1N27 Search Results

Contextual Info: C INTERNATIONAL 30E D • UT'HflB D0D0327 b ■ ' T :Ol-0'7 HI# 1-nil 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc, Telephone 617 681-0392 • TeleFax (617) 681-9135 ♦ Telex 928377 Ty. í— ' TYPE FEATURES 1N270 Low forward voltage drop

1N2767

Contextual Info: 1N2767 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage20.4 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W) Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175’ Package StyleAxial-25

Contextual Info: 1N2798 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)150#

Contextual Info: 1N2753 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N2784 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current22 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N2705 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

Germanium Power Diodes

Abstract: 1N273 1N279 Germanium Power Devices "Germanium Diode"
Contextual Info: iQAQQfiS CENTRAL SEMICONDUCTOR 920 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

4026 IC

Abstract: CI 4016 in276 1N276 IR411 ic 4081 ci 4081
Contextual Info: niL SPECS IC | G D D D 1 5 S □□57Bclb 1 | I INCH-PQ1JND~T MIL-S-19500/192B 6 October 1989 superseding-MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and

n452 ak

Abstract: toho electronics inc 1N4537 1N454 germanium diode 0Q0017 N452 n314 1N277 1N278
Contextual Info: BKC IIT^ÔB 0000331 & • 'T-Ol -07 30E D I NTERNATI ONAL M <r 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 BKC International Electronics Inc. L „ l Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N277 Low forward voltage drop

selenium diode

Abstract: "Germanium diode"
Contextual Info: 1N279 Germanium Diode 3.63 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N279 Online Store 1N279 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: Gold Bonded 1N277 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications AM/FM detectors DO-7 Glass Package Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm

diodes 1n270

Abstract: 1n270
Contextual Info: 1N270 Optimized for Radio Frequency Response 1.50 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N270 Online Store 1N270 Diodes Optimized for Radio Frequency Response Transistors Enter code INTER3 at checkout.* Integrated Circuits

RSF0820

Contextual Info: Standard Recovery Rectifiers Part Number RSF0820 1N2793 1N2794 1N2795 1N2796 1N2797 1N2798 1N2799 UT6105 UT6110 UT6120 UT6130 UT6140 UTR6440 UT6160 1N2800 1N2246 1N2246A 1N2248 1N2248A 1N2021 1N2250 1N2250A 1N2022 1N2023 1N2252 1N2252A 1N2024 1N2025 1N2254

xl 1507

Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
Contextual Info: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment

Contextual Info: 1N270+JAN Diodes Germanium Diode Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)50

Contextual Info: 1N2780 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.75 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition).75 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N277 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 500 mA p e a k If Vr 110 V P diss 80 mW @ Tc = 25 °C Tj -65 °C to +85 °C T stg -65 °C to +85 °C

Germanium power

Contextual Info: 1QAQOR5 CENTRAL SEMICONDUCTOR 92D 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in a hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

1N2739

Contextual Info: 1N2739 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage3.9 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N2737 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage2.6 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N2765 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.8 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W) Z(z) Max. (ê) Dyn. Imped.20 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175’ Package StyleAxial-13

Contextual Info: 1N2756 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

1n270

Contextual Info: Gold Bonded 1N270 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors 0.018-0.022" FM discriminators 0.458-.558 mm

D3E diode

Abstract: DSAIH0002536
Contextual Info: B K C INTERNATIONAL D3E D | 117^^03 □□□□155 _ Type No. 1N273_- r - o /-# 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135