2SC53 Search Results

Contextual Info: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)

Contextual Info: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 s max , tf = 0.3 μs (max) • High collector breakdown voltage: VCEO = 400 V

2SA1986

Abstract: 2SC5358
Contextual Info: JMnic Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

2SA1987 2SC5359

Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
Contextual Info: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage

400V voltage regulator

Abstract: 2Sc5352 npn transistors 400V 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching

"medium power Amplifier"

Abstract: 2SC5342UF
Contextual Info: Transistors IC SMD Type Medium power amplifier 2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

NPN Transistor 600V

Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)

2SC5376

Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •

c5351

Abstract: 2SC5351
Contextual Info: 2SC5351 東芝トランジスタ シリコンNPN三重拡散形 2SC5351 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • 高速です。 : tr = 0.5 s 最大 , tf = 0.3 μs (最大)

c5353

Abstract: 2SC5353 ic c5353 c-5353 data sheet c5353
Contextual Info: 2SC5353 東芝トランジスタ シリコンNPN三重拡散形 2SC5353 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • 高速です。 : tf = 0.5 s 最大 (IC = 1.2 A)

Contextual Info: Transistors IC SMD Type Product specification 2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

NF 747

Abstract: 2SC5319 hfe 4049 V722 BB34 GA 1619
Contextual Info: TO SHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure :N F = 1.3dB f=2GHz • High Gain : Ga = 11.5dB (f=2GHz) 1.25 ±0.1 13 -¡3 M A X IM U M RATINGS (Ta = 25°C)

2sc5358

Abstract: 2SA1986
Contextual Info: SavantIC Semiconductor Product Specification 2SC5358 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

2SC5339

Abstract: IC071
Contextual Info: SavantIC Semiconductor Product Specification 2SC5339 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV

A007

Abstract: cob ic marking a007 2SA1980 2SC5343 SUT464M TRANSISTOR marking code X4 MARKING X4
Contextual Info: SUT464M Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Descriptions • General purpose transistor Features • Both 2SA1980 chip and 2SC5343 chip in SOT-25 package Ordering Information Type NO. SUT464M Marking X4 Package Code SOT-25 Outline Dimensions

2SC5379

Contextual Info: Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current

2SC5343

Abstract: SUT486J kst60
Contextual Info: SUT486J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT486J Package Code 6X SOT-363 Outline Dimensions unit : mm

2sa1987 transistor equivalent

Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS

Contextual Info: TO SHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC 5356 SWITCHING REGULATOR APPLICATIONS HIGH VO LTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us (Max.) (Iq = 1.2 A)

Contextual Info: TO SHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC 5355 SWITCHING REGULATOR APPLICATIONS HIGH VO LTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. , tf = 0.3 /us (Max.)

Contextual Info: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)

2SC5347A

Abstract: ITR08158 ITR08159 ENA1087
Contextual Info: 2SC5347A Ordering number : ENA1087 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347A High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification

Contextual Info: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2i e|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5317 2Ghz amplifier
Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)