2SD973 Search Results

Contextual Info: Transistor 2SD0973, 2SD0973A 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 2.5±0.1 M Di ain sc te on na tin nc ue e/ d 2SD0973 base voltage 2SD0973A Collector to 2SD0973 30 VCBO Emitter to base voltage

2SB793

Abstract: 2SB793 R 2sa793 2SD973A 2SB793A 2SD973 2SB793 Q
Contextual Info: 2SB793, 2SB793A 2SB793, 2SB793A '> ij =i V PNP i l f ^ + '> T'JUTV—^ Jfé/S i PNP Epitaxial Planar 2SD973, 2SD973A £ • 4$ U nit ‘ mm Pow er Am plifier jt U / Com plem entary Pair with 2SD973, 2SD973A 6.9±0.1 2.5 + 0.1 /F e a tu r e s • VcE sat

2SD0973

Abstract: 2SD0973A 2SD973 2SD973A
Contextual Info: Transistor 2SD0973, 2SD0973A 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 Symbol Collector to 2SD0973 base voltage 2SD0973A Collector to 2SD0973 * Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current

2SD0973A

Abstract: 2SD973A
Contextual Info: Transistors 2SD0973A 2SD973A Silicon NPN epitaxial planar type Unit: mm For low-frequency driver amplification (1.0) 4.5±0.1 4.1±0.2 2.0±0.2 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: Transistors 2SD0973A 2SD973A Silicon NPN epitaxial planar type Unit: mm For low-frequency driver amplification (1.0) 4.5±0.1 4.1±0.2 2.0±0.2 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD973

Abstract: 2SD973 R 2SD973A
Contextual Info: Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD973 base voltage 2SD973A Collector to 2SD973 * Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current

2SD973A

Abstract: 2SD0973A
Contextual Info: Transistors 2SD0973A 2SD973A Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation *

2SD0973A

Abstract: 2SD973A
Contextual Info: Transistors 2SD0973A 2SD973A Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) R 0.9 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)

Contextual Info: Transistor 2SD0973, 2SD0973A 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 Symbol Collector to 2SD0973 base voltage 2SD0973A Collector to 2SD0973 30 Emitter to base voltage

2SD973A

Abstract: 2SD0973 2SD0973A 2SD973
Contextual Info: Transistor 2SD0973, 2SD0973A 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 6.9±0.1 2SD0973 base voltage 2SD0973A Collector to 2SD0973 VCBO VCEO emitter voltage 2SD0973A

2SD0973A

Abstract: 2SD973A
Contextual Info: Transistors 2SD0973A 2SD973A Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SD921

Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H

NEC 2701

Abstract: NEC 2703 2701 NEC NEC 2705 2SC2724 2sc2257 2sc2786 2674 k 2679 2SC2911
Contextual Info: 144 - a s T ype No. € Manuf. 2SC 2663 X 2SC 2665 if y 'r y H $ SANYO 2 2SC 2668 |C 2SC 2669 S 2 2SC 267Û K 2 2SC 2671 * fé T 2SC 2672 a M 2SC 2673 / □ —A 2SC 2674 2SC 2675 2SC2724 2SC2926S 2SC2787 2SC2724 2SC2058S 2SC2724 2SC2058S 2SC3776 2SC3128 2SC 267KH

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

2sD1555

Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404
Contextual Info: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B

2SD945

Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350