1N36 Search Results

1N3957

Abstract: SJ36XX 1N39 diode piv OF 5000 VOLTS
Contextual Info: 1N3611 thru 1N3614 and 1N3957 Standard ST ANDARD RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA A VAILABLE AS DATA SHEET 128, REV. A.1 JAN JANTX JANTXV JAN EQUIVALENT* :

1N3611GP

Abstract: 1N3614GP 1N3957GP DO-204AL JESD22-B102 J-STD-002
Contextual Info: 1N3611GP thru 1N3614GP & 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat *Glass Encapsulation technique is covered by

Contextual Info: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

1N4152

Abstract: 41S21
Contextual Info: TYPES 1N4151 THRU 1N4154 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699270, O CTOBER 1 9 6 6 -R E V IS E D AU G U ST 1969 F A S T S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4151 . . 1N3604 1N4152 . . 1IM3605 . . . 1N4533

1N3611GP

Abstract: 1N3614GP 1N3957GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N3611GP thru 1N3614GP and 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat

1N36

Abstract: 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A DO-203AA
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

Contextual Info: 1N3618 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current16 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)16 @Temp. (øC) (Test Condition)150#

Contextual Info: 1N3614+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

Contextual Info: 1N3659R Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)78 @Temp. (øC) (Test Condition)25õ

Contextual Info: 1N3614+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

Contextual Info: 1N3699 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage68 @I(Z) (A) (Test Condition)1.8m Tolerance (%)20 P(D) Max. (W)750m¥ Z(z) Max. (ê) Dyn. Imped.230 Temp Coef pp/10k Maximum Operating Temp (øC)175þ

Contextual Info: 1N3665 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)100#

Contextual Info: 1N3611+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

Contextual Info: 1N3676 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage7.5 @I(Z) (A) (Test Condition)17m Tolerance (%)20 P(D) Max. (W)750m¥ Z(z) Max. (ê) Dyn. Imped.5.5 Temp Coef pp/10k Maximum Operating Temp (øC)175þ

Contextual Info: ^vnL-CotuLatot tPiaduat*. 20 STERN AVE 3PR1NQFIELD, NEW JERSEY 07081 U.3A TELEPHONE: 973 378-2882 (218)1 FAX (973); 1N361 GENERAL PUrtPOSE ABSOLUTE MAXIMUM RATINGS Maximum Tamperatu.os Storage Temperature Operating Junction Temperature -65°C to +200°C

Contextual Info: 1N3611GPTHRU 1N3614GP AND 1N3957GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 1 . 0 Ampere DO-2Q4AL FEATURES & ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction

Contextual Info: Zener Diodes Continued POWER 1.0 WATT CASE DO-41 ZENER VOLTAGE GENERAL PURPOSE GENERAL PURPOSE INDUSTRY STANDARD GENERAL PURPOSE 33 1N3691B 1N4174B 1N4752A 1N5575B 36 1N3692B 1N4175B 1N4753A 1N5576B 39 1N3693B 1N4176B 1N4754A 1N5577B 43 1N3694B 1N4177B 1N4755A

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

1N4009

Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

1N1124A

Abstract: 1N1124RA 1N1126A 1N1126RA 1N1128A 1N1128RA 1N3649 1N3649R
Contextual Info: Military Silicon Power Rectifier 1N1124A-1N1128A, 1N3649, 1N365Q Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity; Stud is Cathode Reverse Polarity: Stud is Anode

1N1199A data sheet

Abstract: 1N1206A 1N3671 PBY274 1N1199A 1N1199AR 1N1200A 1N3673 PBY271 PBY272
Contextual Info: 1N1199A . 1N1206A, 1N3671, 1N3673, PBY271 . PB277 1N1199A . 1N1206A, 1N3671, 1N3673, PBY271 . PB277 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N5426

Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

Contextual Info: 1N3671A Standard Rectifier trr more than 500ns 9.88 Diodes High-Speed/Fast Recover. Page 1 of 1 Enter Your Part # Home Part Number: 1N3671A Online Store 1N3671A Diodes Standard Rectifier (trr more than 500ns) Transistors Integrated Circuits Optoelectronics

1N3660R

Abstract: 24v linear stepper motor 1.8 step angle motorola 1n3659r 1N3659R 1N3659 1N3661 DO-208AA 1N3663 1N3660 1N3661R
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 1 2 E D I fc.3fc.7B 55 0 Q 7T S 37 fl I -O h 1N3659 thru 1N3663 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 3 0 -A M P R E C T I F IE R S LO W C O S T R E C T IF IE R S FO R M E D IU M C U R R E N T IN D U S T R IA L A N D C O M M E R C IA L A P P L IC A T IO N S