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United Technologies Corporation


United Technologies Corporation 1N60G-AA3-R 1N60G-AA3-R by UTC is an N-channel power MOSFET with a 1.2A current rating and 600V voltage rating, housed in a SOT-223 package. It is RoHS compliant, making it suitable for environmentally friendly applications.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
IBS Electronics	1N60G-AA3-R		2,500		1	1 $0.07 10 $0.07 100 $0.07 1000 $0.07 10000 $0.07	Buy Now
Win Source Electronics	1N60G-AA3-R		175,000			1 - 10 - 100 - 1000 $0.06 10000 $0.04	Buy Now

1N60GA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	O-220F2 OT-223 O-220 O-220F QW-R502-052	PDF
1n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052 1n60	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052	PDF
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	1N60-KW 1N60-KW QW-R205-054	PDF
UTC1N60 Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V	PDF