LOPA Search Results

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1532-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

IGBT abb

Abstract: abb 5sns 0100w120000 IGBT abb datasheets 5SNS 0100W120000 ABB IGBT
Contextual Info: VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS 0100W120000 • • • • • Doc. No. 5SYA1511-00 May. 01 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package

Contextual Info: Data Sheet LoPACTM Family PFC Mini, PFC Micro, PFC MicroS Power Factor Corrected, AC-DC Switchers Family Features • • • • • • • • • • • • Near unity power factor EN61000-3-2 harmonic current compliance Low profile package Output power to 1,500 W

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 Doc. No. 5SYA1532-02 June 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver

abb ptc 100 temperature sensor

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V172100 Doc. No. 5SYA1536-02 June 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver

ABB IGBT inverter

Abstract: abb inverter 5SNS0300U120100
Contextual Info: L oP a k VCE SAT (V) Low profile, low inductance three-phase bridges ABB’s LoPak range of three-phase IGBT modules are designed with reliability and high life expectancy in mind. LoPak uses DCB substrates (Direct Copper Bonding) for high IOL (IntermitOn-State Voltage against collector current

0150V1

Abstract: 5SYA2017
Contextual Info: VCE IC = = 1200 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V120100 Doc. No. 5SYA1524-01 Dez. 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver

AX400

Abstract: LOPA AX-400 AX437 OP27 MAX422 MAX423 MAX9687 ICL7614 AX455
Contextual Info: Op Amps Part Number MAX400 Vos mV max 10 to 15tiV TCVos friV/'C max) 0.3 (nA max) 2 Unity GBW (MHz) 0.4 MAX402 MAX403 MAX406 2 2 0.5 to 2.0 25 33 10 5 25 lOpA ±5 2 / 6(AvS5) 10/30(Avi5) ±5 0.008 to 0.040 +25 to +10 75hA 375ji A 1.2(iA MAX407 MAX408/428/448

205204-4

Abstract: EN61000-4-4 EN61000-4-5 VI-J00 MegaPAC
Contextual Info: Data Sheet LoPACTM Family PFC Mini, PFC Micro, PFC MicroS Power Factor Corrected, AC-DC Switchers Family Features • • • • • • • • • • • • • Near unity power factor EN61000-3-2 harmonic current compliance Low profile package Output power to 1,500 W

IGBT abb

Contextual Info: VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS0100W120000 PRELIMINARY • • • • • Doc. No. 5 SYA-1511-00 July 00 Low-loss, rugged IGBT chipset EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

5SNS 0100W120000

Abstract: abb 5sns 0100w120000
Contextual Info: VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS 0100W120000 PRELIMINARY • • • • • Doc. No. 5SYA1511-00 Aug. 00 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak 5 5SNS0300U120000 TENTATIVE • • • • • Doc. No. 5 SYA-1507-00 June 99 Low-loss, rugged IGBT chip-set Low EMI generating diode Low profile compact package Drop-on bus bars and snap-on PCB assembly Integrated NTC case

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V172100 MARKETING INFORMATION • • • • • • Doc. No. 5SYA1536-00 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS0300U121100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1529-01 July 00 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact package

phono preamplifier circuit diagram

Abstract: ps8c riaa preamplifier circuit diagram LF156A OPA606LM NATIONAL riaa RIAA preamplifier
Contextual Info: B U R R -B R O W N g O P A 6 O 6 1 A V A ILA B LE IN DIE F O R M Wide-Bandwidth O P E R A T IO N A L AM PLIFIER FEATURES APPLICATIONS • WIDE BANDWIDTH. 13MHz typ • OPTOELECTRONICS • HIGH SLEW RATE. 3SV/^sec typ • DATA ACQUISITION • LOW BIAS CURRENT. lOpA max at TA = +25° C

Contextual Info: VCE IC = = 1200 V 75 A IGBT Module LoPak3 SPT 5SNS 0075W120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1520-00 Aug. 00 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

MC6805

Abstract: Ramtron FRAM Serial Memory
Contextual Info: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range

MIL-STD-810G

Abstract: VI-J00 MOLEX micro pin
Contextual Info: Data Sheet LoPAC COTS Family Family Features • Near unity power factor • EN61000-3-2 harmonic current compliance • Low profile package • Output power to 1,500 W • Up to 6 user specifiable outputs • Universal AC input • Power density up to 11 W/in3

5SYA1510

Abstract: IGBT abb IGBT abb datasheets
Contextual Info: VCE IC = = 1200 V 75 A IGBT Module LoPak3 NPT 5SNS 0075W120000 • • • • • Doc. No. 5SYA1510-00 May. 01 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package

ABB IGBT

Abstract: TF PTC 0300U120 5SNS 0300U120100
Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1528-01 Jan. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: VCE IC = = 1200 V 200 A IGBT Module LoPak4 SPT 5SNS 0200V120100 PRELIMINARY • • • • • Doc. No. 5SYA1526-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

Contextual Info: VCE IC = = 1200 V 75 A IGBT Module LoPak 3 5SNS0075W120000 TENTATIVE • • • • • Doc. No. 5 SYA-1510-00 June 99 Low-loss, rugged IGBT chip-set Low EMI generating diode Low profile compact package Drop-on PCB assembly Industry standard package Maximum Rated Values

Contextual Info: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U172100 MARKETING INFORMATION • • • • • • Doc. No. 5SYA1537-00 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless