2SB100 Search Results

Contextual Info: Product specification 2SB1000 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5 V IC -1 A Collector current

2SB1002

Abstract: 2SD1368 2SD789 Mark CA DSA003638
Contextual Info: 2SD1368 Silicon NPN Epitaxial ADE-208-1148 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C)

2SB1001

Abstract: 2SD1367 DSA003638
Contextual Info: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)

2SD1558

Contextual Info: 2SD1558, 2SD1599 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1007 Outline T O -2 2 0 A B 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1558 2SD1599 Unit Collector to base voltage

7s02

Abstract: 2SB1007 2SD1378
Contextual Info: b ' y ' s v X Ç / T ransistors 2SB1007 2SB1007 pnp '> y = i> h 'ÎS:Ji JS ^3i^lH ffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • fi-M rH iH g/D im ension s Unit : mm) 1) V c e o = — 8 0 V ( 7 ) r a f f iH ? S 5 o 2) 2 S D 1 3 7 8 ¿ □ > ' / lJ T 'S > -5 o

Contextual Info: 2SB1001 Silicon PNP Epitaxial HITACHI Application • Low frequency power am plifier • Complementary pair with 2 S D 1367 Outline UPAK 2. Collector 3. Emitter 4. Collector Flange 222 2SB1001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2sb1000

Contextual Info: HITACHI 2SB1000 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1366 _ iíiiü \ ftsr-ix i r, t >i r . !r r ^ " 1. Bdw 2. CoHcUor 3. Hmiucr 4. CoÜcciu» Range {Diincii^suiik in mai) (UPAK) MAXIMUM CO LLECTO R DISSIPATIO N

PLZZ0004CA-A

Abstract: 2SB1002 2SB1002CJTL-E 2SD1368 2SB1002CJ
Contextual Info: 2SB1002 Silicon PNP Epitaxial REJ03G0660-0200 Previous ADE-208-1035 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

2sb1008

Contextual Info: h "7 > '¿ 7s $ /T ra n s is to rs O C D 4 A A • W 2SB1008 A X t ° $ * y T J l ' 7 ° l ' - j i f } P N P y lJ = i > # - y > b > h 7 > y 7 . $ w O Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • ttft • \}";£l2l/D im en sio ns U nit : mm

2SB1001

Abstract: 2SD1367 2SD1367BCTR-E UPAK Marking BC
Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

2SB1005

Abstract: TO-220C
Contextual Info: JMnic Product Specification 2SB1005 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to

2SB1005

Contextual Info: Inchange Semiconductor Product Specification 2SB1005 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to

2SB1000

Abstract: SMD BR 08 smd marking AJ POWER ic marking AJ ICP Amplifier IC
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SB1000 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5

2SB1008

Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$

2SB1008

Abstract: 333T 7333-1
Contextual Info: ROHM CO LTD 40E m d v a a a 'm d q o s s is / T ra n s is to rs i ebrhm 2SB1008 - 7 - 3 3 -3 1 PNP h> 2 Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • W f M Ü H / ' D i n i e n s i o n s U n it : m m

2SB1002

Abstract: 2SD1368 2SD1368-A
Contextual Info: HITACHI 2SB1002 SILICON PN P EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SD1368 J.SiO.t — 1. Haw 1. Collector 3. ¡.um ici 4. Collector Flange I (Dimensions in mai) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

Hitachi DSA0076

Abstract: 2SB1002 2SD1368
Contextual Info: 2SB1002 Silicon PNP Epitaxial ADE-208-1035 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1558,2SD1599 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1007 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1558 2SD1599 Unit Collector to base voltage ^G B O 60 80

2SB1002

Abstract: 2SD1368 DSA003720
Contextual Info: 2SB1002 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SB1002 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1000A

Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQ UEN C Y PO W ER AM PLIFIER Complementary pair with 2SD1366A -f \-< 1 Ba*c 2 O H e c to r -I” 3. Emitter 4 C oüeckw Fìar.gei > >Hr»« mmm} (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE I A B SO LU T E MAXIMUM RATINGS iTs,=25’C)

2S0187

Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®

2SD1380

Abstract: TRANSISTOR BV 32
Contextual Info: Is 7 > V £ /Transistors 2SD1380 7 ; I/ 7° b - * Jg NPN y V □ > b 7 > V 7. $ X kf * * y 2SD 1380 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • ^ J fir H ilH /D im e n s io n s Unit : mm 1) VcEO= 32V, lc= 2A, Pc= 10W<D?A mt-iT’T&Zc 2) 2SB10091 =l > -f'J ? A 3 0

Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

2SB1005

Contextual Info: SavantIC Semiconductor Product Specification 2SB1005 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain ·DARLINGTON APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to