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1N60L Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
1N60L		UMW	TO-252 N-CHANNEL POWER MOSFET	Original	PDF	727.92KB	9

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Alpha & Omega Semiconductor AOTF11N60L Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	AOTF11N60L				1,000	1 - 10 - 100 - 1000 $0.76 10000 $0.76	Get Quote
ComSIT USA	AOTF11N60L		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFP21N60LPBF Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IRFP21N60LPBF				1	1 $3.53 10 $3.18 100 $2.52 1000 $2.35 10000 $2.35	Get Quote
Bristol Electronics	IRFP21N60LPBF		3,476			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	IRFP21N60LPBF		75			1 $6.92 10 $6.92 100 $5.19 1000 $4.50 10000 $4.50	Buy Now
Vishay Siliconix IRFP21N60LPBF POWER MOSFET Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRFP21N60LPBF		175			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Unisonic Technologies Co Ltd 1N60L-T92-B B MOSFETs; 1N60L-T92-B B; UTC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Maritex	1N60L-T92-B B		500		5	1 $0.08 10 $0.08 100 $0.08 1000 $0.06 10000 $0.06	Buy Now
Unisonic Technologies Co Ltd 1N60L-T92-B KW MOSFETs; 1N60L-T92-B KW; UTC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Maritex	1N60L-T92-B KW		228		5	1 $0.05 10 $0.05 100 $0.05 1000 $0.04 10000 $0.04	Buy Now

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1N60L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	o-220f2 ot-223 o-220 o-220f +1qw-r502-052	PDF
1n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	qw-r502-052 1n60	PDF
1N60 mosfet Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)	Original	ot-223 o-220 qw-r502-052 1n60 mosfet +91n60b diode 1n60 1n60g 1n60l 1n60 diode mosfet 1n60 1n60 diode equivalent 1n60 1n60 to92	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	qw-r502-052	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	qw-r502-052	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	qw-r502-052	PDF
1n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	o-252 o-220 qw-r502-052 1n60	PDF
1N60 MOSfet Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	o-220 qw-r502-052 1n60 mosfet 1n60 diode +81n60-tm3-t 1n60 diode 1n60 1n60-ta3-t c25 diode to220 c25 mosfet 1n60l-tf3-t 1n60l	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	1n60-kw qw-r205-054	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	qw-r502-052	PDF
mosfet 1N60 Abstract: 1n60 1N60 TO92 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	qw-r502-052 mosfet 1n60 1n60 1n60 to92	PDF
UTC1N60 Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	ot-223 o-220 o-220f o-251 +9o-252 qw-r502-052 utc1n60 1n60l 1n60ga 1n60g 1n60 mosfet to126 mosfet mosfet 12a 600v	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics	Original	o-220 1n60l 1n60-ta3-t 1n60l-ta3-t +61n60-tm3-t 1n60l-tm3-t 1n60-tn3-r 1n60l-tn3-r 1n60-tn3-t 1n60l-tn3-t	PDF
1n60b Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	qw-r502-052 1n60b 1n60 diode 1n60 mosfet +71n60a 600v 2a sot223 mosfet n-channel 1n60g 1n60-b 1n60 diode 1n60 utc1n60	PDF