1N3645 Search Results

1N3647

Abstract: 1N3646 CI 4016 ic 3645 sh ln3644 1N3644 1N3645 DD03L 1N3992
Contextual Info: i c | □□00125 DODBbOfl b | MIL SPECS MIL-S-19500/279C NAVY AMENDMENT 3 23 Ja n u a ry 1973 SUPERSEDING 1/ AMENDMENT 2 16 O c to b er 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPES 1N3644, 1N3645, 1N3646, AND 1N3647 This amendment form s a part of Military Specification

Contextual Info: RECTIFIER, up to 3kV, 600mA, EiUVU U L ^.L ^L r-L l 2.5ns 1N3645 1N3646 1N3647 ^ o n L H I ^ rp=arL-n January 7, 1998 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HiGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE

SM25

Abstract: 1N3645 1N3647 SM30 1N3646 SM20
Contextual Info: RECTIFIER, up to 3kV, 600mA, 2.5µs January 7, 1998 1997 SEMTECH CORP. 1N3645 1N3646 1N3647 SM20 SM25 SM30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 3kV, 600mA, 2.5µs 1N3645 1N3646

Contextual Info: 1N3645 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600m @Temp (øC) (Test Condition)55Þ V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.14 V(FM) Max.(V) Forward Voltage5.0 @I(FM) (A) (Test Condition)250m @Temp. (øC) (Test Condition)25õ

1N3645

Abstract: 1N3646 SM25 1N3647 SM20 SM30 UB-73
Contextual Info: SEMTECH CORP SflE D • 013^13^ 00Q2b71 SIT 1N3645 1N3646 1N3647 HIGH VOLTAGE STANDARD RECOVERY AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • • • • SM20 SM25 SM30 Q U IC K REFERENCE DATA • High thermal shock resistance

HIGH VOLTAGE DIODE 3kv

Contextual Info: is t i January 7, 1998 RECTIFIER, up to 3kV, 600mA, 2.5|JS 1N3645 1N3646 1N3647 SM20 SM25 SM30 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE Q UICK REFERENCE DATA

24163

Abstract: USR12 1N6786 usr18 1N6789 UGF-2.5 UGF2.5
Contextual Info: High Voltage Rectifiers Mic,SSS!Si I i Part Number ! Microsemi Division Package Outline Type Mil Data Spec ¡ Sheet ID 1N6786 R1200 R1200-F 1N6787 USR12 US12 1N3644 JAN1N3644 JANTX1N3644 R1500 R1500-F USR15 1N6788 US15 USR18 R1800 R1800-F US18 1N6789 1N3645

JANTX, JX, JAN

Abstract: 1N3644 1N3645 1N3646 1N3647 1N3645 JANTX
Contextual Info: INCH-POUND MIL-PRF-19500/279E w/AMENDMENT 1 26 October 2010 SUPERSEDING MIL-PRF-19500/279E 26 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, TYPES 1N3644, 1N3645, 1N3646, AND 1N3647, JAN AND JANTX Inactive for new design after 7 June 1999. However,

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DIGITRON SEMICONDUCTORS 1N3643-1N3647 1N4254-1N4257 1N5181-1N5184 HIGH VOLTAGE RECTIFIERS MAXIMUM RATINGS Parameter Value Operating and Storage Temperature: -65 to +175°C Thermal resistance 38° junction to lead at 3/8” lead length from body Average rectified forward current IO

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

ln3644

Abstract: 1N3643 1N3644 1N3645 1N3647 1N4254 1N4257 N3644
Contextual Info: . v.X ik L jS / \ « 8 iM V MwrolsemiCorp. 1 N 3 643 th ru 1 N 3 647 1N4254 thru 1N4257 1 m si 81 th ru 1 n s i 8 4 ' The dio d e experts SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 714 9 7 9 -8 2 2 0 FEATU RES • M IC R O M IN IA TU R E PAC KAGE

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

MIL-S-19500

Abstract: 59-61 m19500483 JTX 1N5811 MIL-S-19500/359
Contextual Info: Standard MIL-Specification Approvals European Military Approvals The following discrete rectifiers documented in this catalog are fully approved in accordance with MIL-S-19500. The following devices are qualified in Europe to DEF STAN 59-61 part 80 or part 90.

Contextual Info: 1N3643 thru 1N3647 1N5181 thru 1N5184 Micmemi Corp. $ The Ôioûe experts SANTA ANA, CA SCOTTSDALE, AZ For more information call: 714 979-8220 FEATURES • M IC R O M IN IA T U R E P A C K A G E • V O ID L E S S H E R M E T IC A L L Y S E A L E D G L A S S P A C K A G E

Contextual Info: 1N3643 - 1N3647, 1N4254 - 1N4257 and 1N5181 - 1N5184 Available on commercial versions Voidless Hermetically Sealed High Voltage Rectifier Qualified Levels: JAN and JANTX 1N3644 – 1N3647 only Qualified per MIL-PRF-19500/279 DESCRIPTION These “standard recovery” high voltage rectifier diode series are military qualified to MIL-PRF19500/279 for the 1N3644 through 1N3647 part numbers. They are ideal for high voltage,

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: AXIAL LEADED DISCRETE RECTIFIERS cont. ABSOLUTE MAXIMUM RATINGS (@25' C UNLESS OTHERWISE SPECIFIED) TEL: 805-498-2111 D evice Type R everse V oltage V rwm V hhw F o rw ard C urrent @ 55 C R everse R ec­ ove ry Tim e li (AV) T,r R e p e t­ 1 C ycle itive

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N5182 equivalent

Abstract: military part marking symbols jan diode 1n4254
Contextual Info: 1N3643 - 1N3647, 1N4254 - 1N4257 and 1N5181 - 1N5184 Available on commercial versions Voidless Hermetically Sealed High Voltage Rectifier Qualified Levels: JAN and JANTX 1N3644 – 1N3647 only Qualified per MIL-PRF-19500/279 DESCRIPTION These “standard recovery” high voltage rectifier diode series are military qualified to MIL-PRF19500/279 for the 1N3644 through 1N3647 part numbers. They are ideal for high voltage,