1N6389 Search Results

Contextual Info: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified

1N6377

Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389

1N6389

Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: 1N6373 thru 1N6389 or MPTE-5 thru MPTE-45C 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional

TVS 36C

Abstract: diode zener 22c MPTE-45 ICTE 1N6373 1N6381 1N6382 1N6383 1N6384 1N6389
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

1N6373

Abstract: 1N6381 1N6382 1N6383 1N6384 1N6389 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

"Transient Voltage Suppressor"

Abstract: diode 1n6376 1N6373 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389 1N6381 1N6382 1N6389
Contextual Info: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional

Contextual Info: DIGITRON SEMICONDUCTORS 1N6373 – 1N6389 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR • Unidirectional and bidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 s • tclamping 0 volts to V(BR min):

1.5KE 20A 1N6278A

Abstract: KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A
Contextual Info: Order this data sheet by 1N5908/D MOTOROLA SEMICONDUCTOR \ TECHNICAL DATA 1 N5908 1N6373/lCTE-5 MPTE-5 thru 1N6389/lCTE:~.,C Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high

Contextual Info: 1N6382 − 1N6389 Series ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

Contextual Info: 1N6373 thru 1N6389 MPTE-5 thru MPTE-45C Transient Voltage Suppressor Breakdown Voltage 5.0 to 45 Volts Peak Pulse Power 1500 Watts Features  CASE: DO-201AD DO-27       Breakdown Voltages (VBR) from 5.0 to 45V 1500W peak pulse power capability with a 10/1000 s

IN6303

Abstract: l1303 cl1304 IN6303A MCL1300
Contextual Info: 1N6267,A thru IN6303,A 1N6373 thru 1N6389 ICTE-5.C thru ICTt-45,C See Page 6-74 MOTOROLA g CURRENT LIMITING DIODES Field-effect current lim iting diodes designed for applications re­ quiring a current reference or a constant current over a specified voltage range.

KE200A

Abstract: 1N590B 5ke200 1cte-5 5KE82 5KE56 5KE51 1N6267 1N6277/90-E3
Contextual Info: M 1N5908 1N6373/ICTE-5, C MPTE-5, C M O T O R O L A thru 1N6389/ICTE-45, C M PTE-45, C 1N6267, A/1.5KE6.8, A thru ZENER OVERVOLTAGE TRANSIEN T SUPPRESSOR 1N6303, A/1.5KE200, A M osorb devices are designed to protect voltage sen sitive compon entsfro m high voltage, high en ergy transients They have excellent

1N6373

Abstract: 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389 GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V

1N6373

Abstract: SMCJ6389 1N6381 1N6382 1N6389 IEC61000-4-4 MPTE-45C
Contextual Info: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional

Contextual Info: 1N6389 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage53 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage45 I(PPM) Max.(A)Pk.Pulse Current19

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: MPTE/1 N6 3 7 3 - 1 N 6 3 8 9 series MPTE SERIES 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS 01.016*0.050 The MPTE series 1500 W transient suppressors are designed specifically for the protection of CMOS, NMOS. BiMOS, and other intergrated circuits available today for TTL,

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits

1N623

Abstract: 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com JEDEC AND INDUSTRY STANDARD DEVICES MANUFACTURED JEDEC JEDEC

E223026

Abstract: SMD BR 17
Contextual Info: MDE Semiconductor, Inc. Single Minded Focus on Surge Suppression Solutions October 28, 2005 To whom it may concern: Product Description: Transient Voltage Suppressors TVS Diodes Manufacture / Vendor: MDE Semiconductor, Inc. LEAD FREE COMPONENTS 1. Axial lead Device: Plating component is 100% Sn, meeting the lead free standards.

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9