1N506 Search Results

1N5062

Contextual Info: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

Contextual Info: Rectifiers, General purpose Continued Io (AMPS) 1.5 1.0 @ TA (°C) 75 55 75 70 75 IFSM (AMPS) 50 50 50 50 50 / I CASE DO-41 GPR-1A VRRM (VOLTS) 50 1N5391 100 200 1N5059 1N5614 CPR1-010 1N5392 CR1-010 CPR1-020 1N5393 CR1-020 300 400 1N5394 1N5060 CPR1-040

1N4097

Abstract: 1N5107 1N508 MZ-11 MZ240 MZ210 1N5117 MZ80 1N5064 1N5065
Contextual Info: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 Micro/semi Corp. The diode expprts SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.

Contextual Info: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically

1n5062g

Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

1N5059

Abstract: 1N5060 1N5061 1N5062 DO-204AP
Contextual Info: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA

1N5062 diode

Abstract: 1N5060 1N5061 1N5061 vishay
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading

1n5062 equivalent

Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
Contextual Info: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060

Z219

Abstract: z234 Z836 z845 Z827 Z236 Z211B zener z8 Z824 IC Z809
Contextual Info: 1N5063 - 1N5117 M Z806 - M Z890, MZ 210 - MZ 2 4 0 M icm em i Corp. ^ The o<oce experts SANTA A N A, CA ! SC O T T SD A LE , A Z F o r m ore in fo rm a tio n call: 714 9 7 9 - 8 2 2 0 / 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • M icrom iniature packag e.

Contextual Info: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ 1.0 Ampere oper­ ation at Ta=75°C with no thermal runaway 'f e

Contextual Info: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^

1ns061

Contextual Info: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Contextual Info: ESE D M I C R O S E M I CORP t l l S ñ h S OOGDTTfl b 1N5063 - 1N5117 MZ806 - MZ890, MZ 2 1 0 -M Z 240 MierasemiCarp. ' Ttwí&jetxpttts SANTA ANA, CA SCOTTSDALE. AZ Foe more information calk 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • •

DIODE 1N5060

Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading

1n5060

Abstract: 1N5062 1N5061 1N5059
Contextual Info: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,

1n5060

Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading

Contextual Info: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction

1n5062 equivalent

Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
Contextual Info: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060

1N5060GP

Contextual Info: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.

Contextual Info: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current

In5062

Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
Contextual Info: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­

Contextual Info: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA

1N5059

Abstract: 1N5062 1N5060 1N5061
Contextual Info: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand

Z228

Abstract: Z219 z845 Z238 Z-807 Z224 z807 e Z812 Z214 Z836
Contextual Info: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 •MZ 240 Microsemi Corp. ' The diode experts SANTA ANA, CA For m ore inform ation call: 714 979-8220 3-WATT G U S S ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.