1N60L Search Results
1N60L Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 1N60L | UMW | TO-252 N-CHANNEL POWER MOSFET | Original | 727.92KB | 9 | 
1N60L Price and Stock
UMW 1N60LTO-252 N-CHANNEL POWER MOSFET | 
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1N60L | Cut Tape | 2,427 | 1 | 
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Samsung Semiconductor SL-B8T1N60LAWWLED MOD H INFLUX LNR STRP 4000K | 
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SL-B8T1N60LAWW | Tray | 79 | 1 | 
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Alpha & Omega Semiconductor AOI1N60LMOSFET N-CH 600V 1.3A TO251A | 
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AOI1N60L | Tube | 
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Alpha & Omega Semiconductor AOT11N60LMOSFET N-CH 600V 11A TO220 | 
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AOT11N60L | Tube | 
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Alpha & Omega Semiconductor AOB11N60LMOSFET N-CH 600V 11A TO263 | 
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AOB11N60L | Reel | 
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1N60L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged  | 
 Original  | 
O-220F2 OT-223 O-220 O-220F QW-R502-052 | |
1n60Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged  | 
 Original  | 
QW-R502-052 1n60 | |
1N60 mosfet
Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 
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 Original  | 
OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche  | 
 Original  | 
QW-R502-052 | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged  | 
 Original  | 
QW-R502-052 | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged  | 
 Original  | 
QW-R502-052 | |
1n60Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche  | 
 Original  | 
O-252 O-220 QW-R502-052 1n60 | |
1N60 MOSfet
Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L 
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 Original  | 
O-220 QW-R502-052 1N60 MOSfet 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high  | 
 Original  | 
1N60-KW 1N60-KW QW-R205-054 | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche  | 
 Original  | 
QW-R502-052 | |
mosfet 1N60
Abstract: 1n60 1N60 TO92 
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 Original  | 
QW-R502-052 mosfet 1N60 1n60 1N60 TO92 | |
UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V 
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 Original  | 
OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V | |
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 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics  | 
 Original  | 
O-220 1N60L 1N60-TA3-T 1N60L-TA3-T 1N60-TM3-T 1N60L-TM3-T 1N60-TN3-R 1N60L-TN3-R 1N60-TN3-T 1N60L-TN3-T | |
1n60b
Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 
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 Original  | 
QW-R502-052 1n60b 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 | |
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