1N58 Search Results

Contextual Info: 1N5817 - 1N5819 CREAT BY ART Pb 1.0AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection

diode 1n5818

Contextual Info: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical

1n5819 die

Abstract: 1N5817 1N5817-1N5819 1N5818 1N5819
Contextual Info: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

1N5811CBUS

Abstract: mil-prf-19500/742 1N5807 1N5811 EIA-481-B
Contextual Info: 1N5807CBUS thru 1N5811CBUS SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/742 and is ideal for high-reliability applications where a failure cannot be

1N5822 data sheet

Abstract: 1N5820 1N5820-1N5822 1N5821 1N5822 1n58201
Contextual Info: 1N5820 - 1N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

datasheets diode 1n5818

Abstract: 1N5817 1N5818 1N5819
Contextual Info: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

1N5819WL

Abstract: J-STD-020D
Contextual Info: 1N5819WL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 1.0 Ampere FEATURES SOD-123 • Low Forward Voltage Drop • High Surge Capability and High Current Capability • For Surface Mounted Applications • High Conductance

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

Contextual Info: 1N5820 thru 1N5822 REVERSE VOLTAGE FORWARD CURRENT SCHOTTKY BARRIER RECTIFIERS -20 to 40 Volts -3.0 Amperes D O -27 FEATURES • Metal-Semiconductor junction with guard ring • Expitaxial construction • Low forward voltage drop • High current capability

Contextual Info: DIGITRON SEMICONDUCTORS 1N5826-1N5828 15 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Characteristics Value TSTG Storage Temperature Range -55 to +175°C TJ Operating Junction Temperature Range -55 to +150°C RθJC Maximum Thermal Resistance 1.6°C/W Junction to case

Contextual Info: DIGITRON SEMICONDUCTORS 1N5820-1N5822 3 AMP SCHOTTKY RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MECHANICAL CHARACTERISTICS

Contextual Info: MCC TM Micro Commercial Components 1N5820 THRU 1N5822
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

HC 4011

Abstract: 1N5814HCE DC-4011 1N5812 1N5812HCE 1N5812KCE 1N5814 1N5814KCE 1N5816 1N5816HCE
Contextual Info: Class HC and Class K C Equivalents 1N5812—16 Ultrafas t Rectifier Die -Ob .133 SQ. U ltra fa s t Recovery R ectifier Glass passivated .009 MIN. .010 MAX. 20A Average, up to 150V Solderable silver both sides Available with Al top a n d /o r gold back — c o n ta c t fa c to ry

1n5819 melf

Abstract: melf Schottky glass
Contextual Info: 1N5817 thru 1N5819 Schottky Barrier Rectifiers DO-204AL DO-41 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

Contextual Info: 1N5817 thru 1N5819 WEITRON http://www.weitron.com.tw 1N5817 Thru 1N5819 Maximum Rating Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR RMS 1N5817 1N5818 1N5819 UNIT

Contextual Info: VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: Bulletin PD-20647 rev. C 11/04 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop

1N5817

Abstract: 1N5818 1N5819 DO41
Contextual Info: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP

1N5818

Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Contextual Info: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225

datasheets diode 1n5819

Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
Contextual Info: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been

datasheets diode 1n5819

Abstract: 1N5817 1N5818 1N5819 DO-204AL
Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere DO-204AL FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction

datasheets diode 1n5818

Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5818 1N5819 DO-204AL
Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES DO-204AL 1.0 25.4 MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0