 ¿L