2SB970 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)

2SB0970

Abstract: 2SB970
Contextual Info: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 Low collector to emitter saturation voltage VCE(sat).

Contextual Info: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 6 2 1 0.65±0.15 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • ARN-5 + 2SB0970 (2SB970)

2SB1545

Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
Contextual Info: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970

2SB0970

Abstract: 2SB970
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) Emitter-base voltage (Collector open)

2SB0970

Abstract: 2SB970 2SD1328 XN04604 XN4604
Contextual Info: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD1328 + 2SB0970(2SB970) ■ Absolute Maximum Ratings

2SB970

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE sat .

marking ML5

Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
Contextual Info: PANASONIC INDL/ELEK-CSEfll} 7EC V | ^ 3 5 0 5 4 □GD1GD4 7 | ~ h ^ ^ T / 5 ? _ *_ 2SB970 2SB970 '> ij zj > PNP öl tf £ '> t Ji/Z?I s - j - f î t / S i PNP Epitaxial Planar fSISEEiÜ^jittififfl/AF Output Amplifier

2SB970

Contextual Info: Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 2.8 –0.3 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● 0.65±0.15 Low collector to emitter saturation voltage VCE sat .

Transistor hFE CLASSIFICATION Marking CE

Abstract: hFE is transistor to-220 Vbe 8 V 2SB0970 2SB970
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Symbol Rating

Contextual Info: Product specification 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE sat . 1 0.55 insertion through the tape packing and the magazine packing.

2SB0970

Abstract: 2SB970
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05

2SB0970

Abstract: 2SB970 XN04404 XN4404
Contextual Info: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0970(2SB970) x 2 elements 0 to 0.1

2SB0970

Abstract: 2SB970
Contextual Info: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w

2SB0970

Abstract: 2SB970
Contextual Info: Transistors 2SB0970 2SB970 Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) 1.9±0.1 (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1385

Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Contextual Info: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451

XN4608

Abstract: 2SB0970 2SB970 2SD0601A 2SD601A XN04608
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65)

xn07

Abstract: 2SB0970 2SB970 XN07651 XN7651
Contextual Info: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d For motor drive 5 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05

2SB0970

Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification (Tr1) For amplification of low-frequency output (Tr2)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for