2SC5356 Search Results

Contextual Info: TO SHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC 5356 SWITCHING REGULATOR APPLICATIONS HIGH VO LTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us (Max.) (Iq = 1.2 A)

2SC5356

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •

2SC5356

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •

Contextual Info: TOSHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS U n it in mm HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Ex cellen t Sw itch in g Tim es : tf = 0.5 /us (M ax.) (l£ = 1.2 A )

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •

Contextual Info: Transistors SMD Type Product specification 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 min (IC = 0.15 A)

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •

Contextual Info: TOSHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 6 .8 M A X . DC-DC CONVERTER APPLICATIONS (A ) 5.2 ± 0 .2 c • Excellent Switching Times : tf = 0.5 /us (Max.) (Iq = 1.2 A)

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •

2SC5356

Contextual Info: TO SH IBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Unit in mm • Excellent Switching Times : tf = 0.5 /¿s (Max.) (l£ = 1.2 A)

2SC5356

Contextual Info: TO SH IBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Unit in mm • Excellent Switching Times : tf = 0.5 /¿s (Max.) (l£ = 1.2 A)

2SC5356

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) · High collectors breakdown voltage: VCEO = 800 V

2SC5356

Abstract: smd marking TF
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffused Type 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 min (IC = 0.15 A)

Contextual Info: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 s (max) (IC = 1.2 A) •

Contextual Info: T O SH IB A 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 5 3 56 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf= 0.5/us (Max.) (Iç = 1.2A)

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

transistor compatible 2SK3569

Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Contextual Info: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TK10A60D

Abstract: 4614 mosfet 2sk3911 TB6817WBG TK15A50D TPCA8030-H TCV7102F TB-7005 TPC8A03 CMS19
Contextual Info: システムカタログ 2009-3 システムカタログ 電源用半導体 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / AC入力スイッチング電源回路と推奨新製品シリーズ ~ ● パワーマネジメント部

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s
Contextual Info: 2000-2 エネルギーとエレクトロニクス 東芝半導体システムカタログ TV編 Y1A1AH TVの機能別基本ブロック図 音声処理部 周波数シンセサイザ部 音声多重復調 SIF UHF/VHF チューナ サラウンド 機能 SAW

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs