2SB1001 Search Results

2SB1001

Abstract: 2SD1367 DSA003638
Contextual Info: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SB1001 Silicon PNP Epitaxial HITACHI Application • Low frequency power am plifier • Complementary pair with 2 S D 1367 Outline UPAK 2. Collector 3. Emitter 4. Collector Flange 222 2SB1001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1001

Abstract: 2SD1367 2SD1367BCTR-E UPAK Marking BC
Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

2S0187

Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®

Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

smd marking BJ

Abstract: marking BH 2SB1001
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SB1001 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -20 V Collector to emitter voltage VCEO -16 V Emitter to base voltage VEBO

Contextual Info: Product specification 2SB1001 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -20 V Collector to emitter voltage VCEO -16 V Emitter to base voltage VEBO -6 V IC -2 A peak collector current

2SB1001BJTR-E

Abstract: 2SB1001 2SD1367
Contextual Info: 2SB1001 Silicon PNP Epitaxial REJ03G0659-0200 Previous ADE-208-1034 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

nl125

Contextual Info: HITACHI 2SB1001 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1367 h i- Bi»e 2. Cóíícvsuí3 Knúucr 4 Collcciur »1-Hw DüiicíUivuii us <oin> (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS {T#=*2S*C)

Hitachi DSA0076

Abstract: 2SB1001 2SD1367
Contextual Info: 2SB1001 Silicon PNP Epitaxial ADE-208-1034 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1001 Absolute Maximum Ratings (Ta = 25°C)

2SB1013

Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041
Contextual Info: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367

Hitachi DSA002754

Contextual Info: 2SB1001 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline 2SB1001 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –20 V Collector to emitter voltage

2SB1001

Abstract: 2SD1367
Contextual Info: HITACHI 2SB1001 SILIC O N P N P EPITA XIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SD1367 t.Ämax. *7 Ö ' 4 •' ] ■■ — ■■ Ö - < 1. Blue H tí É *n tr> 2. Collector ,-— 4— 3. Emitter 'U4 1uJuli ■4. Collector Range Jo .S 3 L

2SB1001

Abstract: 2SD1367 Hitachi DSA00397
Contextual Info: 2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1367 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Hitachi DSA002756

Contextual Info: 2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline 2SD1367 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage

2SB1001

Abstract: 2SD1367 DSA003780
Contextual Info: 2SB1001 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SB1001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1001

Abstract: 2SD1367
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SB1001

Abstract: 2SD1367 2SD1367BCTR-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SB1001

Abstract: 2SD1367
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer