2SD1366A Search Results

Contextual Info: Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃

2SD1366A

Contextual Info: HITACHI 2SD1366A S il ic o n n p n e p it a x ia l LO W F R E Q U E N C Y P O W E R A M P L IF IE R Complementar/ pair with 2S31DD0A • 4.513.1 I a Wax 1.5 ± 0.1 .0.44 Max 4 L tf ö s L -■H 5 -—! IO {' X 5 T —■ t¿F~ I 0.53 Max 0.48 Max IM Cvj. I. B s ic

hitachi ad

Contextual Info: 2SD1366A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline UPAK 1 2. Collector 3. Emitter 4. Collector Flange 915 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V cB O 30 V

Hitachi DSA002756

Contextual Info: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366A Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO

Contextual Info: IC Transistors SMD Type Silicon NPN Epitaxial 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector

2SB1000A

Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQ UEN C Y PO W ER AM PLIFIER Complementary pair with 2SD1366A -f \-< 1 Ba*c 2 O H e c to r -I” 3. Emitter 4 C oüeckw Fìar.gei > >Hr»« mmm} (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE I A B SO LU T E MAXIMUM RATINGS iTs,=25’C)

2SD1366

Abstract: 2SD1366A Hitachi DSA00395
Contextual Info: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V

2SB1000A

Abstract: 2SB562 2SD1366A LOPA
Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQUENCY PO W ER AM PLIFIER Complemenlary pair with 2SD1366A 3. Rase 2. Collector J . limitier 4. Collector Flange -U-L-o«" (Oimcnsiofli in mm) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE !ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2SD1366

Abstract: 2SD1366A DSA003638
Contextual Info: 2SD1366A Silicon NPN Epitaxial ADE-208-1146 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SD1366

Abstract: 2SD1366A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

2SD977

Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2S0187

Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®

2SB1039

Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)

Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Contextual Info: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SD1407

Abstract: 2SB977 2SB1017 2SD1347 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974
Contextual Info: - 70 - n Ta=25V.*EPteTc=25V m £ *± £ VcBO Vceo (V) (V) Ic(DC) <A> Pc Pc* (HO m iCBO (max) (ub) VcB (V) m (min) w & (max) 14 V'CE (V) (Ta=25°C) ic/I E (A) [*EP[ätypH3 (max) (V) (V) Ic (A) Ib Ca ) 2SB966 BIS LF PA -120 -120 -8 80 -50 -120 60 320 -5 -1

2SC5146

Abstract: TRANSISTOR 2SA 2SK type Transistor 2SD 2SC2545, 2SC2546 2SC2547 2sb darlington 2sb647 2sd667 2sc458lg 2SC2546 2sb74
Contextual Info: Product Profiles Bipolar PNP Transistor 2SA type Electrical characteristics Test Maximum ratings ^CEO Package SPAK TO-92 Type No, (V) 'c Pc (mA) (W) ^FE Test condition V_ condition vΠ(V) <c (mA) (sat) Cob 'C (mA) (mA) (pF) *T (MHz) Others 200 - (V) 2SA1337

2SD1366A

Abstract: 2SD1366
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
Contextual Info: INDEX GENERAL General Information Sales Locations Semiconductor Packages FLAT PANEL CONTROLLER / DRIVER Liquid Crystal Display Controller MICROCONTROLLER Microcontroller General Micro. Shortform Micro. Overview Micro. Hardware Manual Micro. Program. Manual

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w