1N36 Search Results

1n3600

Abstract: 1N4150 1n3600 chip
Contextual Info: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

Contextual Info: 1N3611GP thru 1N3615GP, 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 A

DIODE 1N1206A

Abstract: 1n1124r 1N1124A 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A
Contextual Info: INCH-POUND MIL-PRF-19500/260F 10 December 1999 SUPERSEDING MIL-PRF-19500/260E 6 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A AND AR VERSIONS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

3611

Abstract: 1N3611
Contextual Info: 1N3611 thru 1N3614 and 1N3957 Standard STANDARD RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA AV AI L AB L E AS DATA SHEET 128, REV. A.1 1 N , J AN , J AN T X , J ANT XV

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

Contextual Info: Freescale Semiconductor Mask Set Errata 1N36B Rev 08 AUG 2013 Mask Set Errata for Mask 1N36B Introduction This report applies to mask 1N36B for these products: • KINETIS72MHZ Errata ID Errata Title 3863 ADC: In 16-bit differential mode, ADC may result in a conversion error when positive input is near upper

Contextual Info: DIGITRON SEMICONDUCTORS 1N3643-1N3647 1N4254-1N4257 1N5181-1N5184 HIGH VOLTAGE RECTIFIERS MAXIMUM RATINGS Parameter Value Operating and Storage Temperature: -65 to +175°C Thermal resistance 38° junction to lead at 3/8” lead length from body Average rectified forward current IO

Contextual Info: DIGITRON SEMICONDUCTORS 1N3670A-1N3673A STANDARD RECOVERY RECTIFIERS ELECTRICAL CHARACTERISTICS Symbol 1N3670 1N3671 1N3672 1N3673 Repetitive peak reverse voltage Characteristics VRRM 700V 800V 900V 1000V Maximum RMS reverse voltage VRMS 490V 560V 630V 700V

1N3611

Abstract: JAN1N3613 1N3957 melf diode, square 1N3597 1N3614 Microsemi micronote series 050 JANTX 1N3611 microsemi marking 1n3 1N5614
Contextual Info: 1N3611 thru 1N3614, 1N3957 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/228 and is ideal for high-reliability applications where a failure cannot be

1N3492

Abstract: 1N3493 1N3495 1N3491 FSM400 1N3494 S3560PF 1N3659 1N3660 S3520PF
Contextual Info: Silicon Power Rectifier S /R 3 5 P F Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes M A B C D E F G H h Standard Polarity: Case is Cathode Reverse Polarity; Case is Anode Microsemi Catalog Number S3520PF S3540PF S3560PF JEDEC Number 1N3491, 1N3659

1N1206RA

Abstract: i2t graph 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N5331
Contextual Info: 1 Silicon Rectifiers 1N1195 SE E PAG E 203 1N1199A-1N1206A 1N1199RA-1N1206RA 1N3670A-1N3673A 1N5331 These diffused junction rectifiers are designed specifically to provide high perform ance fo r ap p li­ cations up to 22 am peres A verage F orw ard C u rren t in single-phase applications w ith repetitive

1N3600

Abstract: 1N4150 1N4150-1 JTXV1N3600
Contextual Info: COMPUTER DIODE JAN, JANTX & JANTXV 1N3600 JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 200mA Low Power, Switching FEATURES DESCRIPTION • • • • • This series of switching diodes is useful in many computer sw itching applications, for both m ilitary and comm ercial systems.

FH1100

Abstract: diode do7-15 1N4148-1JANTXV 1N4148-1JANTX 1N4148-1 JAN 1N3600JANTXV 1N4148-1 1N4148JAN 1N4148JANTX 1N4148JANTXV
Contextual Info: FAIRCHILD DIODES DIODES MILITARY QUALIFIED SMALL SIGNAL DIODES NUMERIC LISTING GLASS PACKAGE Item DEVICE NO. BV V Min •r nA Max Vr V @ Vf V Max @ If mA (Confd) c trr pF Max ns Max Package No. 1 1N3600JANTXV 75 100 50 1.0 200 2.5 4.0 DO-7 2 1N4148JAN 100

10CR1

Contextual Info: DO-41 Rectifiers - high reliability, glass passivated junction Electrical Characteristics At Ta=25°C, U nless Otherwise Specified IR at V R Type No. max (MA min (V) PIV VF max (V) @ IF IO IFM (V) (mA) (A) (mA) 1N3611 1 200 240 1.1 1000 1 20 1N3612 1 400

DSAIH0002537

Contextual Info: B K C I NTERNATI ONAL 03E D | QGQD2Sfl Type No. 1N3666M1 JAN GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681 -0392 | TeleFax (617) 681-9135 m Telex 928377 FEATURES Low forward voltage drop— low power consumption

Contextual Info: 1N3611GP thru 1N3614GP and 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A IR 1.0 µA VF 1.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation

1n4001 melf

Contextual Info: Standard Recovery Rectifiers Part Number ' JANTXV1N649-1 USS15 USS10 USS7.5 1N4001 1N4001GP DL4001 GS1A RL101 S1A UR105 1N4002 1N4002GP DL4002 GS1B RL102 S1B UR110 UT236 UR115 1N3611 1N4003 1N4003GP 1N4245 1N5614 1N5614US DL4003 GS1D 1N3611 JAN1N4245 JAN1N5614

Contextual Info: 1N3692 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage36 @I(Z) (A) (Test Condition)3.4m Tolerance (%)20 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.70 Temp Coef pp/10k8.5 Maximum Operating Temp (øC)175þ

Contextual Info: 1N3613+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

Contextual Info: 1N3679 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)13m Tolerance (%)20 P(D) Max. (W)750m¥ Z(z) Max. (ê) Dyn. Imped.8.5 Temp Coef pp/10k Maximum Operating Temp (øC)175þ Package StyleDO-15var

Contextual Info: 1N3675 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.8 @I(Z) (A) (Test Condition)19m Tolerance (%)20 P(D) Max. (W)750m¥ Z(z) Max. (ê) Dyn. Imped.4.5 Temp Coef pp/10k Maximum Operating Temp (øC)175þ

Contextual Info: 1N3614 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

Contextual Info: 1N3694 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage43 @I(Z) (A) (Test Condition)3.0m Tolerance (%)20 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.93 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)175þ