2SB1000A
Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQ UEN C Y PO W ER AM PLIFIER Complementary pair with 2SD1366A -f \-< 1 Ba*c 2 O H e c to r -I” 3. Emitter 4 C oüeckw Fìar.gei > >Hr»« mmm} (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE I A B SO LU T E MAXIMUM RATINGS iTs,=25’C)
|
OCR Scan
|
2sb1000a-----silicon2sd1366a2sb1000a2sb562 |
PDF
|
2S0187
Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®
|
OCR Scan
|
2sb10002sb1000a2sb10012sb1002+152sb10262sb10272sb10282sb15182sb15192sb15202s0187transistor 2sc4602sb637ok012sd7632sc1472transistor 2sc454transistor 2sb10282sa1666
|
PDF
|
2SB1000A
Abstract: 2SB562 2SD1366A LOPA
Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQUENCY PO W ER AM PLIFIER Complemenlary pair with 2SD1366A 3. Rase 2. Collector J . limitier 4. Collector Flange -U-L-o«" (Oimcnsiofli in mm) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE !ABSO LU T E MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
2sb1000a--2sd1366a2sb1000a2sb562+1lopa
|
PDF
|
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
|
Original
|
2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
|
PDF
|
2SD1388
Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25
|
Original
|
2sd13012sd13022sd13032sd1304+152sd13052sd13062sd13072sd13082sd13092sd13102sd13882sd13872sd13702sd13692sd13312sd13602sd13462sd13332sd1371
|
PDF
|
b 817
Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818
|
OCR Scan
|
2sa17032sb909m2sa17052sb1044m+132sb12142sa11942sb12722sb765002sb1119b 817toshiba 2sb755b8172sb7552sb8972sb9272sa12132sb789a
|
PDF
|
RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
|
OCR Scan
|
2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
|
PDF
|
2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
|
Original
|
2sb9012sb9022sb9032sb904+132sb9052sb9062sb9072sb9082sb9092sb9102sb9712sb9782sb9112sb9172sb9182sb9832sd1347
|
PDF
|
2SB1039
Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)
|
OCR Scan
|
2sd13042sd13052sd13062sd1308+92sd13092sd13102sd13112sd1326t0-220f2sd13272sb1039mp402sd1347
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
|
PDF
|
sa1306
Abstract: 2SB793 2sb1370 2SA1306 2SB1186B 2SB1085B 2SA1770 2SA1175 2SA1306A 2SB1212
Contextual Info: - m « Type No. 2SB m 8 6 > 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2SB tt □—A □- A 1186A 118 7 / □— A □— A 1188 / □—A 1189 y 119 0 fé T 113 0A *2 T 1191
|
OCR Scan
|
2sa1606sa1306sa16062sa1306+132sb940a2sb10152sb9412sb13702sbu232sa12032sb7932sb1186b2sb1085b2sa17702sa11752sa1306a2sb1212
|
PDF
|
2SD1407
Abstract: 2SB977 2SB1017 2SD1347 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974
Contextual Info: - 70 - n Ta=25V.*EPteTc=25V m £ *± £ VcBO Vceo (V) (V) Ic(DC) <A> Pc Pc* (HO m iCBO (max) (ub) VcB (V) m (min) w & (max) 14 V'CE (V) (Ta=25°C) ic/I E (A) [*EP[ätypH3 (max) (V) (V) Ic (A) Ib Ca ) 2SB966 BIS LF PA -120 -120 -8 80 -50 -120 60 320 -5 -1
|
OCR Scan
|
2sb9662sb9672sb9682sb970+102sb9732sb9742sb10112sd1376ko-1262sb1012k2sd14072sb9772sb10172sd1347
|
PDF
|
2SB1099
Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w
|
OCR Scan
|
2sb9662sb9672sb9682sb970+102sb9732sb9742sb1099mp-452sb11002sd16012sd15892sd14072sb10892sd1347
|
PDF
|
BF479
Abstract: 2N5456 2SA1409-L KT361 2SB793 bsw21 LOW-POWER SILICON PNP 2SB1117L 2sb1117k BC357
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2SA719 2SA730 BC357 BC357 BC357 BSW73 KT3107G BC178 BC178A 2SA890 ~~~g~g 15 20 KT31 070 BC178B MPS6519 2SC2724 2SB766 2SB766A 2SB793 2SA1409L 2~A141UL 25 30 2SA1411 2SA1411 2SA1409K 2SA1410K KT361 A
|
Original
|
2sa7192sa730bc357bsw73+13kt3107gbc178bc178a2sa890bf4792n54562sa1409-lkt3612sb793bsw21low-power silicon pnp2sb1117l2sb1117k
|
PDF
|
|
|