RN1Z Search Results

RN1Z

Contextual Info: BLGALAXY ELECTRICAL RN1Z Z VOLTAGE RANGE: 200 V CURRENT: 1.5 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 15 Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

RN1Z

Contextual Info: RN1Z ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 200 Volts Io : 1.5 Amperes D2 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 0.161 4.1

RN1Z

Contextual Info: RN1Z High Efficiency Rectifiers VOLTAGE RANGE: 200 V CURRENT: 1.5 A Features DO - 15 Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

Contextual Info: SANKEN ELECTRIC CO., LTD. RN1Z 1. Scope The present specifications shall apply to an RN1Z. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040608 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

RN1Z

Contextual Info: TOSHIBA RN1410,RN1411 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 A in u m u 'm m m m ^ur g RN1ZL11 u m u -m u • ■ ■ Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 3.5-as + 0.5 ■ I 0.ÍÍ5

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

Contextual Info: RN1210,1211 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 4.2 M AX FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2210, RN2211