1N4139 Search Results

IN4143

Abstract: IN4145 IN4144 IN5406 diode IN5404 in5404 diode in5408 diode IN5406 IN5408 diode in5406
Contextual Info: RECTIFIER DIODES, Standard Recovery, Plastic Package Maximum Average Rectified Current at T„ IS I Number l0 Am ps t. ro 1N4139 1N4140 1N4141 I,» (Am ps) V,„ (V o te ) 1. (UAJ Bulk/Reel 200 1.2 5.0 500/1250 inches/m illim eters 100 105 400 600 800 X '

1N4146

Abstract: 1N4141 1N4144 1N4139 1N4142 9s25 1N4140 4626 1n4145 1N4143
Contextual Info: INTERNATIONAL SEMICOND 4C1E D • TDDD37ñ D000070 TOT ■ ISEN In tern atio n al Semiconductor, In c High Current Plastic Silicon Rectifiers 1N4139 thru 1N4146 VOLTAGE RANGE 50 to 1000 PRV ■ CURRENT 3.0A at 105°C 1.5A at 140°C FEATURES • High surge current capability

diode 3a05

Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Contextual Info: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050

1N4144

Abstract: 1N4146 1N4141 1N4145 1N4142 1N4143 1N4139 D0-201AD
Contextual Info: 1N4139 THRU 1N 4 l 46 Central Sem iconductor Corp. Central Sem iconductor Corp. SI L I CO N R EC T IF IER 3 . 0 AMPS, 50 THRU 1200 VOLTS ♦I JEDEC D0- 20 1 AD 14 5 Adams Avenue Hauppauge, New York 11 7 8 8 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4139 s e r i e s t y p e s a r e h i g h q u a l i t y a x i a l 1e ad s i 1 i c o n

Contextual Info: BL GALAXY ELECTRICAL 1N4139-1N4146 VOLTAGE RANGE: 50 - 1200 V CURRENT: 3.0 A PLASTIC SILICON RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Free, Alcohol, Isopropanol

1N4139-1N4146

Abstract: 1N4146 1N4144
Contextual Info: 1N4139-1N4146 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 - 1200 V CURRENT: 3.0 A DO - 27 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Free, Alcohol, Isopropanol and sim ilar solvents

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4139 thru 1N4146 HIGH CURRENT PLASTIC SILICON RECTIFIERS VO LTA G E - 50 TO 1200 Volts FEATURES CURRENT - 3.0 Ampere M ECHA NIC AL DATA • Plastic Pa c k a g e carries Underwriters L aborato ry F la m m ab ility Classification 9 4 V - 0

1N4140

Abstract: 1n4146
Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4139 thru 1N4146 HIGH CURRENT PLASTIC SILICON RECTIFIERS VOLTAGE - 50 TO 1200 Volts FEATURES CURRENT - 3.0 Ampere MECHANICAL DATA • Plastic Package carries Underwriters Laboratory Flammability Classification 94V -0

1N4146

Abstract: 1N4145 4139 temperature 1N4139 1N4142 1N4140
Contextual Info: BL GALAXY ELECTRICAL 1N4139 - - -1N4146 VOLTAGE RANGE: 50 - 1200 V CURRENT: 3.0 A PLASTIC SILICON RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Free, Alcohol, Isopropanol

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

N5401

Abstract: D0201AD N4935 DO-41 6R600 1N4140 D0-201AD DO41 1N4142 1N4007 DO-41 package
Contextual Info: INTERNATIONAL SEMICOND 4^E ]> • T00037Ô OOOOOll 471 B I S E » SCH OTTKY RECTIFIERS r Vrrm 7 O p e ra tin g a n d ^ S to ra g e Temp. R a n g e Type 1N5817 Package Volts DO-41 20 1.0 25 1N5818 1N5819 SR 120 DO-41 DO-41 DO-41 30 40 20 1.0 1.0 1.0 25 25

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

1NU7

Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Contextual Info: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l

IN2071

Abstract: 1N5171 1N2070 CER68 3c400 3001C 1N2069 1N4089 CER67 CER69
Contextual Info: N IC R O S E H I CORP/ R p n 1 4 E D | t llt D M D GQDOOlfl T | o; Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 CER73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

IN2071

Abstract: CER69 1N2070 2A200 CER68 1N4144 3C500 HC3030 1N5172 CER67
Contextual Info: NICROSEHI CORP/ R p n 14E D | tlltDMD GQDOOlfl T o; | Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 C ER 73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200 2A15 2A30