1N50 Search Results

1N5062

Contextual Info: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

Contextual Info: Rectifiers, General purpose Continued Io (AMPS) 1.5 1.0 @ TA (°C) 75 55 75 70 75 IFSM (AMPS) 50 50 50 50 50 / I CASE DO-41 GPR-1A VRRM (VOLTS) 50 1N5391 100 200 1N5059 1N5614 CPR1-010 1N5392 CR1-010 CPR1-020 1N5393 CR1-020 300 400 1N5394 1N5060 CPR1-040

1N4097

Abstract: 1N5107 1N508 MZ-11 MZ240 MZ210 1N5117 MZ80 1N5064 1N5065
Contextual Info: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 Micro/semi Corp. The diode expprts SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.

Contextual Info: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

1n5062g

Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

1N5059

Abstract: 1N5060 1N5061 1N5062 DO-204AP
Contextual Info: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA

1N5062 diode

Abstract: 1N5060 1N5061 1N5061 vishay
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading

IN5048

Abstract: IN5099 IN5046 IN5042 1N5030 1N5041 IN5040 MZ240 NER 251 1N5029
Contextual Info: Zener Type No. Zener Voltage 3t Irr @ mA Volts Max. Zener Impedance @ I zt Ohms 1N5023 1N5024 1N5025 13.0 14.0 15.0 48.0 45.0 42.0 4 .8 5.4 6.0 1N5026 1N5027 1N5028 1N5029 1N5030 1N5031 I N 5032 1N5033 1N5034 16.0 17.0 18.0 19.0 20.0 22,0 39.0 37.0 35.0 33.0

1N5051A

Abstract: 1N5048 1N4479 5W zener diode 1N4477 1n5043a 1N5050 1N4478 1N4480 1N5036A
Contextual Info: Zener Diodes Continued POWER 1.5 WATT CASE ZENER VOLTAGE 2.0 WATT 2.5 WATT DO-41 AX-5W HIGH PERFORMANCE INDUSTRY STANDARD 33 1N4477 1N5937B 1N5036A 36 1N4478 1N 5938B 1N5037A 39 1N4479 1N5939B 1N5038A 43 1N4480 1N 5940B 1N5039A 1N4481 1N5941B HIGH VOLTAGE

Contextual Info: 1N5071 General-Purpose Reference/Regulator Diode 2.99 Diodes Reference/Regulator D. Page 1 of 1 Enter Your Part # Home Part Number: 1N5071 Online Store 1N5071 Diodes General-Purpose Reference/Regulator Diode Transistors Integrated Circuits Optoelectronics

1n5062 equivalent

Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
Contextual Info: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060

1N4719

Abstract: 1n4999 1N4997 1N4721 1N5002 1N4720 k 0046 lta 601
Contextual Info: 1N4719 thru 1N4725 1N4997 thru 1N5003 M M O T O R O L A S IL IC O N R E C T IF IE R S 3 .0 A M P E R E S 5 0 - 1 0 0 0 VOLTS D IFF U S E D J U N C T IO N LEAD M O UNTED POWER RECTIFIERS . h a v in g lo w fo rw a rd voltage drop an d h e rm e tic m e ta l packages.

Z219

Abstract: z234 Z836 z845 Z827 Z236 Z211B zener z8 Z824 IC Z809
Contextual Info: 1N5063 - 1N5117 M Z806 - M Z890, MZ 210 - MZ 2 4 0 M icm em i Corp. ^ The o<oce experts SANTA A N A, CA ! SC O T T SD A LE , A Z F o r m ore in fo rm a tio n call: 714 9 7 9 - 8 2 2 0 / 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • M icrom iniature packag e.

1N5048

Abstract: 1N5008 1n5051 1N5047 1N5008A 1N5025 1n5025a 1N5042
Contextual Info: 2.5 WATT, Molded JEDEC TYPE NUMBERt NOMINAL ZENER VOLTAGE Vz VOLTS TEST CURRENT I zt mA 1N5008A I N 5009A 1N5010A 1N5011A 1N5012A 3.3 3.6 3.9 4.3 4.7 189.0 173.0 160.0 145.0 133.0 6.0 5.5 5.0 4.0 3.5 400 400 400 400 500 1.0 1.0 1.0 1.0 1.0 100 100 100 100

Contextual Info: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^

1ns061

Contextual Info: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

1N5000 SERIES

Abstract: 1N5000 tic 2160
Contextual Info: :+ — K /D io d es 1N5000 series 1 N 5 0 0 0 y V =l > X fc° $ df y series 77 ;u y u - ^ 500mW Æ HÆ # *f ^ — K Silicon Epitaxial Planar 500mW Zener Diodes • • « * 1 l î ÿ Z i i l t T ' * 3 \tii@ /D im en sio n s Unit : mm) (JEDEC : DO- 35)o 2)

Contextual Info: ESE D M I C R O S E M I CORP t l l S ñ h S OOGDTTfl b 1N5063 - 1N5117 MZ806 - MZ890, MZ 2 1 0 -M Z 240 MierasemiCarp. ' Ttwí&jetxpttts SANTA ANA, CA SCOTTSDALE. AZ Foe more information calk 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • •

DIODE 1N5060

Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading

Contextual Info: 1N5065 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.2 @I(Z) (A) (Test Condition)75m Tolerance (%)5 P(D) Max. (W)3.0 Z(z) Max. (ê) Dyn. Imped.3.0 Temp Coef pp/10k Maximum Operating Temp (øC)175’ Package StyleAxial-4

1n5048

Abstract: 1N4479 1N4477
Contextual Info: Zener Diodes Continued POWER 1.5 WATT 2.0 WATT 2.5 WATT HIGH VOLTAGE AX-5W GENERAL PURPOSE CASE ZENER VOLTAGE HIGH PERFORMANCE DO-41 INDUSTRY STANDARD 33 1N4477 1N5937B 1N5036A* 36 1N4478 1N5938B 1N5037A* 39 1N4479 1N5939B 1N5038A* 43 1N4480 1N5940B 1N5039A*

1n5060

Abstract: 1N5062 1N5061 1N5059
Contextual Info: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,

1n5060

Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading